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    • 6. 发明申请
    • METALLIC SILICIDE FORMING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    • 金属硅化物形成方法和制造半导体器件的方法
    • US20080176399A1
    • 2008-07-24
    • US11671589
    • 2007-02-06
    • Takahiro KatagiriYasunori Sogoh
    • Takahiro KatagiriYasunori Sogoh
    • H01L21/44
    • H01L21/28518H01L21/28052H01L29/665H01L29/6659H01L29/7833
    • A metallic silicide forms method of forming a metallic silicide layer on a semiconductor region containing silicon. The method includes the steps of: forming a first metal layer containing a first metal on the semiconductor region; forming a second metal layer containing a second metal on the semiconductor region to cover the first metal layer formed in the step of forming a first metal layer; and siliciding the semiconductor region with at least one of the first metal layer and the second metal layer by performing a heat treatment for the semiconductor region in which the second metal layer is formed to cover the first metal layer in the step of forming a second metal layer, forming the metallic silicide layer. The first metal layer is formed at a first temperature to be silicided. The second metal layer is formed at a second temperature lower than the first temperature.
    • 金属硅化物形成在含硅的半导体区域上形成金属硅化物层的方法。 该方法包括以下步骤:在半导体区域上形成含有第一金属的第一金属层; 在半导体区域上形成含有第二金属的第二金属层,以覆盖在形成第一金属层的步骤中形成的第一金属层; 以及通过在形成第二金属的步骤中对形成有第二金属层以覆盖第一金属层的半导体区进行热处理,使半导体区域与第一金属层和第二金属层中的至少一个硅化, 层,形成金属硅化物层。 在第一温度下形成第一金属层以进行硅化处理。 第二金属层在比第一温度低的第二温度下形成。