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    • 4. 发明授权
    • Electron beam processing
    • 电子束加工
    • US06753538B2
    • 2004-06-22
    • US10206843
    • 2002-07-27
    • Christian R. MusilJ. David Casey, Jr.Thomas J. GannonClive ChandlerXiadong Da
    • Christian R. MusilJ. David Casey, Jr.Thomas J. GannonClive ChandlerXiadong Da
    • C23C1432
    • G03F1/74H01J37/3053H01J37/3056H01J2237/31744
    • A method and apparatus for electron beam processing using an electron beam activated gas to etch or deposit material. The invention is particularly suitable for repairing defects in lithography masks. By using an electron beam in place of an ion beam, the many problems associated with ion beam mask repair, such as staining and riverbedding, are eliminated. Endpoint detection is not critical because the electron beam and gas will not etch the substrate. In one embodiment, xenon difluoride gas is activated by the electron beam to etch a tungsten, tantalum nitride, or molybdenum silicide film on a transmission or reflection mask. To prevent spontaneous etching by the etchant gas in processed sites at which the passivation layer was removed, processed sites can be re-passivated before processing additional sites.
    • 一种使用电子束活化气体蚀刻或沉积材料的电子束处理方法和装置。 本发明特别适用于修补光刻掩模中的缺陷。 通过使用电子束代替离子束,消除了与离子束掩模修复相关的许多问题,例如染色和河床。 端点检测并不重要,因为电子束和气体不会蚀刻衬底。 在一个实施方案中,氙二氟化物气体被电子束激活以蚀刻透射或反射掩模上的钨,氮化钽或硅化钼膜。 为了防止蚀刻剂气体在去除钝化层的处理部位进行自发蚀刻,可以在处理其它部位之前重新钝化加工部位。