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    • 4. 发明授权
    • Ferroelectric memory
    • 铁电存储器
    • US06717198B2
    • 2004-04-06
    • US10253524
    • 2002-09-25
    • Takafumi YoshikawaTakumi Mikawa
    • Takafumi YoshikawaTakumi Mikawa
    • H01L2976
    • H01L27/11502H01L27/11507H01L28/55
    • A first insulating hydrogen barrier film is filled between lower electrodes of some ferroelectric capacitors arranged along one direction out of a word line direction and a bit line direction among a plurality of ferroelectric capacitors included in a ferroelectric memory of this invention. A common capacitor dielectric film commonly used by the some ferroelectric capacitors arranged along the one direction is formed on the lower electrodes of the some ferroelectric capacitors arranged along the one direction and on the first insulating hydrogen barrier film. A common upper electrode commonly used by the some ferroelectric capacitors arranged along the one direction is formed on the common capacitor dielectric film. A second insulating hydrogen barrier film is formed so as to cover the common upper electrode.
    • 第一绝缘氢阻挡膜被填充在本发明的强电介质存储器中所包含的多个铁电电容器之中的沿着字线方向的一个方向排列的一些铁电电容器的下电极和位线方向之间。 在沿着一个方向布置的一些铁电电容器的下电极和第一绝缘氢阻挡膜上形成沿着一个方向布置的一些铁电电容器通常使用的公共电容器电介质膜。 在公共电容器电介质膜上形成沿着一个方向布置的一些铁电电容器通常使用的公共上电极。 形成第二绝缘氢阻挡膜以覆盖公共上电极。
    • 6. 发明授权
    • Ferroelectric memory and method for fabricating the same
    • 铁电存储器及其制造方法
    • US06794199B2
    • 2004-09-21
    • US10750862
    • 2004-01-05
    • Takafumi YoshikawaTakumi Mikawa
    • Takafumi YoshikawaTakumi Mikawa
    • H01L2100
    • H01L27/11502H01L27/11507H01L28/55
    • A first insulating hydrogen barrier film is filled between lower electrodes of some ferroelectric capacitors arranged along one direction out of a word line direction and a bit line direction among a plurality of ferroelectric capacitors included in a ferroelectric memory of this invention. A common capacitor dielectric film commonly used by the some ferroelectric capacitors arranged along the one direction is formed on the lower electrodes of the some ferroelectric capacitors arranged along the one direction and on the first insulating hydrogen barrier film. A common upper electrode commonly used by the some ferroelectric capacitors arranged along the one direction is formed on the common capacitor dielectric film. A second insulating hydrogen barrier film is formed so as to cover the common upper electrode.
    • 第一绝缘氢阻挡膜被填充在本发明的强电介质存储器中所包含的多个铁电电容器之中的沿着字线方向的一个方向排列的一些铁电电容器的下电极和位线方向之间。 在沿着一个方向布置的一些铁电电容器的下电极和第一绝缘氢阻挡膜上形成沿着一个方向布置的一些铁电电容器通常使用的公共电容器电介质膜。 在公共电容器电介质膜上形成沿着一个方向布置的一些铁电电容器通常使用的公共上电极。 形成第二绝缘氢阻挡膜以覆盖公共上电极。