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1. 发明授权

US09701581B2 Method and apparatus for processing substrates using a laser 有权
公开(公告)号：US09701581B2
公开(公告)日：2017-07-11
申请号：US13375499
申请日：2009-06-04
申请人： Jarno Kangastupa , Tiina Amberla
发明人： Jarno Kangastupa , Tiina Amberla
IPC分类号： B23K26/00 , C03C23/00 , B28D5/00 , C03B33/02 , C03B33/08 , B23K26/244 , B23K26/0622 , B23K26/32 , B23K101/40 , B23K103/00
CPC分类号： C03C23/0025 , B23K26/0624 , B23K26/244 , B23K26/32 , B23K2101/40 , B23K2103/50 , B28D5/0011 , C03B33/0222 , C03B33/082 , Y02P40/57
摘要： The invention relates to a method and apparatus for processing substrates, such as glass and semiconductor wafers. The method comprises directing to the substrate from a laser source a plurality of sequential focused laser pulses having a predetermined duration, pulsing frequency and focal spot diameter, the pulses being capable of locally melting the substrate, and moving the laser source and the substrate with respect to each other at a predetermined moving velocity so that a structurally modified zone is formed to the substrate. According to the invention, the pulse duration is in the range of 20-100 ps, pulsing frequency at least 1 MHz and moving velocity adjusted such that the distance between successive pulses is less than ⅕ of the diameter of the focal spot. The invention can be utilized, for example, for efficient dicing, scribing and welding of materials which are normally transparent.

2. 发明授权

US09171822B2 Method of sealing and contacting substrates using laser light and electronics module 有权
标题翻译：使用激光和电子模块密封和接触基板的方法
公开(公告)号：US09171822B2
公开(公告)日：2015-10-27
申请号：US13643306
申请日：2011-05-17
申请人： Jarno Kangastupa , Tiina Amberla , Kazuo Yamada
发明人： Jarno Kangastupa , Tiina Amberla , Kazuo Yamada
IPC分类号： B23K26/24 , H01L23/00 , B23K26/00 , G02F1/1339 , G02F1/1345
CPC分类号： H01L24/91 , B23K26/0006 , B23K26/244 , B23K26/50 , B23K2103/56 , G02F1/1339 , G02F1/1345 , H01L23/562 , H01L24/80 , H01L24/83 , H01L2224/056 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29171 , H01L2224/2918 , H01L2224/80001 , H01L2224/80224 , H01L2224/80359 , H01L2224/80488 , H01L2224/83193 , H01L2224/83224 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83471 , H01L2224/8348 , H01L2224/9211 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/01059 , H01L2924/01066 , H01L2924/01068 , H01L2924/0107 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01105 , H01L2924/10253 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/15788 , H01L2924/00014 , H01L2924/00011 , H01L2924/00012 , H01L2224/83 , H01L2924/01014 , H01L2924/3512 , H01L2924/00
摘要： The invention concerns a method of fusing and electrically contacting a first insulating substrate (28A) having at least one first conductive layer (29A) thereon with at least one second insulating substrate (28B) having at least one second conductive layer (29B) thereon, the method comprising: stacking the first and second substrates (28A, 28B) such that an interface zone is formed between them, the interface zone comprising an electrical contacting zone where at least one first conductive layers (29A) faces and is at least partially aligned with at least one second conductive layer (29B), and a substrate fusing zone where the insulating substrates (28A, 28B) directly face each other; focusing to the interface zone of the substrates (28A, 28B) through one of the substrates (28A, 28B) a plurality of sequential focused laser pulses from a laser source, the pulse duration, pulse frequency and pulse power of the laser light being chosen to provide local melting the substrate (28A, 28B) materials and the conductive layers (29A, 29B); and moving the laser source and the substrate with respect to each other at a predetermined velocity and path so that a structurally modified zone is formed to the interface zone, the structurally modified zone overlapping with said electrical contacting zone and said substrate fusing zone. The invention provides a convenient way of manufacturing well-sealed joints and electrical contacts for multifunction electronic devices, for example.
摘要翻译：本发明涉及一种将具有至少一个第一导电层（29A）的第一绝缘衬底（28A）熔合并电接触至少一个在其上具有至少一个第二导电层（29B）的第二绝缘衬底（28B）的方法，所述方法包括：堆叠所述第一和第二基板（28A，28B），使得在它们之间形成界面区，所述界面区包括电接触区，其中至少一个第一导电层（29A）面对且至少部分对准具有至少一个第二导电层（29B），以及绝缘基板（28A，28B）直接面对的基板熔合区域; 通过基板（28A，28B）中的一个基板（28A，28B）的界面区域聚焦来自激光源的多个连续聚焦的激光脉冲，选择激光的脉冲持续时间，脉冲频率和脉冲功率以提供局部熔化基板（28A，28B）材料和导电层（29A，29B）; 并且以预定的速度和路径相对于彼此移动激光源和基板，使得结构上改性的区域形成到界面区域，所述结构改性区域与所述电接触区域和所述基板熔合区域重叠。本发明提供了例如制造用于多功能电子设备的良好密封接头和电接点的方便方法。

3. 发明申请

US20130070428A1 METHOD OF SEALING AND CONTACTING SUBSTRATES USING LASER LIGHT AND ELECTRONICS MODULE 有权
标题翻译：使用激光和电子模块密封和接触基板的方法
公开(公告)号：US20130070428A1
公开(公告)日：2013-03-21
申请号：US13643306
申请日：2011-05-17
申请人： Jarno Kangastupa , Tiina Amberla , Kazuo Yamada
发明人： Jarno Kangastupa , Tiina Amberla , Kazuo Yamada
IPC分类号： H05K7/06 , B23K26/24 , H05K13/04
CPC分类号： H01L24/91 , B23K26/0006 , B23K26/244 , B23K26/50 , B23K2103/56 , G02F1/1339 , G02F1/1345 , H01L23/562 , H01L24/80 , H01L24/83 , H01L2224/056 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29171 , H01L2224/2918 , H01L2224/80001 , H01L2224/80224 , H01L2224/80359 , H01L2224/80488 , H01L2224/83193 , H01L2224/83224 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83471 , H01L2224/8348 , H01L2224/9211 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/01059 , H01L2924/01066 , H01L2924/01068 , H01L2924/0107 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01105 , H01L2924/10253 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/15788 , H01L2924/00014 , H01L2924/00011 , H01L2924/00012 , H01L2224/83 , H01L2924/01014 , H01L2924/3512 , H01L2924/00
摘要： The invention concerns a method of fusing and electrically contacting a first insulating substrate (28A) having at least one first conductive layer (29A) thereon with at least one second insulating substrate (28B) having at least one second conductive layer (29B) thereon, the method comprising: stacking the first and second substrates (28A, 28B) such that an interface zone is formed between them, the interface zone comprising an electrical contacting zone where at least one first conductive layers (29A) faces and is at least partially aligned with at least one second conductive layer (29B), and a substrate fusing zone where the insulating substrates (28A, 28B) directly face each other; focusing to the interface zone of the substrates (28A, 28B) through one of the substrates (28A, 28B) a plurality of sequential focused laser pulses from a laser source, the pulse duration, pulse frequency and pulse power of the laser light being chosen to provide local melting the substrate (28A, 28B) materials and the conductive layers (29A, 29B); and moving the laser source and the substrate with respect to each other at a predetermined velocity and path so that a structurally modified zone is formed to the interface zone, the structurally modified zone overlapping with said electrical contacting zone and said substrate fusing zone. The invention provides a convenient way of manufacturing well-sealed joints and electrical contacts for multifunction electronic devices, for example.
摘要翻译：本发明涉及一种将具有至少一个第一导电层（29A）的第一绝缘衬底（28A）熔合并电接触至少一个在其上具有至少一个第二导电层（29B）的第二绝缘衬底（28B）的方法，所述方法包括：堆叠所述第一和第二基板（28A，28B），使得在它们之间形成界面区，所述界面区包括电接触区，其中至少一个第一导电层（29A）面对且至少部分对准具有至少一个第二导电层（29B），以及绝缘基板（28A，28B）直接面对的基板熔合区域; 通过基板（28A，28B）中的一个基板（28A，28B）的界面区域聚焦来自激光源的多个连续聚焦的激光脉冲，选择激光的脉冲持续时间，脉冲频率和脉冲功率以提供局部熔化基板（28A，28B）材料和导电层（29A，29B）; 并且以预定的速度和路径相对于彼此移动激光源和基板，使得结构上改性的区域形成到界面区域，所述结构改性区域与所述电接触区域和所述基板熔合区域重叠。本发明提供了例如制造用于多功能电子设备的良好密封接头和电接点的方便方法。

4. 发明申请

US20120067858A1 Method and apparatus for processing substrates using a laser 有权
标题翻译：使用激光加工基板的方法和装置
公开(公告)号：US20120067858A1
公开(公告)日：2012-03-22
申请号：US13375499
申请日：2009-06-04
申请人： Jarno Kangastupa , Tiina Amberla
发明人： Jarno Kangastupa , Tiina Amberla
IPC分类号： B23K26/00
CPC分类号： C03C23/0025 , B23K26/0624 , B23K26/244 , B23K26/32 , B23K2101/40 , B23K2103/50 , B28D5/0011 , C03B33/0222 , C03B33/082 , Y02P40/57
摘要： The invention relates to a method and apparatus for processing substrates, such as glass and semiconductor wafers. The method comprises directing to the substrate from a laser source a plurality of sequential focused laser pulses having a predetermined duration, pulsing frequency and focal spot diameter, the pulses being capable of locally melting the substrate, and moving the laser source and the substrate with respect to each other at a predetermined moving velocity so that a structurally modified zone is formed to the substrate. According to the invention, the pulse duration is in the range of 20-100 ps, pulsing frequency at least 1 MHz and moving velocity adjusted such that the distance between successive pulses is less than ⅕ of the diameter of the focal spot. The invention can be utilized, for example, for efficient dicing, scribing and welding of materials which are normally transparent.
摘要翻译：本发明涉及用于处理诸如玻璃和半导体晶片的衬底的方法和装置。该方法包括从激光源引导具有预定持续时间，脉冲频率和焦斑直径的多个顺序聚焦的激光脉冲，脉冲能够局部熔化基板，以及相对于基板移动激光源和基板以预定的移动速度彼此相连，从而在基底上形成结构上改性的区域。根据本发明，脉冲持续时间在20-100ps的范围内，脉冲频率至少为1MHz，移动速度被调整为使得连续脉冲之间的距离小于焦点直径的。。本发明可以用于例如通常是透明的材料的有效切割，划线和焊接。

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