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1. 发明授权

US08649213B2 Multiple bit phase change memory cell 有权
标题翻译：多位相变存储单元
公开(公告)号：US08649213B2
公开(公告)日：2014-02-11
申请号：US12935656
申请日：2009-03-30
申请人： Ludovic R. A. Goux , Thomas Gille , Judit G. Lisoni , Dirk J. C. C. M. Wouters
发明人： Ludovic R. A. Goux , Thomas Gille , Judit G. Lisoni , Dirk J. C. C. M. Wouters
IPC分类号： G11C11/00
CPC分类号： H01L45/1226 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/144 , H01L45/1683
摘要： A phase change memory cell has more than one memory region each being a narrowed region of phase change memory material extending between first and second electrodes. Each of the plurality of memory regions can be programmed to be in a low resistance state or a high resistance state by applying suitable programming conditions of current and/or voltage. The resistances of the high resistance states and the programming conditions to convert the high resistance states to the low resistance state are different in each of the plurality of memory regions.
摘要翻译：相变存储单元具有多于一个存储区，每个存储区是在第一和第二电极之间延伸的相变存储材料的变窄区域。可以通过施加电流和/或电压的合适编程条件，将多个存储区域中的每一个编程为处于低电阻状态或高电阻状态。高电阻状态的电阻和将高电阻状态转换为低电阻状态的编程条件在多个存储区域中的每一个中是不同的。

2. 发明授权

US08526225B2 Non-volatile memory device 有权
标题翻译：非易失性存储器件
公开(公告)号：US08526225B2
公开(公告)日：2013-09-03
申请号：US12596721
申请日：2008-04-30
申请人： Ludovic Goux , Judit G. Lisoni Reyes , Thomas Gille , Dirk J. C. C. M. Wouters
发明人： Ludovic Goux , Judit G. Lisoni Reyes , Thomas Gille , Dirk J. C. C. M. Wouters
IPC分类号： G11C11/00
CPC分类号： H01L45/1683 , G11C13/0009 , G11C13/02 , G11C2213/15 , G11C2213/56 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/144
摘要： A memory device comprises an array of memory cells for storing data and a voltage application unit for applying voltages to the cells for writing data to the cells. Each memory cell has a first layer comprising copper in contact with a second layer comprising a chalcogenide material. The voltage application unit is arranged to write data by switching each cell between a first resistance state and a second, lower, resistance state. The voltage application unit is arranged to switch a cell to the first resistance state by applying a potential difference across the first and second layers such that the potential at the first layer is higher than the potential at the second layer by 0.5 volts or less. The voltage application unit is arranged to switch a cell to the second resistance state by applying a potential difference across the first and second layers such that the potential at the second layer is higher than the potential at the first layer by 0.5 volts or less. The current flow when switching between resistance states is less than 10 μA. The memory cells of the device can be toggled between the resistance states, and the resistance states are non-volatile.
摘要翻译：存储器件包括用于存储数据的存储器单元阵列和用于向单元施加电压以将数据写入单元的电压施加单元。每个存储单元具有包含与包含硫族化物材料的第二层接触的铜的第一层。电压施加单元被布置成通过在第一电阻状态和第二，较低电阻状态之间切换每个单元来写入数据。电压施加单元被布置成通过在第一层和第二层之间施加电位差来将单元切换到第一电阻状态，使得第一层处的电位高于第二层处的电位0.5伏或更小。电压施加单元被布置成通过施加跨越第一层和第二层的电位差使单元切换到第二电阻状态，使得第二层处的电位高于第一层的电位0.5伏或更小。在电阻状态之间切换时的电流小于10μA。器件的存储单元可以在电阻状态之间切换，并且电阻状态是非易失性的。

3. 发明申请

US20080303014A1 Vertical Phase Change Memory Cell and Methods For Manufacturing Thereof 有权
标题翻译：垂直相变记忆体及其制造方法
公开(公告)号：US20080303014A1
公开(公告)日：2008-12-11
申请号：US12158113
申请日：2006-12-12
申请人： Ludovic Raymond Andre Goux , Dirk Johan Cecil Christiaan Marie Wouters , Judit Gloria Lisoni Reyes , Thomas Gille
发明人： Ludovic Raymond Andre Goux , Dirk Johan Cecil Christiaan Marie Wouters , Judit Gloria Lisoni Reyes , Thomas Gille
IPC分类号： H01L45/00
CPC分类号： H01L27/2472 , H01L27/2445 , H01L45/06 , H01L45/1233 , H01L45/124 , H01L45/1246 , H01L45/144 , H01L45/1625 , H01L45/165 , H01L45/1666
摘要： The present invention discloses a vertical phase-change-memory (PCM) cell, comprising a stack of a bottom electrode (5) contacting a first layer of phase change material (14), a dielectric layer (12) having an opening (13), a second layer of phase change material (6) in contact with the first layer of phase change material through the opening in the dielectric layer and a top electrode (7) contacting this second layer of phase change material.
摘要翻译：本发明公开了一种垂直相变存储器（PCM）单元，其包括与第一相变材料层（14）接触的底部电极（5）的叠层，具有开口（13）的介电层（12），通过介电层中的开口与第一相变材料层接触的第二层相变材料（6）和与该第二相变材料层接触的顶部电极（7）。

4. 发明申请

US20080265237A1 Phase-Change Memory Cell Having Two Insulated Regions 有权
标题翻译：具有两个绝缘区域的相变存储单元
公开(公告)号：US20080265237A1
公开(公告)日：2008-10-30
申请号：US11914645
申请日：2006-05-18
申请人： Ludovic Goux , Dirk Wouters , Judith Lisoni , Thomas Gille
发明人： Ludovic Goux , Dirk Wouters , Judith Lisoni , Thomas Gille
IPC分类号： H01L47/00 , H01L21/00
CPC分类号： H01L45/144 , G11C13/0004 , H01L45/06 , H01L45/1226 , H01L45/148 , H01L45/1675
摘要： A phase-change-memory cell is provided which comprises two insulated regions formed in a first phase-change material connected by a region formed in a second phase-change material. The crystallization temperature of the second phase-change material is below the crystallization temperature of the first phase-change material. By locally changing the material properties using a second PCM material, which switches phase at a lower temperature, a localized “hot spot” is obtained.
摘要翻译：提供了一种相变存储单元，其包括形成在由形成在第二相变材料中的区域连接的第一相变材料中的两个绝缘区域。第二相变材料的结晶温度低于第一相变材料的结晶温度。通过使用在较低温度下切换相的第二PCM材料局部地改变材料性质，获得了局部的“热点”。

5. 发明授权

US07897952B2 Phase-change memory cell with a patterned layer 有权
标题翻译：具有图案层的相变存储单元
公开(公告)号：US07897952B2
公开(公告)日：2011-03-01
申请号：US11914638
申请日：2006-05-18
申请人： Dirk Wouters , Ludovic Goux , Judith Lisoni , Thomas Gille
发明人： Dirk Wouters , Ludovic Goux , Judith Lisoni , Thomas Gille
IPC分类号： H01L47/00 , G11C11/00
CPC分类号： H01L45/06 , G11C13/0004 , H01L45/1226 , H01L45/144 , H01L45/165 , H01L45/1675
摘要： A phase-change-material memory cell is provided. The cell comprises at least one patterned layer of a phase-change material, and is characterized in that this patterned layer comprises at least two regions having different resistivities. If the resistivity of the phase-change material is higher in a well-defined area with limited dimensions (“hot spot”) than outside this area, then, for a given current flow between the electrodes, advantageously more Joule heat will be generated within this area compared to the area of the phase-change material where the resistivity is lower.
摘要翻译：提供了相变材料存储单元。该电池包括至少一个相变材料的图案化层，其特征在于，该图案化层包括具有不同电阻率的至少两个区域。如果在具有有限尺寸（“热点”）的明确限定区域内的相变材料的电阻率高于该区域之外，则对于电极之间的给定电流，有利地将在内部产生更多的焦耳热该区域与电阻率较低的相变材料的面积相比。

6. 发明申请

US20100202193A1 NON-VOLATILE MEMORY DEVICE 有权
标题翻译：非易失性存储器件
公开(公告)号：US20100202193A1
公开(公告)日：2010-08-12
申请号：US12596721
申请日：2008-04-30
申请人： Ludovic Goux , Judit Lisoni Reyes , Thomas Gille , Dirk Wouters
发明人： Ludovic Goux , Judit Lisoni Reyes , Thomas Gille , Dirk Wouters
IPC分类号： G11C11/00 , H01L45/00 , G11C7/22
CPC分类号： H01L45/1683 , G11C13/0009 , G11C13/02 , G11C2213/15 , G11C2213/56 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/144
摘要： A memory device comprises an array of memory cells for storing data and a voltage application unit for applying voltages to the cells for writing data to the cells. Each memory cell has a first layer comprising copper in contact with a second layer comprising a chalcogenide material. The voltage application unit is arranged to write data by switching each cell between a first resistance state and a second, lower, resistance state. The voltage application unit is arranged to switch a cell to the first resistance state by applying a potential difference across the first and second layers such that the potential at the first layer is higher than the potential at the second layer by 0.5 volts or less. The voltage application unit is arranged to switch a cell to the second resistance state by applying a potential difference across the first and second layers such that the potential at the second layer is higher than the potential at the first layer by 0.5 volts or less. The current flow when switching between resistance states is less than 10 μA. The memory cells of the device can be toggled between the resistance states, and the resistance states are non-volatile.
摘要翻译：存储器件包括用于存储数据的存储器单元阵列和用于向单元施加电压以将数据写入单元的电压施加单元。每个存储单元具有包含与包含硫族化物材料的第二层接触的铜的第一层。电压施加单元被布置成通过在第一电阻状态和第二，较低电阻状态之间切换每个单元来写入数据。电压施加单元被布置成通过在第一层和第二层之间施加电位差来将单元切换到第一电阻状态，使得第一层处的电位高于第二层处的电位0.5伏或更小。电压施加单元被布置成通过施加跨越第一层和第二层的电位差使单元切换到第二电阻状态，使得第二层处的电位高于第一层的电位0.5伏或更小。在电阻状态之间切换时的电流小于10μA。器件的存储单元可以在电阻状态之间切换，并且电阻状态是非易失性的。

7. 发明申请

US20100001248A1 PHASE-CHANGE MEMORY CELL WITH A PATTERNED LAYER 有权
标题翻译：相变记忆细胞与图案层
公开(公告)号：US20100001248A1
公开(公告)日：2010-01-07
申请号：US11914638
申请日：2006-05-18
申请人： Dirk Johan Wouters , Ludovic Goux , Judith Lisoni , Thomas Gille
发明人： Dirk Johan Wouters , Ludovic Goux , Judith Lisoni , Thomas Gille
IPC分类号： H01L47/00 , H01L21/06
CPC分类号： H01L45/06 , G11C13/0004 , H01L45/1226 , H01L45/144 , H01L45/165 , H01L45/1675
摘要： A phase-change-material memory cell is provided. The cell comprises at least one patterned layer of a phase-change material, and is characterized in that this patterned layer comprises at least two regions having different resistivities. If the resistivity of the phase-change material is higher in a well-defined area with limited dimensions (“hot spot”) than outside this area, then, for a given current flow between the electrodes, advantageously more Joule heat will be generated within this area compared to the area of the phase-change material where the resistivity is lower.
摘要翻译：提供了相变材料存储单元。该电池包括至少一个相变材料的图案化层，其特征在于，该图案化层包括具有不同电阻率的至少两个区域。如果在具有有限尺寸（“热点”）的明确限定区域内的相变材料的电阻率高于该区域之外，则对于电极之间的给定电流，有利地将在内部产生更多的焦耳热该区域与电阻率较低的相变材料的面积相比。

8. 发明授权

US07728319B2 Vertical phase change memory cell and methods for manufacturing thereof 有权
标题翻译：垂直相变存储单元及其制造方法
公开(公告)号：US07728319B2
公开(公告)日：2010-06-01
申请号：US12158113
申请日：2006-12-12
申请人： Ludovic Raymond Andre Goux , Dirk Johan Cecil Christiaan Marie Wouters , Judit Gloria Lisoni Reyes , Thomas Gille
发明人： Ludovic Raymond Andre Goux , Dirk Johan Cecil Christiaan Marie Wouters , Judit Gloria Lisoni Reyes , Thomas Gille
IPC分类号： H01L47/00
CPC分类号： H01L27/2472 , H01L27/2445 , H01L45/06 , H01L45/1233 , H01L45/124 , H01L45/1246 , H01L45/144 , H01L45/1625 , H01L45/165 , H01L45/1666
摘要： The present invention discloses a vertical phase-change-memory (PCM) cell, comprising a stack of a bottom electrode (5) contacting a first layer of phase change material (14), a dielectric layer (12) having an opening (13), a second layer of phase change material (6) in contact with the first layer of phase change material through the opening in the dielectric layer and a top electrode (7) contacting this second layer of phase change material.
摘要翻译：本发明公开了一种垂直相变存储器（PCM）单元，其包括与第一相变材料层（14）接触的底部电极（5）的叠层，具有开口（13）的介电层（12），通过介电层中的开口与第一相变材料层接触的第二层相变材料（6）和与该第二相变材料层接触的顶部电极（7）。

9. 发明申请

US20120069645A1 MULTIPLE BIT PHASE CHANGE MEMORY CELL 有权
标题翻译：多位相变存储器单元
公开(公告)号：US20120069645A1
公开(公告)日：2012-03-22
申请号：US12935656
申请日：2009-03-30
申请人： Ludovic R.A. Goux , Thomas Gille , Judit G. Lisoni , Dirk J.C.C.M. Wouters
发明人： Ludovic R.A. Goux , Thomas Gille , Judit G. Lisoni , Dirk J.C.C.M. Wouters
IPC分类号： G11C11/00
CPC分类号： H01L45/1226 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/144 , H01L45/1683
摘要： A phase change memory cell has more than one memory region (14,18) each being a narrowed region of phase change memory material (2) extending between first and second electrodes (4,6). Each of the plurality of memory regions (14, 18) can be programmed to be in a low resistance state or a high resistance state by applying suitable programming conditions of current and/or voltage. The resistances of the high resistance states and the programming conditions to convert the high resistance states to the low resistance state are different in each of the plurality of memory regions.
摘要翻译：相变存储器单元具有多于一个存储区域（14,18），每个存储器区域是在第一和第二电极（4,6）之间延伸的相变存储器材料（2）的变窄区域。可以通过施加电流和/或电压的合适的编程条件，将多个存储区域（14,18）中的每一个编程为处于低电阻状态或高电阻状态。高电阻状态的电阻和将高电阻状态转换为低电阻状态的编程条件在多个存储区域中的每一个中是不同的。

10. 发明授权

US08008644B2 Phase-change memory cell having two insulated regions 有权
标题翻译：具有两个绝缘区域的相变存储单元
公开(公告)号：US08008644B2
公开(公告)日：2011-08-30
申请号：US11914645
申请日：2006-05-18
申请人： Ludovic Goux , Dirk Wouters , Judit Lisoni , Thomas Gille
发明人： Ludovic Goux , Dirk Wouters , Judit Lisoni , Thomas Gille
IPC分类号： H01L47/00
CPC分类号： H01L45/144 , G11C13/0004 , H01L45/06 , H01L45/1226 , H01L45/148 , H01L45/1675
摘要： A phase-change-memory cell is provided which comprises two insulated regions formed in a first phase-change material connected by a region formed in a second phase-change material. The crystallization temperature of the second phase-change material is below the crystallization temperature of the first phase-change material. By locally changing the material properties using a second PCM material, which switches phase at a lower temperature, a localized “hot spot” is obtained.
摘要翻译：提供了一种相变存储单元，其包括形成在由形成在第二相变材料中的区域连接的第一相变材料中的两个绝缘区域。第二相变材料的结晶温度低于第一相变材料的结晶温度。通过使用在较低温度下切换相的第二PCM材料局部地改变材料性质，获得了局部的“热点”。

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