专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06204126B1 Method to fabricate a new structure with multi-self-aligned for split-gate flash 有权
标题翻译：用于分离栅闪光的多自对准制造新结构的方法
公开(公告)号：US06204126B1
公开(公告)日：2001-03-20
申请号：US09506930
申请日：2000-02-18
申请人： Chia-Ta Hsieh , Tai-Fen Lin , Wen-Ting Chu , Chuang-Ke Yeh , Hung-Cheng Sung , Di-Son Kuo
发明人： Chia-Ta Hsieh , Tai-Fen Lin , Wen-Ting Chu , Chuang-Ke Yeh , Hung-Cheng Sung , Di-Son Kuo
IPC分类号： H01L21336
CPC分类号： H01L27/11521 , H01L27/115 , H01L29/42324 , H01L29/7885
摘要： A method is disclosed for forming a split-gate flash memory cell where the floating gate of the cell is self-aligned to isolation, to source and to word line. This multi-self-aligned structure, which provides the maximum shrinkage of the cell that is possible, is also disclosed. The multi-self-alignment is accomplished by first defining the floating gate at the same time the trench isolation is formed, and then self-aligning the source to the floating gate by using a nitride layer as a hard mask in place of the traditional polyoxide, and finally forming a polysilicon spacer to align the word line to the floating gate. Furthermore, a thin floating gate is used to form a thin and sharp poly tip through the use of a “smiling effect” to advantage. The tip substantially decreases the coupling ratio of the floating gate to the word line for fast erasing speed, while at the same time increasing the coupling of the source to the floating gate with the attendant increase in the programming speed of the split gate flash memory cell.
摘要翻译：公开了一种用于形成分离栅闪存单元的方法，其中单元的浮置栅极自对准到隔离，源极和字线。还公开了提供可能的电池的最大收缩率的多自对准结构。通过首先在形成沟槽隔离的同时首先定义浮栅，然后通过使用氮化物层作为硬掩模来代替传统的多晶氧体来将源自对准到浮栅来实现多自对准，并最终形成多晶硅间隔物以将字线对准浮动栅极。此外，通过使用“微笑效果”，薄的浮动门用于形成薄而尖的多头尖端。尖端大大降低了浮动栅极与字线的耦合比，以实现快速擦除速度，同时增加了源极与浮栅的耦合，伴随着分流栅闪存单元的编程速度的增加。

2. 发明授权

US06479859B2 Split gate flash memory with multiple self-alignments 有权
标题翻译：分离门闪存具有多个自对准
公开(公告)号：US06479859B2
公开(公告)日：2002-11-12
申请号：US09777303
申请日：2001-02-06
申请人： Chia-Ta Hsieh , Tai-Fen Lin , Wen-Ting Chu , Chuang-Ke Yeh , Hung-Cheng Sung , Di-Son Kuo
发明人： Chia-Ta Hsieh , Tai-Fen Lin , Wen-Ting Chu , Chuang-Ke Yeh , Hung-Cheng Sung , Di-Son Kuo
IPC分类号： H01L29788
CPC分类号： H01L27/11521 , H01L27/115 , H01L29/42324 , H01L29/7885
摘要： A method is disclosed for forming a split-gate flash memory cell where the floating gate of the cell is self-aligned to isolation, to source and to word line. This multi-self-aligned structure, which provides the maximum shrinkage of the cell that is possible, is also disclosed. The multi-self-alignment is accomplished by first defining the floating gate at the same time the trench isolation is formed, and then self-aligning the source to the floating gate by using a nitride layer as a hard mask in place of the traditional polyoxide, and finally forming a polysilicon spacer to align the word line to the floating gate. Furthermore, a thin floating gate is used to form a thin and sharp poly tip through the use of a “smiling effect” to advantage. The tip substantially decreases the coupling ratio of the floating gate to the word line for fast erasing speed, while at the same time increasing the coupling of the source to the floating gate with the attendant increase in the programming speed of the split gate flash memory cell.
摘要翻译：公开了一种用于形成分离栅闪存单元的方法，其中单元的浮置栅极自对准到隔离，源极和字线。还公开了提供可能的电池的最大收缩率的多自对准结构。通过首先在形成沟槽隔离的同时首先定义浮栅，然后通过使用氮化物层作为硬掩模来代替传统的多晶氧体来将源自对准到浮栅来实现多自对准，并最终形成多晶硅间隔物以将字线对准浮动栅极。此外，通过使用“微笑效果”，薄的浮动门用于形成薄而尖的多头尖端。尖端大大降低了浮动栅极与字线的耦合比，以实现快速擦除速度，同时增加了源极与浮栅的耦合，伴随着分流栅闪存单元的编程速度的增加。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式