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1. 发明授权

US4301463A Demultiplexing photodetector 失效
标题翻译：解复用光电探测器
公开(公告)号：US4301463A
公开(公告)日：1981-11-17
申请号：US128305
申请日：1980-03-07
申请人： Charles A. Burrus, Jr. , Joe C. Campbell , Andrew G. Dentai , Tien P. Lee
发明人： Charles A. Burrus, Jr. , Joe C. Campbell , Andrew G. Dentai , Tien P. Lee
IPC分类号： H01L31/11 , H04B10/158 , H01L27/14
CPC分类号： H01L31/11
摘要： A three terminal, totally integrated demultiplexing photodiode is disclosed wherein information present simultaneously at two wavelengths can be developed into two separate currents available at the three terminals. Two quaternary layers (203 and 205) of indium, gallium, arsenide phosphide having unequal bandgaps and each having a pn junction are separated by a buffer layer (204) of n type indium phosphide. Operation at longer wavelengths is achieved by causing the bottom quaternary layer to have the higher bandgap energy thereby permitting it to detect the shorter wavelengths in the radiation and causing the topmost quaternary layer (205) to have the lower bandgap energy thereby permitting it to detect the longer wavelengths. The bottom contact (213) on the substrate has an opening thereby providing a window (230) through which incoming radiation (250) can be coupled through the substrate to the two quaternary layers.
摘要翻译：公开了三端，全集成解复用光电二极管，其中同时存在于两个波长处的信息可以被发展成在三个端子处可用的两个分离的电流。通过n型磷化铟的缓冲层（204）分离具有不等带隙并且各具有pn结的铟，镓，砷化磷的两个四元层（203和205）。通过使底部四周层具有较高的带隙能量从而允许其检测到辐射中的较短波长并且使最顶层的四分层（205）具有较低的带隙能量从而允许其检测到波长较长。衬底上的底部触点（213）具有开口，从而提供窗口（230），入射辐射（250）可以通过该窗口通过衬底耦合到两个四层。

2. 发明授权

US4689125A Fabrication of cleaved semiconductor lasers 失效
标题翻译：切割半导体激光器的制造
公开(公告)号：US4689125A
公开(公告)日：1987-08-25
申请号：US869802
申请日：1986-05-28
申请人： Charles A. Burrus, Jr. , Paul A. Kohl , Tien P. Lee , Frederick W. Ostermayer, Jr.
发明人： Charles A. Burrus, Jr. , Paul A. Kohl , Tien P. Lee , Frederick W. Ostermayer, Jr.
IPC分类号： H01L21/302 , H01L21/3063 , H01L21/465 , H01L33/00 , H01L33/28 , H01L33/30 , H01S5/02 , H01S5/10 , C25F3/12
CPC分类号： H01L33/28 , H01L21/30635 , H01L21/465 , H01L33/005 , H01L33/30 , H01S5/0201 , H01S5/0202 , H01S5/0203 , H01S5/1039
摘要： A process is described for making semiconductor lasers with cleaved facets for end mirrors. The process involves electrochemically photoetching slots with deep, narrow cross-sections in a wafer and applying stress to cleave the wafer in the desired place. Extremely short and reproducible semiconductor lasers can be made by this procedure (less than 50 or even 25 .mu.m) which yields extremely useful semiconductor lasers particularly for communication applications. Also, the procedure requires a minimum of skill to produce excellent quality cleaved semiconductor lasers (including short-length lasers) with high yields.
摘要翻译：描述了用于制造具有用于端镜的切割面的半导体激光器的工艺。该方法涉及在晶片中电化学光刻槽，其具有深而窄的横截面，并施加应力以将晶片切割到期望的位置。可以通过这种方法（小于50甚至25微米）制造出非常短且可重复的半导体激光器，其产生非常有用的半导体激光器，特别是用于通信应用。此外，该方法需要最小的技术以产生具有高产率的优质的切割半导体激光器（包括短长度激光器）。

3. 发明授权

US4213138A Demultiplexing photodetector 失效
标题翻译：解复用光电探测器
公开(公告)号：US4213138A
公开(公告)日：1980-07-15
申请号：US969346
申请日：1978-12-14
申请人： Joe C. Campbell , Tien P. Lee
发明人： Joe C. Campbell , Tien P. Lee
IPC分类号： H01L31/10 , H01L27/15 , H01L31/11 , H01L31/12 , H01L27/14 , H01L29/161
CPC分类号： H01L31/125 , H01L27/15 , H01L31/11
摘要： A 3-terminal totally integrated demultiplexing photodiode is disclosed wherein information present simultaneously at two wavelengths can be developed into two separate currents available at the three terminals. Two quaternary n-type layers (103 and 105) of indium gallium arsenide phoshide having unequal bandgaps and each having a pn junction are separated by a layer of (104) of n-type indium phosphide. The device is oriented so as to present the incoming radiation first to the quaternary layer having the larger bandgap and then to the quaternary layer having the lower bandgap. One of the contacts (111) is attached to the top layer (106) of n-type indium phosphide, a second contact (112) is attached to a central p-type region (110) established in the top layer of indium phosphide and penetrating through to the top quaternary layer, and the third contact (113 or 302) is connected either to the indium phosphide substrate (101) or to a p-type outer region (301) that surrounds all of the layers. By reversing the dc potential applied to the junctions in the quaternary layers, a dual-wavelength light emitting diode is provided.
摘要翻译：公开了一种三端全集成解复用光电二极管，其中同时存在于两个波长处的信息可以被发展成在三个端子处可用的两个分离的电流。具有不等带隙并且各自具有pn结的砷化铟镓磷光体的两个四元体n型层（103和105）被n型磷化铟的（104）层隔开。器件被定向成将入射辐射首先呈现到具有较大带隙的四元层，然后到具有较低带隙的四元层。触点（111）中的一个连接到n型磷化铟的顶层（106）上，第二触点（112）连接到建立在磷化铟顶层中的中心p型区域（110），穿透到顶部四周层，并且第三触点（113或302）连接到磷化铟基板（101）或围绕所有层的p型外部区域（301）。通过反转施加到四元层中的结的直流电位，提供了双波长发光二极管。

4. 发明授权

US4152713A Unidirectional optical device and regenerator 失效
标题翻译：单向光学装置和再生器
公开(公告)号：US4152713A
公开(公告)日：1979-05-01
申请号：US857369
申请日：1977-12-05
申请人： John A. Copeland, III , Andrew G. Dentai , Tien P. Lee
发明人： John A. Copeland, III , Andrew G. Dentai , Tien P. Lee
IPC分类号： H01L31/10 , G02B6/42 , H01L31/02 , H01L31/12 , H01L31/153 , H01L33/00 , H01S5/06 , H04B10/02 , H04B10/17 , H04B10/28
CPC分类号： H04B10/2914 , G02B6/4202 , G02B6/4295 , H01L31/153 , H01S5/0608 , H04B10/299 , H01L27/15
摘要： A light-activated light-emitting device has at least one p-n junction provided with electrodes for confining light-emission to an area of the junction. It has been determined that light-emission can be activated by light impinging on the junction outside this confined area, so two optical fibers are provided, one being an input fiber for bringing activating light to the nonemitting sensitive part of the junction and the other fiber being an output fiber coupled to the light-emitting area. When the device is a p-n-p-n light-activated light-emitting switch provided with an RCL reset control circuit, a very inexpensive unidirectional optical pulse regenerator is obtained. The device in its various forms is advantageously suited for use in each of many stations along optical fiber data busses or in optical logic arrays because the unidirectional feature prevents light feedback between adjacent devices and consequently avoids spurious switching of a preceding device.
摘要翻译：光激发的发光器件具有至少一个p-n结，其设置有用于将发光限制在接合区域的电极。已经确定，通过光照射在该限制区域外部的接合处可以激发发光，因此提供了两个光纤，一个是用于将激活光引导到接头的非测试敏感部分的输入光纤，另一个光纤作为耦合到发光区域的输出光纤。当该装置是具有RCL复位控制电路的p-n-p-n激光发光开关时，获得非常便宜的单向光脉冲再生器。其各种形式的装置有利地适用于沿着光纤数据总线或光逻辑阵列的许多站中的每一个，因为单向特征防止相邻设备之间的光反馈并因此避免了先前设备的伪切换。

5. 发明授权

US4374390A Dual-wavelength light-emitting diode 失效
标题翻译：双波长发光二极管
公开(公告)号：US4374390A
公开(公告)日：1983-02-15
申请号：US185666
申请日：1980-09-10
申请人： Tien P. Lee
发明人： Tien P. Lee
IPC分类号： H01L33/00 , H01L33/30 , H01L33/64 , H01S5/00 , H04B10/155 , H01L29/06
CPC分类号： H01L33/647 , H01L33/0016 , H01L33/30 , H04B10/502 , H04B10/506 , H01L33/641
摘要： A dual-wavelength light-emitting diode (10) is disclosed wherein at least two quaternary layers (102 and 104) are epitaxially grown on indium phosphide substrate (100) and a top indium phosphide layer (105) of the opposite conductivity type is grown to establish a junction (121) in the topmost quaternary layer. An isolation channel (106) cuts through the epitaxial layers and divides the device into two separate regions. A dopant is diffused into one of the regions in order to establish a pn junction (122) in the bottom quaternary layer. Independent electrical contacts (107 and 108) bonded to the top indium phosphide layer in each of the regions establish an electrical connection to pn junctions in each of the two separate regions. The device can be effectively heat sinked by mounting the epitaxial layer side of the substrate to a beryllium oxide heat sink (200) onto which gold bonding pads (201 and 202) have been plated.
摘要翻译：公开了一种双波长发光二极管（10），其中在磷化铟衬底（100）上外延生长至少两个四元层（102和104），并且生长相反导电型的顶部磷化铟层（105）以在最顶层的四层中建立连接点（121）。隔离通道（106）穿过外延层并将器件分成两个分开的区域。掺杂剂扩散到其中一个区域，以便在底部四层中形成pn结（122）。结合到每个区域中的顶部磷化铟层的独立电触点（107和108）与两个分开的区域中的每一个中的pn结形成电连接。通过将衬底的外延层侧安装到已经镀有金焊盘（201和202）的氧化铍散热器（200）上，该器件可以被有效地散热。

6. 发明授权

US4323911A Demultiplexing photodetectors 失效
标题翻译：解复用光检测器
公开(公告)号：US4323911A
公开(公告)日：1982-04-06
申请号：US127942
申请日：1980-03-07
申请人： Joe C. Campbell , Tien P. Lee
发明人： Joe C. Campbell , Tien P. Lee
IPC分类号： H01L27/15 , H01L31/11 , H01L31/12 , H01L27/14 , H01L29/161
CPC分类号： H01L31/11 , H01L27/15 , H01L31/125
摘要： A 3-terminal totally integrated demultiplexing photodiode is disclosed wherein information present simultaneously at two wavelengths can be developed into two separate currents available at the three terminals. Two quaternary n-type layers (103 and 105) of indium gallium arsenide phosphide having unequal bandgaps and each having a pn junction are separated by a layer (104) of n-type indium phosphide. The device is oriented so as to present the incoming radiation first to the quaternary layer having the larger bandgap and then to the quaternary layer having the lower bandgap. One of the contacts (111) is attached to the top layer (106) of n-type indium phosphide, a second contact (112) is attached to a central p-type region (110) established in the top layer of indium phosphide and penetrating through the top quaternary layer, and the third contact (113 or 302) is connected either to the indium phosphide substrate (101) or to a p-type outer region (301) that surrounds all of the layers. By reversing the dc potential applied to the junctions in the quaternary layers, a dual-wavelength light emitting diode is provided.
摘要翻译：公开了一种三端全集成解复用光电二极管，其中同时存在于两个波长处的信息可以被发展成在三个端子处可用的两个分离的电流。具有不等带隙并且各自具有pn结的铟镓砷化镓的两个四元n型层（103和105）被n型磷化铟的层（104）隔开。器件被定向成将入射辐射首先呈现到具有较大带隙的四元层，然后到具有较低带隙的四元层。触点（111）中的一个连接到n型磷化铟的顶层（106）上，第二触点（112）连接到建立在磷化铟顶层中的中心p型区域（110），穿过顶部四周层，并且第三触点（113或302）连接到磷化铟基板（101）或连接到围绕所有层的p型外部区域（301）。通过反转施加到四元层中的结的直流电位，提供了双波长发光二极管。

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