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1. 发明申请

US20070161290A1 CONDUCTOR CONTACTS WITH ENHANCED RELIABILITY 失效
标题翻译：导线连接增强可靠性
公开(公告)号：US20070161290A1
公开(公告)日：2007-07-12
申请号：US11306668
申请日：2006-01-06
申请人： John Fitzsimmons , William Cote , Nancy Greco , Thomas Ivers , Steven Moskowitz
发明人： John Fitzsimmons , William Cote , Nancy Greco , Thomas Ivers , Steven Moskowitz
IPC分类号： H01R13/648
CPC分类号： H01L21/76826 , H01L21/76802 , H01L21/76807 , H01L21/76825 , Y10T29/49117 , Y10T29/49155 , Y10T29/49165
摘要： Methods for forming conductor contacts provide for etching through a capping layer located upon a conductor contact region within a substrate. A first pair of methods provide for etching through at least a lower thickness of the capping layer with other than a reactive ion etch to provide an exposed conductor contact region. A partially overlapping second pair of methods provides for converting at least an upper thickness of the capping layer to a converted material layer that is removed incident to providing an exposed conductor contact region. As adjunct to any of the methods, a liner layer is formed and located upon the exposed conductor contact region in absence of an undesirable reactive environment.
摘要翻译：用于形成导体触点的方法提供了通过位于衬底内的导体接触区域上的覆盖层的蚀刻。第一对方法提供用除了反应离子蚀刻之外的至少较薄厚度的覆盖层的蚀刻以提供暴露的导体接触区域。部分重叠的第二对方法提供了将覆盖层的至少上部厚度转换成被去除的转换材料层，以提供暴露的导体接触区域。作为任何方法的辅助，在没有不期望的反应性环境的情况下，形成衬里层并且位于暴露的导体接触区域上。

2. 发明授权

US07122973B1 Light-generating apparatus control system 有权
标题翻译：发光装置控制系统
公开(公告)号：US07122973B1
公开(公告)日：2006-10-17
申请号：US10746610
申请日：2003-12-23
申请人： Kevin Thomas Ivers
发明人： Kevin Thomas Ivers
IPC分类号： H05B37/00
CPC分类号： H05B39/047 , Y02B20/144
摘要： A control system for a light-generating apparatus can include a control cyclically operating a switching element in series with the circuit including the apparatus's power source and light. Upon actuation of the apparatus's switch within a specified switching interval, the control shifts to a drift mode causing the circuit to automatically pass through consecutive excitation states such that the light passes through successive levels of preferably increasing intensity at a rate independent of the switching interval over an adjustment interval of momentarily indefinite duration. Another switch actuation shifts to set mode, which stops the light at a desired intensity. The drift and set operations are repeatable. An indicator preferably enables the operator to adjust the light's intensity based on the available remaining life of the power source as differently determined for each different intensity. To facilitate interchangeability between differently sized apparatus, the control's housing can include an adjustable spacing element.
摘要翻译：用于发光装置的控制系统可以包括与包括装置的电源和光的电路串联地操作开关元件的控制。在指定的切换间隔内启动设备的开关时，控制转移到漂移模式，导致电路自动通过连续的激励状态，使得光以独立于切换间隔的速率通过优选增加的强度的连续水平一个暂时不定期的调整间隔。另一个开关致动转移到设定模式，这将以期望的强度停止光。漂移和设置操作是可重复的。指示器优选地使得操作者能够基于每个不同强度的不同确定的电源的可用剩余寿命来调整光的强度。为了促进不同尺寸的装置之间的互换性，控制器的壳体可以包括可调间隔元件。

3. 发明授权

US06500772B2 Methods and materials for depositing films on semiconductor substrates 失效
标题翻译：用于在半导体衬底上沉积膜的方法和材料
公开(公告)号：US06500772B2
公开(公告)日：2002-12-31
申请号：US09757072
申请日：2001-01-08
申请人： Ashima B. Chakravarti , Richard A. Conti , Chester Dziobkowski , Thomas Ivers , Paul Jamison , Frank Liucci
发明人： Ashima B. Chakravarti , Richard A. Conti , Chester Dziobkowski , Thomas Ivers , Paul Jamison , Frank Liucci
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , C23C16/30 , H01L21/02167 , H01L21/02222 , H01L21/02274 , H01L21/0332 , H01L21/3145 , H01L21/31608 , H01L21/3185
摘要： A method of depositing a film on a substrate, comprising placing the substrate in the presence of plasma energy, and contacting the substrate with a reactive gas component comprising a compound of the formula (R—NH)4−nSiXn, wherein R is an alkyl group, n is 1, 2, or 3, and X is selected from hydrogen or the halogens. The reactive gas composition may further comprise an oxidizer and/or a reducing agent.
摘要翻译：一种在衬底上沉积膜的方法，包括在存在等离子体能量的情况下放置衬底，并使衬底与包含式（R-NH）4-nSiXn的化合物的反应性气体组分接触，其中R是烷基基团，n为1,2或3，并且X选自氢或卤素。反应性气体组合物还可以包含氧化剂和/或还原剂。

4. 发明授权

US06335261B1 Directional CVD process with optimized etchback 有权
标题翻译：具有优化回蚀的定向CVD工艺
公开(公告)号：US06335261B1
公开(公告)日：2002-01-01
申请号：US09584355
申请日：2000-05-31
申请人： Wesley Natzle , Richard A. Conti , Laertis Economikos , Thomas Ivers , George D. Papasouliotis
发明人： Wesley Natzle , Richard A. Conti , Laertis Economikos , Thomas Ivers , George D. Papasouliotis
IPC分类号： H01L2100
CPC分类号： H01L21/76224 , C23C16/045 , H01L21/30655 , H01L21/32136 , H01L21/764
摘要： A method is described for filling a high-aspect-ratio feature, in which compatible deposition and etching steps are performed in a sequence. The feature is formed as an opening in a substrate having a surface; a fill material is deposited at the bottom of the feature and on the surface of the substrate; deposition on the surface adjacent the feature causes formation of an overhang structure partially blocking the opening. The fill material is then reacted with a reactant to form a solid reaction product having a greater specific volume than the fill material. The overhang structure is thus converted into a reaction product structure blocking the opening. The reaction product (including the reaction product structure) is then desorbed, thereby exposing unreacted fill material at the bottom of the feature. The depositing and reacting steps may be repeated, with a final depositing step to fill the feature. Each sequence of depositing, reacting and desorbing reduces the aspect ratio of the feature.
摘要翻译：描述了一种用于填充高纵横比特征的方法，其中以顺序执行相容的沉积和蚀刻步骤。该特征形成为具有表面的基板中的开口; 填充材料沉积在特征的底部和基底的表面上; 在与特征相邻的表面上的沉积导致形成部分阻挡开口的突出结构。然后将填充材料与反应物反应以形成具有比填充材料更大的比体积的固体反应产物。因此，突出结构被转化成阻塞开口的反应产物结构。然后将反应产物（包括反应产物结构）解吸，从而在特征底部暴露未反应的填充材料。沉积和反应步骤可以重复，最终沉积步骤以填补该特征。沉积，反应和解吸的每个顺序降低了特征的纵横比。

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