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1. 发明申请

US20140077189A1 ORGANIC LIGHT EMITTING DEVICE AND METHOD 审中-公开
标题翻译：有机发光装置及方法
公开(公告)号：US20140077189A1
公开(公告)日：2014-03-20
申请号：US14009333
申请日：2012-04-02
申请人： Thomas Kugler , Richard Wilson , Sarah M. Tyler , Shohgo Yamauchi , Masato Shakutsui , Tadashi Goda , Norihito Ito
发明人： Thomas Kugler , Richard Wilson , Sarah M. Tyler , Shohgo Yamauchi , Masato Shakutsui , Tadashi Goda , Norihito Ito
IPC分类号： H01L51/00 , H01L51/56 , H01L51/52
CPC分类号： H01L51/0035 , B82Y10/00 , C08G61/12 , C08G2261/3142 , C08G2261/3162 , C08G2261/3221 , C08G2261/3245 , C08G2261/5242 , C08G2261/95 , C08K3/045 , H01L51/0039 , H01L51/0043 , H01L51/0046 , H01L51/0047 , H01L51/0085 , H01L51/5088 , H01L51/5215 , H01L51/56 , C08L65/00
摘要： An organic light-emitting device comprises an anode; a hole injection layer in contact with the anode; a light-emitting layer over the hole injection layer; and a cathode over the light-emitting layer, wherein the hole injection layer comprises an organic semiconductor material doped with a partially fluorinated fullerene such as C60. The dopant is present in the range of about 0.1-20 wt %, optionally 0.1-5 wt %. The organic semiconductor is preferably a polymer comprising repeat units of formula (I): wherein Ar1 and Ar2 in each occurrence are independently selected from optionally substituted aryl or heteroaryl groups; n is greater than or equal to 1, preferably 1 or 2; R is H or a substituent; any of Ar1, Ar2 and R may be linked by a direct bond or linking group; and x and y are each independently 1, 2 or 3.
摘要翻译：有机发光装置包括阳极; 与阳极接触的空穴注入层; 空穴注入层上的发光层; 以及在发光层上的阴极，其中空穴注入层包含掺杂有部分氟化的富勒烯如C60的有机半导体材料。掺杂剂存在的范围为约0.1-20重量％，任选0.1-5重量％。有机半导体优选为包含式（I）的重复单元的聚合物：其中每次出现的Ar 1和Ar 2独立地选自任选取代的芳基或杂芳基; n大于或等于1，优选1或2; R是H或取代基; Ar1，Ar2和R中的任一个可以通过直接键或连接基团连接; x和y各自独立地为1,2或3。

2. 发明授权

US08178807B2 Electrical switch 有权
标题翻译：电开关
公开(公告)号：US08178807B2
公开(公告)日：2012-05-15
申请号：US12432043
申请日：2009-04-29
申请人： Immanuel Aichele , Thomas Kugler , Heinrich Müller
发明人： Immanuel Aichele , Thomas Kugler , Heinrich Müller
IPC分类号： H01H5/06
CPC分类号： H01H21/245
摘要： The invention relates to an electrical switch, in particular in the form of a microswitch and/or snap-action switch, having a housing which comprises a base and a cover. The switch has a contact system, which comprises a movable switching contact and at least one stationary contact. Furthermore, the switch has a moving operating member for switching of the contact system. The cover is mounted on the base such that it can move, and the operating member is formed by the cover.
摘要翻译：本发明涉及电开关，特别是微开关和/或快动开关的形式，其具有包括基座和盖子的壳体。开关具有接触系统，其包括可移动开关触点和至少一个固定触点。此外，开关具有用于切换接触系统的移动操作构件。盖安装在基座上，使其能够移动，并且操作构件由盖形成。

3. 发明授权

US07952090B2 Electrochemical thin-film transistor 有权
标题翻译：电化学薄膜晶体管
公开(公告)号：US07952090B2
公开(公告)日：2011-05-31
申请号：US12155707
申请日：2008-06-09
申请人： Thomas Kugler
发明人： Thomas Kugler
IPC分类号： H01L51/30
CPC分类号： G02F1/163 , G02F2001/1635 , G09G3/38 , H01L51/055
摘要： An electrochemical transistor comprising an electrolyte is disclosed. The electrolyte includes an ionic liquid. In a preferred embodiment, the transistor further comprises a source electrode, a drain electrode separated from the source electrode so as to form a gap between the source and drain electrodes, a semiconductor layer bridging the gap between the source and drain electrodes to form a transistor channel, and a gate electrode separated from the source electrode, the drain electrode and the semiconductor layer. In this embodiment, the electrolyte is disposed so as to contact at least a part of both the semiconductor layer and the gate electrode.
摘要翻译：公开了一种包含电解质的电化学晶体管。电解质包括离子液体。在优选实施例中，晶体管还包括源电极，与源电极分离的漏电极，以在源极和漏极之间形成间隙;桥接源电极和漏电极之间的间隙的半导体层，以形成晶体管沟道，以及与源电极，漏电极和半导体层分离的栅电极。在该实施例中，电解质被设置成与半导体层和栅电极的至少一部分接触。

4. 发明授权

US07582895B2 Electrochemical device including a channel of an organic material, a gate electrode, and an electrolyte therebetween 有权
标题翻译：电化学装置包括有机材料的通道，栅极电极和它们之间的电解质
公开(公告)号：US07582895B2
公开(公告)日：2009-09-01
申请号：US11327438
申请日：2006-01-09
申请人： Marten Armgarth , Miaioxiang M. Chen , David A. Nilsson , Rolf M. Berggren , Thomas Kugler , Tommi M. Remonen , Robert Forchheimer
发明人： Marten Armgarth , Miaioxiang M. Chen , David A. Nilsson , Rolf M. Berggren , Thomas Kugler , Tommi M. Remonen , Robert Forchheimer
IPC分类号： H01L35/24 , H01L51/00
CPC分类号： H01L51/0508 , B82Y10/00 , C09K9/02 , G02F1/163 , G02F2001/1635 , G02F2202/022 , G11C13/0009 , G11C13/0014 , G11C13/0016 , G11C2213/15 , H01L21/31604 , H01L27/283 , H01L28/56 , H01L51/0037 , H01L51/0097 , H01L51/052 , H01L2924/0002 , H01L2924/00
摘要： Methods of producing electrochemical transistor devices are provided, wherein a solidified electrolyte is arranged in direct contact with at least a portion of an organic material having the ability to electrochemically altering its electrical conductivity through change of redox state thereof, such that a current between a source contact and a drain contact of the transistor is controllable by a voltage applied to a gate electrode. A electrochemical transistor device is also provided, wherein an ion isolative material is provided between a solidified electrolyte and an organic material having the ability to electrochemically altering its redox state, such that a transistor channel of said transistor is defined thereby.
摘要翻译：提供了生产电化学晶体管器件的方法，其中固化的电解质被布置成与至少一部分有机材料直接接触，所述有机材料具有通过其氧化还原状态的改变而电化学地改变其导电性的能力，使得源晶体管的接触和漏极接触由施加到栅电极的电压控制。还提供了一种电化学晶体管器件，其中在固化的电解质和具有电化学改变其氧化还原状态的能力的有机材料之间提供离子隔离材料，从而限定所述晶体管的晶体管沟道。

5. 发明授权

US07582509B2 Micro-embossing fabrication of electronic devices 有权
标题翻译：电子器件的微压花加工
公开(公告)号：US07582509B2
公开(公告)日：2009-09-01
申请号：US11453974
申请日：2006-06-16
申请人： Shunpu Li , Christopher Newsome , David Russell , Thomas Kugler
发明人： Shunpu Li , Christopher Newsome , David Russell , Thomas Kugler
IPC分类号： H01L21/84
CPC分类号： H01L51/0541 , H01L51/0022 , H01L51/0035 , H01L51/0036 , H01L51/052 , H01L51/105 , H01L2251/105
摘要： A method of forming an electronic device on a substrate 10, comprising: embossing the substrate 10, surface treating the substrate so that unindented portions 11 repel a solution of a first material 60, and depositing a solution of the first material 60 in indentations 12 on the substrate 10 formed by the embossing. The substrate is then annealed so that level of the first material is the same as the surface of the substrate. The first material 60 in the indentations can then, for example, be used as the source and drain in the subsequent formation of a TFT.
摘要翻译：一种在基板10上形成电子器件的方法，包括：对基片10进行压花处理，对基片进行表面处理，使得未凹陷部分11排斥第一材料60的溶液，并将第一材料60的溶液沉积在压痕12中通过压花形成的基板10。然后将衬底退火，使得第一材料的水平与衬底的表面相同。然后，凹陷中的第一材料60可以例如在随后的TFT形成中用作源极和漏极。

6. 发明授权

US07517719B2 Method for fabricating a semiconductor element from a dispersion of semiconductor particles 有权
标题翻译：从半导体粒子的分散体制造半导体元件的方法
公开(公告)号：US07517719B2
公开(公告)日：2009-04-14
申请号：US11125138
申请日：2005-05-10
申请人： Thomas Kugler , Christopher Newsome , David Russel , Shunpu Li
发明人： Thomas Kugler , Christopher Newsome , David Russel , Shunpu Li
IPC分类号： H01L51/40
CPC分类号： H01L21/02568 , H01L21/0256 , H01L21/02576 , H01L21/02579 , H01L21/02601 , H01L21/02628 , H01L51/0003 , H01L51/0037 , H01L51/0053 , H01L51/007 , H01L51/0545
摘要： Provided is a method for forming a semiconductor element such as film. The method comprises the steps of: (i) depositing a suspension of particles of a first semiconductor and a solution of a second semiconductor or a precursor thereof on a surface of a substrate such that a mixture comprising the particles of the first semiconductor suspended in a liquid phase comprising the second semiconductor or precursor thereof results thereon; and (ii) solidifying the mixture to form the semiconductor element comprising particles of the first semiconductor in a matrix of the second semiconductor which electrically connects adjacent particles of the first semiconductor, the first and second semiconductors being of the same conductivity type and being formed from either the same or different materials. The method does not require any step of vacuum deposition or sintering.Also provided is a semiconductor element itself. The element comprises semiconductor particles in a matrix of a semiconductor binder that has the same conductivity type as the semiconductor particles and which is the same or a different material than that forming the particles, the semiconductor binder electrically connecting adjacent semiconductor particles.
摘要翻译：提供了一种形成诸如膜的半导体元件的方法。该方法包括以下步骤：（i）将第一半导体和第二半导体或其前体的溶液的悬浮液沉积在基板的表面上，使得包含悬浮在基板中的第一半导体颗粒的混合物在其上产生包含第二半导体或其前体的液相; 和（ii）固化所述混合物以形成所述半导体元件，所述半导体元件包括所述第二半导体的矩阵中的所述第一半导体的粒子，所述第二半导体的矩阵电连接所述第一半导体的相邻颗粒，所述第一和第二半导体具有相同的导电类型，并且由相同或不同的材料。该方法不需要真空沉积或烧结的任何步骤。还提供了半导体元件本身。该元件包括半导体粘合剂的基质中的半导体颗粒，其具有与半导体颗粒相同的导电类型，并且与形成颗粒的材料相同或不同，所述半导体粘结剂将相邻的半导体颗粒电连接。

7. 发明申请

US20090090907A1 Electrochemical device 审中-公开
标题翻译：电化学装置
公开(公告)号：US20090090907A1
公开(公告)日：2009-04-09
申请号：US12314216
申请日：2008-12-05
申请人： Thomas Kugler , Magnus Berggren , Tommi Remonen , Anna Ingalill Malmstrom , Bjorn Knuthammar , Petronella Norberg
发明人： Thomas Kugler , Magnus Berggren , Tommi Remonen , Anna Ingalill Malmstrom , Bjorn Knuthammar , Petronella Norberg
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： H01L51/0508 , G06K19/027 , H01L51/0037 , H01L51/0512 , H01Q1/22 , H01Q1/2225
摘要： An electrochemical device is provided, comprising a source contact connected to a first antenna pad, a drain contact connected to a second antenna pad, at least one gate electrode, an electrochemically active element arranged between, and in direct electrical contact with, the source and drain contacts, which electrochemically active element comprises a transistor channel and is of a material comprising an organic material having the ability of electrochemically altering its conductivity through change of redox state thereof, and a solidified electrolyte in direct electrical contact with the electrochemically active element and the at least one gate electrode and interposed between them in such a way that electron flow between the electrochemically active element and the gate electrode(s) is prevented. In the device, flow of electrons between source contact and drain contact is controllable by means of a voltage applied to the gate electrode(s).
摘要翻译：提供了一种电化学装置，其包括连接到第一天线焊盘的源极触点，连接到第二天线焊盘的漏极触点，至少一个栅极电极，布置在源极和与源极直接电接触的电化学活性元件;以及漏极触点，其电化学活性元件包括晶体管沟道，并且是包括具有通过其氧化还原状态的电化学改变其导电性的能力的有机材料的材料，以及与电化学活性元件直接电接触的固化电解质，至少一个栅电极并且插入在它们之间，使得电化学活性元件和栅电极之间的电子流被阻止。在器件中，源极接触和漏极接触之间的电子流可以通过施加到栅电极的电压来控制。

8. 发明申请

US20090042346A1 Electrolyte pattern and method for manufacturing an electrolyte pattern 有权
标题翻译：电解质图案和制造电解质图案的方法
公开(公告)号：US20090042346A1
公开(公告)日：2009-02-12
申请号：US12155708
申请日：2008-06-09
申请人： Thomas Kugler
发明人： Thomas Kugler
IPC分类号： H01L21/8234
CPC分类号： H01L51/0529 , G02F1/153 , H01L29/4908 , H01L29/78681 , H01L29/7869 , H01L51/055 , H01L51/0558 , H01M2300/0022 , H01M2300/0085
摘要： A method for manufacturing a gel electrolyte pattern is disclosed, the method comprising depositing an electrolyte precursor by inkjet printing onto a gelling agent layer. A gel electrolyte pattern is also disclosed, the gel electrolyte pattern comprising either a mixture of a gelling agent and an electrolyte precursor or the products of a chemical reaction between a gelling agent and an electrolyte precursor.
摘要翻译：公开了一种制造凝胶电解质图案的方法，该方法包括通过喷墨印刷将电解质前体沉积在胶凝剂层上。还公开了凝胶电解质图案，凝胶电解质图案包括胶凝剂和电解质前体的混合物或胶凝剂和电解质前体之间的化学反应的产物。

9. 发明授权

US07468329B2 Dedoping of organic semiconductors 有权
标题翻译：有机半导体的掺杂
公开(公告)号：US07468329B2
公开(公告)日：2008-12-23
申请号：US11350725
申请日：2006-02-10
申请人： David Russell , Thomas Kugler , Christopher Newsome , Shunpu Li
发明人： David Russell , Thomas Kugler , Christopher Newsome , Shunpu Li
IPC分类号： H01L21/469 , H01L23/58
CPC分类号： C08G73/026 , C08G61/10 , C08G61/126 , C08G2261/312
摘要： The present invention relates to a method of dedoping an organic semiconductor comprising the step of contacting a doped organic semiconductor with a compound of formula (1): wherein R1-R8 each independently represents a hydrogen atom or a C1-C6 alkyl group which may be linear or branched and which may be optionally substituted with one or more hydroxyl groups and/or one or more halogen atoms and/or a C1-C3 alkoxy group; one or more pairs of R groups which are not hydrogen may join to form a cyclic group according to the following pairings: R1 and R2; R2 and R3; R3 and R4; R4 and R5; R5 and R6; R6 and R7; R7 and R8; and R8 and R1.
摘要翻译：本发明涉及一种去掺杂有机半导体的方法，包括使掺杂的有机半导体与式（1）化合物接触的步骤：其中R 1 -R 8各自独立地表示氢原子或可以是其可任选被一个或多个羟基和/或一个或多个卤素原子和/或C 1 -C 3烷氧基取代; 一对或多对不是氢的R基团可以根据以下配对连接形成环状基团：R1和R2; R2和R3; R3和R4; R4和R5; R5和R6; R6和R7; R7和R8; 和R8和R1。

10. 发明授权

US07439193B2 Patterning method for fabricating high resolution structures 失效
标题翻译：用于制造高分辨率结构的图案化方法
公开(公告)号：US07439193B2
公开(公告)日：2008-10-21
申请号：US11320582
申请日：2005-12-30
申请人： Shunpu Li , Christopher Newsome , David Russell , Thomas Kugler
发明人： Shunpu Li , Christopher Newsome , David Russell , Thomas Kugler
IPC分类号： H01L21/00
CPC分类号： H01L21/0338 , H01L21/0272 , H01L21/0331 , H01L21/0337 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L27/1292 , H01L27/285 , H01L51/0021 , H01L51/0036 , H01L51/0516 , H01L51/0541 , H01L51/105
摘要： Provided is a patterning method capable of fabricating high resolution structures without using a high resolution patterning step. The method comprises the steps of: (i) pre-patterning a layer of material (12) on a substrate (10), (ii) spin-coating a solution of a film-forming substance over the pre-patterned substrate, (iii) drying the spin-coated solution to form a film (14) of the film-forming substance on the unpatterned areas of the substrate and on the surface and sides of the pre-patterned material, (iv) etching the dried film in such a way that it remains only around the sides of the pre-patterned material, and (v) removing the pre-patterned material to leave ridges (20) of the film-forming substance on the substrate, the pattern of the ridges corresponding to the outline of the pre-patterned material.A metal layer may then be deposited on the resulting patterned substrate followed by removal of the ridges leaving discrete areas of metal which form latent source and drain electrodes of a thin film transistor. An array of thin film transistors may then be formed by selectively depositing areas of semiconductor, insulator and conductor, the latter forming a gate electrode associated with each pair of source and drain electrodes.
摘要翻译：提供了一种能够在不使用高分辨率图案化步骤的情况下制造高分辨率结构的图案化方法。该方法包括以下步骤：（i）在衬底（10）上预先图案化材料层（12），（ii）在预图案化衬底上旋涂成膜物质的溶液，（iii））干燥旋转涂覆的溶液以在基底的未图案区域和预图案化材料的表面和侧面上形成成膜物质的膜（14），（iv）将这样的干燥膜蚀刻它仅保留在预图案化材料的侧面周围，并且（v）去除预先图案化的材料以将成膜物质的脊（20）留在衬底上，对应于轮廓的脊的图案的预图案材料。然后可以在所得到的图案化衬底上沉积金属层，然后去除留下形成薄膜晶体管的潜在源极和漏极的离散的金属区域的脊。然后可以通过选择性地沉积半导体，绝缘体和导体的区域来形成薄膜晶体管阵列，后者形成与每对源极和漏极电极相关联的栅电极。

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