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1. 发明授权

US08580076B2 Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith 有权
标题翻译：等离子体装置，用于等离子体装置的气体分配组件及其处理
公开(公告)号：US08580076B2
公开(公告)日：2013-11-12
申请号：US10249962
申请日：2003-05-22
申请人： Alan Frederick Becknell , Thomas James Buckley , David Ferris , Richard E. Pingree, Jr. , Palanikumaran Sakthivel , Aseem Kumar Srivastava , Carlo Waldfried
发明人： Alan Frederick Becknell , Thomas James Buckley , David Ferris , Richard E. Pingree, Jr. , Palanikumaran Sakthivel , Aseem Kumar Srivastava , Carlo Waldfried
IPC分类号： H01L21/3065 , C23C16/00 , C23C16/4412 , C23C16/455 , C23C16/45561 , C23C16/45563 , C23C16/46 , C23C16/505 , C23C16/511
CPC分类号： H01J37/32357 , H01J37/3244 , H01J37/32844 , Y02C20/30
摘要： A plasma apparatus, various components of the plasma apparatus, and an oxygen free and nitrogen free processes for effectively removing photoresist material and post etch residues from a substrate with a carbon and/or hydrogen containing low k dielectric layer(s).
摘要翻译：等离子体装置，等离子体装置的各种部件，以及无氧和无氮的方法，用于有效地去除光致抗蚀剂材料，并且用含有低k电介质层的碳和/或氢的底物后蚀刻残留物。

2. 发明授权

US08268181B2 Plasma ashing apparatus and endpoint detection process 有权
标题翻译：等离子灰化装置和端点检测过程
公开(公告)号：US08268181B2
公开(公告)日：2012-09-18
申请号：US12552316
申请日：2009-09-02
申请人： Aseem Kumar Srivastava , Palanikumaran Sakthivel , Thomas James Buckley
发明人： Aseem Kumar Srivastava , Palanikumaran Sakthivel , Thomas James Buckley
IPC分类号： G01L21/30 , G01R31/00
CPC分类号： H01L21/67253 , G03F7/427 , H01J37/32357 , H01J37/32834 , H01J37/32935 , H01J2237/3342 , H01L21/67069
摘要： A plasma ashing apparatus for removing organic matter from a substrate including a low k dielectric, comprising a first gas source; a plasma generating component in fluid communication with the first gas source; a process chamber in fluid communication with the plasma generating component; an exhaust conduit in fluid communication with the process chamber; wherein the exhaust conduit comprises an inlet for a second gas source and an afterburner assembly coupled to the exhaust conduit, wherein the inlet is disposed intermediate to the process chamber and an afterburner assembly, and wherein the afterburner assembly comprises means for generating a plasma within the exhaust conduit with or without introduction of a gas from the second gas source; and an optical emission spectroscopy device coupled to the exhaust conduit comprising collection optics focused within a plasma discharge region of the afterburner assembly. An endpoint detection process for an oxygen free and nitrogen free plasma process comprises monitoring an optical emission signal of an afterburner excited species in an exhaust conduit of the plasma asher apparatus. The process and apparatus can be used with carbon and/or hydrogen containing low k dielectric materials.
摘要翻译：一种用于从包括第一气体源的低k电介质的衬底去除有机物质的等离子体灰化装置; 与所述第一气体源流体连通的等离子体产生部件; 与所述等离子体产生部件流体连通的处理室; 与处理室流体连通的排气管道; 其中所述排气管道包括用于第二气体源的入口和耦合到所述排气管道的后燃烧器组件，其中所述入口设置在所述处理室和加力燃烧器组件的中间，并且其中所述后燃烧器组件包括用于在所述排气管内产生等离子体的装置具有或不从第二气体源引入气体的排气导管; 以及耦合到所述排气导管的光发射光谱装置，包括聚焦在所述后燃器组件的等离子体放电区域内的收集光学器件。用于无氧和无氮等离子体工艺的端点检测方法包括监测等离子体灰化装置的排气管道中的后燃器激发物质的光发射信号。该方法和装置可以与含有低k电介质材料的碳和/或氢一起使用。

3. 发明申请

US20100055807A1 PLASMA ASHING APPARATUS AND ENDPOINT DETECTION PROCESS 有权
标题翻译：等离子体吸附装置和端点检测过程
公开(公告)号：US20100055807A1
公开(公告)日：2010-03-04
申请号：US12552316
申请日：2009-09-02
申请人： Aseem Kumar Srivastava , Palanikumaran Sakthivel , Thomas James Buckley
发明人： Aseem Kumar Srivastava , Palanikumaran Sakthivel , Thomas James Buckley
IPC分类号： H01L21/66
CPC分类号： H01L21/67253 , G03F7/427 , H01J37/32357 , H01J37/32834 , H01J37/32935 , H01J2237/3342 , H01L21/67069
摘要： A plasma ashing apparatus for removing organic matter from a substrate including a low k dielectric, comprising a first gas source; a plasma generating component in fluid communication with the first gas source; a process chamber in fluid communication with the plasma generating component; an exhaust conduit in fluid communication with the process chamber; wherein the exhaust conduit comprises an inlet for a second gas source and an afterburner assembly coupled to the exhaust conduit, wherein the inlet is disposed intermediate to the process chamber and an afterburner assembly, and wherein the afterburner assembly comprises means for generating a plasma within the exhaust conduit with or without introduction of a gas from the second gas source; and an optical emission spectroscopy device coupled to the exhaust conduit comprising collection optics focused within a plasma discharge region of the afterburner assembly. An endpoint detection process for an oxygen free and nitrogen free plasma process comprises monitoring an optical emission signal of an afterburner excited species in an exhaust conduit of the plasma asher apparatus. The process and apparatus can be used with carbon and/or hydrogen containing low k dielectric materials.
摘要翻译：一种用于从包括第一气体源的低k电介质的衬底去除有机物质的等离子体灰化装置; 与所述第一气体源流体连通的等离子体产生部件; 与所述等离子体产生部件流体连通的处理室; 与处理室流体连通的排气管道; 其中所述排气管道包括用于第二气体源的入口和耦合到所述排气管道的后燃烧器组件，其中所述入口设置在所述处理室和加力燃烧器组件的中间，并且其中所述后燃烧器组件包括用于在所述排气管内产生等离子体的装置具有或不从第二气体源引入气体的排气导管; 以及耦合到所述排气导管的光发射光谱装置，包括聚焦在所述后燃器组件的等离子体放电区域内的收集光学器件。用于无氧和无氮等离子体工艺的端点检测方法包括监测等离子体灰化装置的排气管道中的后燃器激发物质的光发射信号。该方法和装置可以与含有低k电介质材料的碳和/或氢一起使用。

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