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1. 发明授权

US09721754B2 Method and apparatus for processing a substrate with a focused particle beam 有权
公开(公告)号：US09721754B2
公开(公告)日：2017-08-01
申请号：US13103281
申请日：2011-05-09
申请人： Tristan Bret , Petra Spies , Thorsten Hofmann
发明人： Tristan Bret , Petra Spies , Thorsten Hofmann
IPC分类号： H01J37/304 , B82Y10/00 , B82Y40/00 , G03F1/74 , H01J37/305
CPC分类号： H01J37/3045 , B82Y10/00 , B82Y40/00 , G03F1/74 , H01J37/3056 , H01J2237/31737 , H01J2237/31744
摘要： The invention relates to a method for processing a substrate with a focussed particle beam which incidents on the substrate, the method comprising the steps of: (a) generating at least one reference mark on the substrate using the focused particle beam and at least one processing gas, (b) determining a reference position of the at least one reference mark, (c) processing the substrate using the reference position of the reference mark, and (d) removing the at least one reference mark from the substrate.

2. 发明授权

US08674329B2 Method and apparatus for analyzing and/or repairing of an EUV mask defect 有权
标题翻译：用于分析和/或修复EUV掩模缺陷的方法和装置
公开(公告)号：US08674329B2
公开(公告)日：2014-03-18
申请号：US13805960
申请日：2011-06-24
申请人： Michael Budach , Tristan Bret , Klaus Edinger , Thorsten Hofmann , Heiko Feldmann , Johannes Ruoff
发明人： Michael Budach , Tristan Bret , Klaus Edinger , Thorsten Hofmann , Heiko Feldmann , Johannes Ruoff
IPC分类号： G21K5/04
CPC分类号： G01N21/95 , B82Y10/00 , B82Y40/00 , C23C14/48 , G03B27/68 , G03F1/24 , G03F1/72 , G03F1/74 , G03F1/84 , G03F7/705 , G03F7/7065 , G06F17/5009 , G06T7/0002 , G21K5/00
摘要： The invention relates to a method for analyzing a defect of a photolithographic mask for an extreme ultraviolet (EUV) wavelength range (EUV mask) comprising the steps of: (a) generating at least one focus stack relating to the defect using an EUV mask inspection tool, (b) determining a surface configuration of the EUV mask at a position of the defect, (c) providing model structures having the determined surface configuration which have different phase errors and generating the respective focus stacks, and (d) determining a three dimensional error structure of the EUV mask defect by comparing the at least one generated focus stack of the defect and the generated focus stacks of the model structures.
摘要翻译：本发明涉及一种用于分析用于极紫外（EUV）波长范围（EUV掩模）的光刻掩模的缺陷的方法，包括以下步骤：（a）使用EUV掩模检查产生与缺陷有关的至少一个焦点叠层工具，（b）在缺陷的位置确定EUV掩模的表面结构，（c）提供具有确定的表面配置的模型结构，其具有不同的相位误差并产生相应的焦点堆叠，以及（d）确定三维通过比较所述缺陷的至少一个生成的焦点堆栈和所产生的模型结构的焦点堆栈，来确定EUV掩模缺陷的三维误差结构。

3. 发明授权

US08318593B2 Method for electron beam induced deposition of conductive material 有权
标题翻译：电子束诱导沉积导电材料的方法
公开(公告)号：US08318593B2
公开(公告)日：2012-11-27
申请号：US13058493
申请日：2009-08-07
申请人： Nicole Auth , Petra Spies , Rainer Becker , Thorsten Hofmann , Klaus Edinger
发明人： Nicole Auth , Petra Spies , Rainer Becker , Thorsten Hofmann , Klaus Edinger
IPC分类号： H01L21/44
CPC分类号： C23C16/487 , C23C16/047 , C23C16/16 , H01L21/28556 , H01L21/76879 , H01L21/76892 , H01L21/76898
摘要： The invention relates to a method for electron beam induced deposition of electrically conductive material from a metal carbonyl with the method steps of providing at least one electron beam at a position of a substrate, storing at least one metal carbonyl at a first temperature, and heating the at least one metal carbonyl to at least one second temperature prior to the provision at the position at which the at least one electron beam impacts on the substrate.
摘要翻译：本发明涉及一种用于电子束从金属羰基沉积导电材料的方法，其方法步骤是在衬底的位置处提供至少一个电子束，在第一温度下储存至少一种金属羰基，以及加热所述至少一种金属羰基至少在所述至少一个电子束冲击所述基底的位置之前提供至少一个第二温度。

4. 发明申请

US20120273458A1 METHOD AND APPARATUS FOR PROCESSING A SUBSTRATE WITH A FOCUSED PARTICLE BEAM 有权
标题翻译：用聚焦粒子束处理衬底的方法和装置
公开(公告)号：US20120273458A1
公开(公告)日：2012-11-01
申请号：US13103281
申请日：2011-05-09
申请人： Tristan Bret , Petra Spies , Thorsten Hofmann
发明人： Tristan Bret , Petra Spies , Thorsten Hofmann
IPC分类号： C23F1/00 , B08B7/00 , B05C11/00 , C23F1/08 , C23C16/48 , C23C16/52
CPC分类号： H01J37/3045 , B82Y10/00 , B82Y40/00 , G03F1/74 , H01J37/3056 , H01J2237/31737 , H01J2237/31744
摘要： The invention relates to a method for processing a substrate with a focussed particle beam which incidents on the substrate, the method comprising the steps of: (a) generating at least one reference mark on the substrate using the focused particle beam and at least one processing gas, (b) determining a reference position of the at least one reference mark, (c) processing the substrate using the reference position of the reference mark, and (d) removing the at least one reference mark from the substrate.
摘要翻译：本发明涉及一种用于处理在衬底上发生聚焦的粒子束的衬底的方法，所述方法包括以下步骤：（a）使用聚焦粒子束在衬底上产生至少一个参考标记，并且至少一个处理气体，（b）确定所述至少一个参考标记的参考位置，（c）使用所述参考标记的参考位置处理所述衬底，以及（d）从所述衬底去除所述至少一个参考标记。

5. 发明申请

US20130156939A1 METHOD AND APPARATUS FOR ANALYZING AND/OR REPAIRING OF AN EUV MASK DEFECT 有权
标题翻译：用于分析和/或修复EUV掩蔽缺陷的方法和装置
公开(公告)号：US20130156939A1
公开(公告)日：2013-06-20
申请号：US13805960
申请日：2011-06-24
申请人： Michael Budach , Tristan Bret , Klaus Edinger , Thorsten Hofmann , Heiko Feldmann , Johannes Ruoff
发明人： Michael Budach , Tristan Bret , Klaus Edinger , Thorsten Hofmann , Heiko Feldmann , Johannes Ruoff
IPC分类号： G01N21/95 , G06F17/50 , G03B27/68 , G06T7/00 , C23C14/48 , G21K5/00
CPC分类号： G01N21/95 , B82Y10/00 , B82Y40/00 , C23C14/48 , G03B27/68 , G03F1/24 , G03F1/72 , G03F1/74 , G03F1/84 , G03F7/705 , G03F7/7065 , G06F17/5009 , G06T7/0002 , G21K5/00
摘要： The invention relates to a method for analyzing a defect of a photolithographic mask for an extreme ultraviolet (EUV) wavelength range (EUV mask) comprising the steps of: (a) generating at least one focus stack relating to the defect using an EUV mask inspection tool, (b) determining a surface configuration of the EUV mask at a position of the defect, (c) providing model structures having the determined surface configuration which have different phase errors and generating the respective focus stacks, and (d) determining a three dimensional error structure of the EUV mask defect by comparing the at least one generated focus stack of the defect and the generated focus stacks of the model structures.
摘要翻译：本发明涉及一种用于分析用于极紫外（EUV）波长范围（EUV掩模）的光刻掩模的缺陷的方法，包括以下步骤：（a）使用EUV掩模检查产生与缺陷有关的至少一个焦点叠层工具，（b）在缺陷的位置确定EUV掩模的表面结构，（c）提供具有确定的表面配置的模型结构，其具有不同的相位误差并产生相应的焦点堆叠，以及（d）确定三维通过比较所述缺陷的至少一个生成的焦点堆栈和所产生的模型结构的焦点堆栈，来确定EUV掩模缺陷的三维误差结构。

6. 发明申请

US20110210181A1 APPARATUS AND METHOD FOR INVESTIGATING AND/OR MODIFYING A SAMPLE 有权
标题翻译：用于调查和/或修改样品的装置和方法
公开(公告)号：US20110210181A1
公开(公告)日：2011-09-01
申请号：US12745059
申请日：2010-05-27
申请人： Klaus Edinger , Rainer Becker , Michael Budach , Thorsten Hofmann
发明人： Klaus Edinger , Rainer Becker , Michael Budach , Thorsten Hofmann
IPC分类号： B05B5/025
CPC分类号： C23F4/00 , H01J37/3056 , H01J2237/28 , H01J2237/3174 , H01L21/76894 , H01L22/22 , H01L2924/0002 , H01L2924/00
摘要： An apparatus and a method for investigating and/or modifying a sample is disclosed. The apparatus comprises a charged particle source, at least one particle optical element forming a charged particle beam of charged particles emitted by said charged particle source. The apparatus further comprises an objective lens which generates a charged particle probe from said charged particle beam. The objective lens defines a particle optical axis. A first electrostatic deflection element is arranged—in a direction of propagation of charged particles emitted by said charged particle source—downstream of the objective lens. The electrostatic deflection element deflecting the charged particle beam in a direction perpendicular to said charged particle optical axis and has a deflection bandwidth of at least 10 MHz.
摘要翻译：公开了一种用于调查和/或修改样品的装置和方法。所述装置包括带电粒子源，至少一个粒子光学元件，形成由所述带电粒子源发射的带电粒子的带电粒子束。该装置还包括从所述带电粒子束产生带电粒子探针的物镜。物镜定义了粒子光轴。第一静电偏转元件布置在由物镜的下游的所述带电粒子源发射的带电粒子的传播方向上。静电偏转元件使垂直于所述带电粒子光轴的方向偏转带电粒子束并具有至少10MHz的偏转带宽。

7. 发明申请

US20110183444A1 METHOD FOR ELECTRON BEAM INDUCED ETCHING 有权
标题翻译：电子束诱导蚀刻的方法
公开(公告)号：US20110183444A1
公开(公告)日：2011-07-28
申请号：US13058587
申请日：2009-08-13
申请人： Nicole Auth , Petra Spies , Rainer Becker , Thorsten Hofmann , Klaus Edinger
发明人： Nicole Auth , Petra Spies , Rainer Becker , Thorsten Hofmann , Klaus Edinger
IPC分类号： H01L21/66 , C23F1/08
CPC分类号： H01L21/3065 , H01L21/31116 , H01L21/32136
摘要： The invention relates to a method for electron beam induced etching of a material (100, 200) with the method steps providing at least one etching gas at a position of the material (100, 200) at which an electron beam impacts on the material (100, 200) and simultaneously providing at least one passivation gas which is adapted for slowing down or inhibiting a spontaneous etching by the at least one etching gas
摘要翻译：本发明涉及一种用于电子束感应蚀刻材料（100,200）的方法，该方法步骤在电子束撞击材料（100,200）的位置提供至少一种蚀刻气体（ 100,200），并且同时提供至少一个钝化气体，所述钝化气体适于减缓或抑制所述至少一种蚀刻气体的自发蚀刻

8. 发明授权

US07786403B2 Method for high-resolution processing of thin layers using electron beams 有权
标题翻译：使用电子束对薄层进行高分辨率处理的方法
公开(公告)号：US07786403B2
公开(公告)日：2010-08-31
申请号：US10927956
申请日：2004-08-27
申请人： Hans Koops , Klaus Edinger , Sergey Babin , Thorsten Hofmann , Petra Spies
发明人： Hans Koops , Klaus Edinger , Sergey Babin , Thorsten Hofmann , Petra Spies
IPC分类号： B23K15/00 , H01L21/302 , H01L21/461
CPC分类号： G03F1/74 , C23F1/12 , H01J2237/31744 , H01L21/32135
摘要： A method for etching a chromium layer in a vacuum chamber which may comprise introducing a halogen compound into the vacuum chamber, directing an electron beam onto the area of the chromium layer to be etched and/or introducing an oxygen including compound into the vacuum chamber. A further method for the highly resolved removal of a layer out of metal and/or metal oxide which may be arranged on an isolator or a substrate having poor thermal conductivity, may comprise arranging the layer inside a vacuum chamber, bombarding the layer with a focused electron beam with an energy of 3-30 keV, wherein the electron beam may be guided such that the energy transfer per time and area causes a localized heating of the layer above its melting and/or vaporization point and wherein the removal of the layer may be performed without the supply of reaction gases into the vacuum chamber.
摘要翻译：一种用于在真空室中蚀刻铬层的方法，其可以包括将卤素化合物引入真空室，将电子束引导到要蚀刻的铬层的区域和/或将含氧化合物引入真空室中。用于高分辨率地去除可以布置在具有差热导率的隔离器或基板上的金属和/或金属氧化物层的另外的方法可以包括将层布置在真空室内，用聚焦的方式轰击该层电子束的能量为3-30keV，其中电子束可被引导，使得每时间和面积的能量传递导致该层在其熔化和/或蒸发点之上的局部加热，并且其中该层的去除可以在没有将反应气体供应到真空室中的情况下进行。

9. 发明授权

US07232997B2 Apparatus and method for investigating or modifying a surface with a beam of charged particles 有权
标题翻译：用带电粒子束调查或修改表面的装置和方法
公开(公告)号：US07232997B2
公开(公告)日：2007-06-19
申请号：US11106368
申请日：2005-04-14
申请人： Klaus Edinger , Josef Sellmair , Thorsten Hofmann
发明人： Klaus Edinger , Josef Sellmair , Thorsten Hofmann
IPC分类号： G01N23/00
CPC分类号： H01J37/026 , G01N23/2273 , H01J37/28 , H01J37/3056 , H01J2237/0044 , H01J2237/026
摘要： An apparatus for investigating and/or modifying a sample with charged particles, in particular a scanning electron microscope, is provided. The apparatus comprises a beam (1, 2) of charged particles, a shielding element (10) having an opening (30) for the beam of charged particles to pass through, wherein the opening (30) is sufficiently small and the shielding element (10) sufficiently closely positioned to the surface (20) of the sample to reduce the influence of charge accumulation effects at the surface on the beam of charged particles.
摘要翻译：提供了一种用于研究和/或修饰具有带电粒子的样品的装置，特别是扫描电子显微镜。该设备包括带电粒子的束（1,2），具有用于带电粒子束通过的开口（30）的屏蔽元件（10），其中开口（30）足够小并且屏蔽元件 10）足够紧密地定位于样品的表面（20），以减少带电粒子束上的表面处的电荷累积效应的影响。

10. 发明申请

US20050087514A1 Method for high-resolution processing of thin layers using electron beams 有权
标题翻译：使用电子束对薄层进行高分辨率处理的方法
公开(公告)号：US20050087514A1
公开(公告)日：2005-04-28
申请号：US10927956
申请日：2004-08-27
申请人： Hans Koops , Klaus Edinger , Sergey Babin , Thorsten Hofmann , Petra Spies
发明人： Hans Koops , Klaus Edinger , Sergey Babin , Thorsten Hofmann , Petra Spies
IPC分类号： C23F1/12 , H01L21/3213 , C23F1/00
CPC分类号： G03F1/74 , C23F1/12 , H01J2237/31744 , H01L21/32135
摘要： A method for etching a chromium layer in a vacuum chamber which may comprise introducing a halogen compound into the vacuum chamber, directing an electron beam onto the area of the chromium layer to be etched and/or introducing an oxygen including compound into the vacuum chamber. A further method for the highly resolved removal of a layer out of metal and/or metal oxide which may be arranged on an isolator or a substrate having poor thermal conductivity, may comprise arranging the layer inside a vacuum chamber, bombarding the layer with a focused electron beam with an energy of 3-30 keV, wherein the electron beam may be guided such that the energy transfer per time and area causes a localized heating of the layer above its melting and/or vaporization point and wherein the removal of the layer may be performed without the supply of reaction gases into the vacuum chamber.
摘要翻译：一种用于在真空室中蚀刻铬层的方法，其可以包括将卤素化合物引入真空室，将电子束引导到要蚀刻的铬层的区域和/或将含氧化合物引入真空室中。用于高分辨率地去除可以布置在具有差热导率的隔离器或基板上的金属和/或金属氧化物层的另外的方法可以包括将层布置在真空室内，用聚焦的方式轰击该层电子束的能量为3-30keV，其中电子束可被引导，使得每时间和面积的能量传递导致该层在其熔化和/或蒸发点之上的局部加热，并且其中该层的去除可以在没有将反应气体供应到真空室中的情况下进行。

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