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1. 发明授权

US5167758A Method of forming polycrystalline silicon layer on semiconductor wafer 失效
标题翻译：在半导体晶片上形成多晶硅层的方法
公开(公告)号：US5167758A
公开(公告)日：1992-12-01
申请号：US364558
申请日：1989-06-08
申请人： Yasuhiro Maeda , Takashi Yokoyama , Ichiro Hide , Takeyuki Matsuyama , Keiji Sawaya
发明人： Yasuhiro Maeda , Takashi Yokoyama , Ichiro Hide , Takeyuki Matsuyama , Keiji Sawaya
IPC分类号： B22D19/08 , C30B11/00
CPC分类号： C30B29/06 , B22D19/08 , C30B11/00
摘要： A method of forming a polycrystalline silicon layer on a semiconductor wafer is disclosed having the steps of placing the semiconductor wafers in a predetermined number of recesses formed on a mold body, then creating a mold by securing a mold cover in contact with the front surface of the mold body, rotating the mold by a rotor in the heating inert gas of a melting furnace, maintaining the wafer temperature in the range of 1300.degree. C. to 1350.degree. C., pouring heated melted silicon from an inlet opened at the center of the mold cover into a passage recessed at the center of the mold body, flowing the heated melted silicon radially by centrifugal force to fill the melted silicon in a laminated layer air gap formed between the surface of the wafer placed in the recess and the mold cover, cooling to solidify the melted silicon and obtain a product with the polycrystalline silicon layer formed from the melted silicon on the wafer, and opening the mold cover from the mold body to remove the product from the mold body. Thus, the method can readily form an accumulated layer of the thickness of 100 micron at an extremely high speed with sufficient economy.
摘要翻译：公开了一种在半导体晶片上形成多晶硅层的方法，该方法具有以下步骤：将半导体晶片放置在形成在模体上的预定数量的凹槽中，然后通过将模具盖与前表面接触而形成模具模具体，通过在熔化炉的加热惰性气体中的转子旋转模具，将晶片温度保持在1300℃至1350℃的范围内，从在中心开口的入口浇注加热的熔融硅模具盖成为在模具主体的中心凹陷的通道，通过离心力使加热的熔融硅径向流动，以将填充在位于凹槽中的晶片表面与模具盖之间的层叠气隙中填充熔融的硅冷却固化熔融的硅并获得由晶片上的熔融硅形成的多晶硅层的产品，并从模具体上打开模具盖以除去产品从模具体。因此，该方法可以以足够的经济性以极高的速度容易地形成厚度为100微米的累积层。

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