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1. 发明专利

JP2014029219A Air conditioner 有权
标题翻译：冷气机
公开(公告)号：JP2014029219A
公开(公告)日：2014-02-13
申请号：JP2011167847
申请日：2011-07-30
申请人： Takaya Watanabe , 隆彌渡邊
发明人： WATANABE TAKAYA
IPC分类号： F24F1/00 , B60H1/32 , F24F5/00 , F25B21/02 , H01L37/00
摘要： PROBLEM TO BE SOLVED: To arrange a Thomson element on the inner surface of a wall or a window of a building or a moving vehicle.SOLUTION: A Thomson element made up of a metallic thin film, a semiconductor film, and a metallic film is formed by growing a laminated film made up of a metal and an n-type semiconductor on a wall or window of a building or a moving vehicle, and a current is passed through the Thomson element so that the generation or absorption of heat is caused by a Seebeck coefficient difference. The Thomson element can constitute an air conditioner made up of transparent metallic films and an opaque semiconductor film, or opaque metallic films and a transparent semiconductor film, or opaque metallic films and an opaque semiconductor film. The thin films for forming the Thomson element can be formed in large quantity on a large area in a short time at a dramatically reduced production cost, and thus its industrial value is extremely high.
摘要翻译：要解决的问题：将汤姆逊元件布置在建筑物或移动车辆的墙壁或窗户的内表面上。解决方案：由金属薄膜，半导体膜和金属膜构成的汤姆逊元件是通过在建筑物或移动车辆的墙壁或窗户上生长由金属和n型半导体构成的层压膜形成，并且电流通过汤姆逊元件，使得产生或吸收热量由塞贝克系数差。汤姆逊元件可以构成由透明金属膜和不透明半导体膜或不透明金属膜和透明半导体膜或不透明金属膜和不透明半导体膜构成的空调。用于形成汤姆逊元件的薄膜可以在大幅度地在短时间内以大幅度的生产成本大量地形成，因此其工业价值非常高。

2. 发明专利

JP2013115398A Thermoelectric conversion device 有权
标题翻译：热电转换装置
公开(公告)号：JP2013115398A
公开(公告)日：2013-06-10
申请号：JP2011263272
申请日：2011-12-01
申请人： Takaya Watanabe , 隆彌渡邊
发明人： WATANABE TAKAYA
IPC分类号： H01L35/32 , F25B21/02 , F25B21/04
摘要： PROBLEM TO BE SOLVED: To dispel the disadvantage of a Peltier element, utilizing the heat by radiation arising from any object including the wall and window of a building or a mobile vehicle, that cooling and heating are combined.SOLUTION: In the thermoelectric conversion device, the heating part of a Thomson element consisting of a p-type semiconductor is connected with the heating part of a Thomson element consisting of an n-type semiconductor. Alternatively, the cooling part of a Thomson element consisting of a p-type semiconductor is connected with the cooling part of a Thomson element consisting of an n-type semiconductor. High-speed movement of a heat flow can be achieved by connecting the cooling part of a Thomson element consisting of a p-type semiconductor with the cooling part of a Thomson element consisting of an n-type semiconductor so that ultrasonic waves are superimposed on the boundary surface of temperature gradient of a heat flow at a heating part occurring in the Thomson element.
摘要翻译：要解决的问题：为了消除帕尔贴元件的缺点，利用由包括建筑物或移动车辆的墙壁和窗户的任何物体产生的辐射的热量，组合冷却和加热。解决方案：在热电转换装置中，由p型半导体构成的Thomson元件的加热部分与由n型半导体组成的Thomson元件的加热部分连接。或者，由p型半导体构成的汤姆逊元件的冷却部分与由n型半导体组成的汤姆逊元件的冷却部分连接。可以通过将由p型半导体组成的汤姆逊元件的冷却部件与由n型半导体构成的汤姆逊元件的冷却部分连接，从而将超声波叠加在在汤姆逊元件中发生的加热部分的热流的温度梯度的边界面。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2010060405A Saw chirp z transducer 有权
标题翻译： SAW CHIRP Z传感器
公开(公告)号：JP2010060405A
公开(公告)日：2010-03-18
申请号：JP2008225614
申请日：2008-09-03
申请人： Takaya Watanabe , 隆彌渡邊
发明人： WATANABE TAKAYA
IPC分类号： G01S7/285 , H03H9/44
摘要： PROBLEM TO BE SOLVED: To provide an SAW chirp Z transducer usable in a mobile communication field. SOLUTION: In the SAW chirp Z transducer, a down-chirp SAW distribution-type delay line functioning as a correlator is disposed at one main face of a piezoelectric substrate and two up-chirp SAW distribution-type delay lines functioning as a chirp signal generating distribution-type delay line is disposed at another main face, and the respective output signals from the SAW correlator and the SAW distribution-type delay lines are mixed into a mixer, thereby constructing the SAW chirp Z transducer. The SAW chirp Z transducer is not limited to radar field, and FDM/TDM conversion by chirp signal treatment can be applied to signal treatment and positioning from a large number of terminal stations such as satellite communication and wireless base station, therefore, the industrial value is very high. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供可用于移动通信领域中的SAW啁啾Z传感器。解决方案：在SAW啁啾Z传感器中，用作相关器的下啁啾SAW分布型延迟线设置在压电基板的一个主面上，并且两个啁啾SAW分布型延迟线用作啁啾信号发生分配型延迟线设置在另一个主面上，并且将来自SAW相关器和SAW分布型延迟线的各个输出信号混合到混频器中，从而构成SAW啁啾Z换能器。 SAW啁啾Z传感器不限于雷达场，通过啁啾信号处理的FDM / TDM转换可以应用于卫星通信和无线基站等大量终端的信号处理和定位，因此工业价值非常高版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2009296192A Saw convolver device 有权
标题翻译： SAW CONVOLVER设备
公开(公告)号：JP2009296192A
公开(公告)日：2009-12-17
申请号：JP2008146438
申请日：2008-06-04
申请人： Takaya Watanabe , 隆彌渡邊
发明人： WATANABE TAKAYA
IPC分类号： H03H9/72 , H03H9/25
摘要： PROBLEM TO BE SOLVED: To achieve a long-time signal processing time by combining a plurality of SAW convolvers short in signal processing time.
SOLUTION: Fig.1 is a basic configuration diagram of this SAW convolver device, and an output part 112 of an SAW convolver element 102 formed on the front surface of a piezoelectric plate 100 is electrically connected to an end of a piezoelectric substrate. A terminal 116 is an output terminal of an SAW convolver element 103 formed on the back surface 101 of the piezoelectric substrate. Terminals 115 and 116 being outputs from the two SAW convolver elements are connected to an adder 120 to provide an output 121 of a SAW convolver. The SAW convolver device can provide an SAW convolver device having a desired processing time by arranging the convolver elements each having the same processing time and two sets of delay lines on both front and back surfaces of the piezoelectric substrate, and processing the outputs of the respective SAW convolver elements by the adder, and its industrial value is extremely high.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：通过组合信号处理时间短的多个SAW卷积器来实现长时间的信号处理时间。解决方案：图1是该SAW卷积器装置的基本结构图，形成在压电板100的前表面上的SAW卷积器元件102的输出部分112电连接到压电基片的一端。端子116是形成在压电基板的背面101上的SAW卷积器元件103的输出端子。来自两个SAW卷积器元件的端子115和116被连接到加法器120，以提供SAW卷积器的输出121。 SAW卷积器装置可以通过在压电基板的前表面和后表面上布置具有相同处理时间和两组延迟线的卷积器元件来提供具有期望的处理时间的SAW卷积器装置，并且处理各压电基板的输出由SAW加法器组成的Convolver元件，其工业价值极高。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2008089939A Thermo-accoustic switch 有权
标题翻译：热电开关
公开(公告)号：JP2008089939A
公开(公告)日：2008-04-17
申请号：JP2006270196
申请日：2006-09-30
申请人： Takaya Watanabe , 渡邊隆彌
发明人： WATANABE TAKAYA
IPC分类号： G02F1/125 , G02F1/01
摘要： PROBLEM TO BE SOLVED: To provide an optical switch using the thermo-optical effect of a light wave circuit in optical communication/optical information processing, especially a thermo-accoustic switch operating at ultrahigh speed.
SOLUTION: A thermo-optical phase shifter is mounted on an arm waveguide 104 of a Mach-Zehnder interferometer on a silicon substrate 101 to induce a thermo-optical effect. A ZnO film 105 which is a piezo-electric thin film is formed on the arm waveguide 104 to radiate an ultrasonic wave in a quartz-based optical fiber 102 which is a sound medium. The ZnO film was formed after forming a Cr 400 Å+ gold electrode 2,000 Å on the surface of the quartz-based optical fiber 102. ZnO film 105 is formed by ECR sputtering method. The switching speed of 9 ns is observed from the refractivity changes produced in the core of the arm waveguide 104 due to the ultrasonic heat transmission by the thermo-accoustic phenomenon produced when the longitudinal ultrasonic wave (at a propagating speed of 5,968 m/s) propagates inside the quartz-based optical fiber.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种在光通信/光信息处理中使用光波电路的热光效应的光开关，特别是以超高速操作的热声开关。解决方案：热电相移器安装在硅衬底101上的马赫 - 策德尔干涉仪的臂波导104上以引起热光效应。作为压电薄膜的ZnO膜105形成在臂波导104上，以在作为声音介质的石英系光纤102中照射超声波。在石英基光纤102的表面上形成Cr + 400 +金电极2000之后形成ZnO膜。通过ECR溅射法形成ZnO膜105。由于当纵向超声波（传播速度为5,968m / s）时产生的热声现象的超声波传热，从臂波导104的芯部产生的折射率变化观察到9ns的切换速度，在石英基光纤内传播。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2007210862A Quartz epitaxial substrate 有权
标题翻译： QUARTZ外壳基板
公开(公告)号：JP2007210862A
公开(公告)日：2007-08-23
申请号：JP2006034649
申请日：2006-02-13
申请人： Takaya Watanabe , 渡邊隆彌
发明人： WATANABE TAKAYA
IPC分类号： C30B29/18 , C23C16/42 , C23C16/48 , C30B25/20 , H01L41/18 , H01L41/316 , H01L41/319 , H01L41/39 , H03H3/02 , H03H9/17 , H03H9/19
摘要： PROBLEM TO BE SOLVED: To solve a defect wherein a cut angle can not be corrected and to solve a problem of residual stress caused by the difference of a coefficient of thermal expansion between a sapphire substrate and a quartz thin film in a heteroepitaxial quartz thin film obtained by subjecting a quartz to heteroepitaxial growth on the sapphire substrate. SOLUTION: The quartz epitaxial substrate for an AT cut quartz oscillator and a surface acoustic wave device excellent in long-term stability is provided as follows. A photo-CVD device is used for manufacturing a homoepitaxial film on an arbitrarily inclined quartz substrate having an off-angle of 2°-4° at a low temperature of ≤500°C, and a growth direction is controlled by subjecting the homoepitaxial quartz to crystal growth on the quartz substrate in a state of non-strain processing, and the residual stress between the quartz substrate and the quartz thin film is not generated. A large diameter quartz wafer of Φ4 inch is used as the quartz epitaxial substrate. Many patterns are formed on the Φ4 inch quartz wafer by a batch treatment, then the wafer is divided into individual chips by dicing, then the chips are collectively treated. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了解决不能校正切割角度的缺陷，并且解决由异质外延中的蓝宝石基板和石英薄膜之间的热膨胀系数的差引起的残余应力的问题通过使石英在蓝宝石基板上进行异质外延生长而获得的石英薄膜。解决方案：用于AT切割石英振荡器的石英外延基板和长期稳定性优异的表面声波装置如下。光CVD装置用于在低于500℃的低温下，在偏角为2°-4°的任意倾斜的石英基板上制造同质外延膜，通过对同质外延石英在非应变处理的状态下在石英基板上的晶体生长，并且不会产生石英基板和石英薄膜之间的残余应力。使用Φ4英寸的大直径石英晶片作为石英外延基板。通过间歇处理在Φ4英寸石英晶片上形成许多图案，然后通过切割将晶片分成单独的芯片，然后将芯片集中处理。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2003017969A Surface acoustic wave device 审中-公开
标题翻译：表面声波设备
公开(公告)号：JP2003017969A
公开(公告)日：2003-01-17
申请号：JP2001232844
申请日：2001-06-27
申请人： Takaya Watanabe , 渡邊隆彌
发明人： WATANABE TAKAYA
IPC分类号： H03H9/145 , H03H9/25
摘要： PROBLEM TO BE SOLVED: To provide a new method for optimizing the frequency stability.
SOLUTION: An air gap is provided on a crystal substrate 401 and an IDT 402 to stimulate a leakage surface acoustic wave is provided. In order to support the IDT in a bridge form mechanically and spatially, the IDT is coated with an insulating thin film. No mass loading is applied to the leakage surface acoustic wave in this state. Since the spatial gap between the IDT and the crystal plate is 0.1 μ to several microns, no effect of the spatial gap is given to the stimulation efficiency. Eliminating the effect of the film thickness in this way can obtain an excellent ternary transmitter characteristic of the substantial leakage surface acoustic wave.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种优化频率稳定性的新方法。解决方案：在晶体基板401上提供气隙，并且提供IDT 402以刺激泄漏声波。为了以机械和空间的方式支撑IDT，IDT涂有绝缘薄膜。在这种状态下，没有质量负荷施加到泄漏表面声波。由于IDT和晶体板之间的空间间隙为0.1微米至几微米，因此不会对刺激效率产生空间间隙的影响。以这种方式消除膜厚度的影响可以获得显着的泄漏表面声波的优良的三元发射器特性。

8. 发明专利

JP2014096395A Thermoelectric converter 有权
标题翻译：热电转换装置
公开(公告)号：JP2014096395A
公开(公告)日：2014-05-22
申请号：JP2011282500
申请日：2011-12-23
申请人： Takaya Watanabe , 隆彌渡邊
发明人： WATANABE TAKAYA
IPC分类号： H01L35/32 , F25B21/02 , H01L23/38
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To obtain a thermoelectric conversion device capable of gaining very large thermoelectric conversion energy comparable to the average irradiation power of sunlight.SOLUTION: In a thermoelectric conversion device, the heat generating part of a nano-junction Thomson element composed of a p-type semiconductor is connected with the heat generating part of a nano-junction Thomson element composed of an n-type semiconductor, and two nano-junction Thomson elements are connected, respectively, with an independent DC power supply. The heat absorbing part of a nano-junction Thomson element composed of a p-type semiconductor is connected with the heat absorbing part of a nano-junction Thomson element composed of an n-type semiconductor, and two nano-junction Thomson elements are connected, respectively, with an independent DC power supply. The thermoelectric conversion device can be integrated as a nano-junction Thomson element, and can gain very large thermoelectric conversion energy comparable to the average irradiation power of sunlight, and thereby industrial value of which is extremely high.
摘要翻译：要解决的问题：获得能够获得与阳光的平均照射功率相当的非常大的热电转换能量的热电转换装置。解决方案：在热电转换装置中，纳米结Thomson元件的发热部分由 p型半导体与由n型半导体构成的纳米结Thomson元件的发热部分连接，并且两个纳米结Thomson元件分别连接有独立的直流电源。由p型半导体构成的纳米结Thomson元件的吸热部分与由n型半导体组成的纳米结Thomson元件的吸热部分连接，并连接两个纳米结Thomson元件，分别具有独立的直流电源。该热电转换元件可以集成为纳米结Thomson元件，并可获得与太阳光的平均照射功率相当的非常大的热电转换能量，从而其工业价值非常高。

9. 发明专利

JP2014029892A Air conditioner 有权
标题翻译：冷气机
公开(公告)号：JP2014029892A
公开(公告)日：2014-02-13
申请号：JP2011086983
申请日：2011-04-11
申请人： Takaya Watanabe , 隆彌渡邊
发明人： WATANABE TAKAYA
IPC分类号： H01L35/32 , H01L35/22 , H01L35/30
摘要： PROBLEM TO BE SOLVED: To arrange a Thomson element on the inner surface of the wall or window of a building or a mobile vehicle.SOLUTION: In the air conditioner utilizing the heat generated by radiation on the wall or window of a building or a mobile vehicle, copper ultrafine particles as a transparent metal, and ultrafine particles composed of a tin oxide or an indium oxide as an n-type semiconductor are deposited on the inner surface of the wall or window. At least one Thomson element consisting of metal+n-type semiconductor+metal is placed in a polymer film, so as to express heat absorption or heat generation due to difference of thermoelectric power (Seebeck effect) in the direction of current flow caused by the voltage application direction of the Thomson element. Since heat absorption or heat generation is expressed in a short time while reducing the manufacturing cost drastically, its industrial value is extremely high.
摘要翻译：要解决的问题：将汤姆逊元件布置在建筑物或移动车辆的墙壁或窗户的内表面上。解决方案：在利用辐射产生的热量的建筑物或移动车辆的墙壁或窗户上的空调载体，作为透明金属的铜超微粒子，以及作为n型半导体的由氧化锡或氧化铟构成的超微粒子沉积在壁或窗的内表面上。由金属+ n型半导体+金属构成的至少一种汤姆逊元件被放置在聚合物膜中，以便由于热电功率（塞贝克效应）在由汤姆逊元件的施加电压方向。由于在短时间内表现了吸热或发热，而且显着降低了制造成本，其工业价值非常高。

10. 发明专利

JP2014029218A Air conditioner 有权
标题翻译：冷气机
公开(公告)号：JP2014029218A
公开(公告)日：2014-02-13
申请号：JP2011114013
申请日：2011-05-20
申请人： Takaya Watanabe , 隆彌渡邊
发明人： WATANABE TAKAYA
IPC分类号： F24F1/00 , C01B31/02 , H01L37/00
摘要： PROBLEM TO BE SOLVED: To arrange a Thomson element on a wall or a window of a building or a moving vehicle.SOLUTION: In an air conditioner using radiant heat generated on a wall or a window of a building or a moving vehicle, a Thomson element made up of carbon nanotube structure cells, a degenerate semiconductor wafer, and carbon nanotube structure cells is arranged on the wall or the window so that the generation or absorption of heat is caused by a Seebeck coefficient difference in a current flow direction depending on a voltage application direction of the Thomson element. The air conditioner can be produced in a short time at a dramatically reduced production cost, and thus its industrial value is extremely high.
摘要翻译：要解决的问题：将汤姆逊元件布置在建筑物或移动车辆的墙壁或窗户上。解决方案：在使用在建筑物或移动车辆的墙壁或窗户上产生的辐射热的空调中，汤姆森由碳纳米管结构单元构成的元件，退化半导体晶片和碳纳米管结构单元布置在壁或窗口上，使得热量的产生或吸收由当前流动方向上的塞贝克系数差引起，这取决于汤姆逊元件的施加电压方向。空调可以在短时间内以显着降低的生产成本生产，因此其工业价值非常高。

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