专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120286900A1 TUNABLE FILTER 有权
标题翻译： TUNABLE过滤器
公开(公告)号：US20120286900A1
公开(公告)日：2012-11-15
申请号：US13555462
申请日：2012-07-23
申请人： Michio KADOTA , Hideaki KOBAYASHI , Takashi OGAMI
发明人： Michio KADOTA , Hideaki KOBAYASHI , Takashi OGAMI
IPC分类号： H03H9/54 , H03H9/64
CPC分类号： H03H9/6403 , H03H7/12 , H03H7/1708 , H03H7/175 , H03H7/38 , H03H9/02559 , H03H9/0542 , H03H9/542 , H03H9/6483 , H03H2007/386 , H03H2009/02204
摘要： A tunable filter that is capable of magnifying a pass band width or increasing a frequency variable amount includes a resonator circuit portion provided in at least one of a series arm connecting an input terminal and an output terminal to each other and a parallel arm connecting the series arm and a ground potential to each other, a first variable capacitor is connected in series to the resonator circuit portion and a second variable capacitor is connected in parallel to the resonator circuit portion. The resonator circuit portion includes a piezoelectric substrate including LiNbO3 or LiTaO3, an elastic wave resonator including an electrode located on the piezoelectric substrate, and a bandwidth extending inductance Lx, Lx connected to the elastic wave resonator.
摘要翻译：能够放大通带宽度或增加频率可变量的可调谐滤波器包括设置在将输入端子和输出端子彼此连接的串联臂中的至少一个中的谐振器电路部分和连接该串联的并联臂臂和接地电位，第一可变电容器串联连接到谐振器电路部分，并且第二可变电容器并联连接到谐振器电路部分。谐振器电路部分包括包含LiNbO 3或LiTaO 3的压电基片，包括位于压电基片上的电极的弹性波谐振器和连接到弹性波谐振器的带宽延伸电感Lx，Lx。

2. 发明授权

US08552818B2 Tunable filter 有权
标题翻译：可调滤波器
公开(公告)号：US08552818B2
公开(公告)日：2013-10-08
申请号：US13555462
申请日：2012-07-23
申请人： Michio Kadota , Hideaki Kobayashi , Takashi Ogami
发明人： Michio Kadota , Hideaki Kobayashi , Takashi Ogami
IPC分类号： H03H9/54 , H03H9/64
CPC分类号： H03H9/6403 , H03H7/12 , H03H7/1708 , H03H7/175 , H03H7/38 , H03H9/02559 , H03H9/0542 , H03H9/542 , H03H9/6483 , H03H2007/386 , H03H2009/02204
摘要： A tunable filter that is capable of magnifying a pass band width or increasing a frequency variable amount includes a resonator circuit portion provided in at least one of a series arm connecting an input terminal and an output terminal to each other and a parallel arm connecting the series arm and a ground potential to each other, a first variable capacitor is connected in series to the resonator circuit portion and a second variable capacitor is connected in parallel to the resonator circuit portion. The resonator circuit portion includes a piezoelectric substrate including LiNbO3 or LiTaO3, an elastic wave resonator including an electrode located on the piezoelectric substrate, and a bandwidth extending inductance Lx, Lx connected to the elastic wave resonator.
摘要翻译：能够放大通带宽度或增加频率可变量的可调谐滤波器包括设置在将输入端子和输出端子彼此连接的串联臂中的至少一个中的谐振器电路部分和连接该串联的并联臂臂和接地电位，第一可变电容器串联连接到谐振器电路部分，并且第二可变电容器并联连接到谐振器电路部分。谐振器电路部分包括包括LiNbO 3或LiTaO 3的压电衬底，包括位于压电衬底上的电极的弹性波谐振器和连接到弹性波谐振器的带宽扩展电感Lx，Lx。

3. 发明申请

US20080179989A1 LAMB WAVE DEVICE 有权
标题翻译：拉姆波设备
公开(公告)号：US20080179989A1
公开(公告)日：2008-07-31
申请号：US12099839
申请日：2008-04-09
申请人： Takashi OGAMI , Kansho YAMAMOTO , Michio KADOTA
发明人： Takashi OGAMI , Kansho YAMAMOTO , Michio KADOTA
IPC分类号： H03H9/25
CPC分类号： H03H9/02559 , H03H3/10 , H03H9/02228
摘要： A Lamb wave device includes a base substrate, a piezoelectric thin film which is provided on the base substrate and which has a floating portion floating above the base substrate, the floating portion having a first surface facing the base substrate and a second surface opposite to the first surface, and an IDT electrode disposed on at least one of the first and the second surfaces of the piezoelectric thin film. The piezoelectric thin film is made of LiTaO3 or LiNbO3, and the c-axis of the piezoelectric thin film is set in approximately the same direction as that of a line substantially perpendicular to the first and the second surfaces of the piezoelectric thin film, and the crystal structure of the piezoelectric thin film is a rotation twin crystal having the c-axis functioning as the rotation axis.
摘要翻译：兰姆波装置包括基底基板和压电薄膜，其设置在基底基板上并具有浮置在基底基板上方的浮动部分，浮动部分具有面向基底基板的第一表面和与基底基板相对的第二表面第一表面和设置在压电薄膜的第一表面和第二表面中的至少一个表面上的IDT电极。压电薄膜由LiTaO 3或LiNbO 3 3制成，并且压电薄膜的c轴被设定为与实质上相当的线的大致相同的方向垂直于压电薄膜的第一表面和第二表面，并且压电薄膜的晶体结构是具有用作旋转轴的c轴的旋转双晶体。

4. 发明授权

US6056834A Magnesium alloy and method for production thereof 失效
标题翻译：镁合金及其制造方法
公开(公告)号：US6056834A
公开(公告)日：2000-05-02
申请号：US101346
申请日：1998-06-30
申请人： Kohei Kubota , Takashi Ogami , Tsutomu Sato , Koichi Sato , Mitsuharu Hoshiya , Yoichi Nosaka
发明人： Kohei Kubota , Takashi Ogami , Tsutomu Sato , Koichi Sato , Mitsuharu Hoshiya , Yoichi Nosaka
IPC分类号： C22C1/02 , C22C1/03 , C22C23/02 , G01N25/06 , C22F1/06
CPC分类号： C22C1/02 , C22C1/03 , C22C23/02
摘要： A sample is taken out of a molten magnesium alloy, the cooling curve of the sample during solidification is measured, the content of the aluminum component in the sample is determined by the use of the crystallization temperature of a phase appearing in the cooling curve, together with cooling curves, and if the results of bath analysis show the components to deviate from the standard values and target values, an aluminum-manganese master alloy, aluminum or magnesium is added to the molten magnesium alloy to adjust the components to an appropriate amount of aluminum or an appropriate iron/manganese ratio, whereby a magnesium alloy is produced.
摘要翻译： PCT No.PCT / JP97 / 04284 Sec。 371日期1998年6月30日第 102（e）1998年6月30日PCT PCT日期为1997年11月15日从熔融镁合金中取出样品，测量固化时样品的冷却曲线，样品中铝成分的含量由使用冷却曲线中出现的相的结晶温度以及冷却曲线，如果浴液分析结果显示组分偏离标准值和目标值，则铝锰母合金，铝或镁加入到熔融镁合金中以将组分调节至合适量的铝或适当的铁/锰比，由此生产镁合金。

5. 发明授权

US07535152B2 Lamb wave device 有权
标题翻译：兰波装置
公开(公告)号：US07535152B2
公开(公告)日：2009-05-19
申请号：US12099839
申请日：2008-04-09
申请人： Takashi Ogami , Kansho Yamamoto , Michio Kadota
发明人： Takashi Ogami , Kansho Yamamoto , Michio Kadota
IPC分类号： H03H9/25
CPC分类号： H03H9/02559 , H03H3/10 , H03H9/02228
摘要： A Lamb wave device includes a base substrate, a piezoelectric thin film which is provided on the base substrate and which has a floating portion floating above the base substrate, the floating portion having a first surface facing the base substrate and a second surface opposite to the first surface, and an IDT electrode disposed on at least one of the first and the second surfaces of the piezoelectric thin film. The piezoelectric thin film is made of LiTaO3 or LiNbO3, and the c-axis of the piezoelectric thin film is set in approximately the same direction as that of a line substantially perpendicular to the first and the second surfaces of the piezoelectric thin film, and the crystal structure of the piezoelectric thin film is a rotation twin crystal having the c-axis functioning as the rotation axis.
摘要翻译：兰姆波装置包括基底基板和压电薄膜，其设置在基底基板上并具有浮置在基底基板上方的浮动部分，浮动部分具有面向基底基板的第一表面和与基底基板相对的第二表面第一表面和设置在压电薄膜的第一表面和第二表面中的至少一个表面上的IDT电极。压电薄膜由LiTaO 3或LiNbO 3构成，压电薄膜的c轴设定成与基本上垂直于压电薄膜的第一和第二表面的线大致相同的方向，并且压电薄膜的晶体结构是具有作为旋转轴线的c轴的旋转双晶体。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式