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1. 发明授权

US06395608B2 Heterojunction bipolar transistor and its fabrication method 失效
标题翻译：异质结双极晶体管及其制造方法
公开(公告)号：US06395608B2
公开(公告)日：2002-05-28
申请号：US09770503
申请日：2001-01-29
申请人： Jin Ho Shin , Tae Yun Lim , Hyung Wook Kim
发明人： Jin Ho Shin , Tae Yun Lim , Hyung Wook Kim
IPC分类号： H01L21331
CPC分类号： H01L23/4821 , H01L29/41708 , H01L29/66242 , H01L29/7371 , H01L2924/0002 , H01L2924/00
摘要： A heterojunction bipolar transistor and its fabrication method is disclosed. The heterojunction bipolar transistor includes a substrate; a collector layer formed to have a ledge or MESA on the substrate; a collector electrode formed on the collector layer surrounding the ledge; a base layer formed on the ledge of the collector layer; an ohmic cap layer on the emitter layer; an emitter layer formed in the center of the base layer; an emitter electrode formed on the ohmic cap layer; a base electrode formed on the base layer surrounding the emitter electrode; an insulating layer formed to cover the base electrode and to overlay on the insulating layer; a metal wire formed to cover the emitter electrode; and an air bridge brought in contact with the metal wire and electrically connected to an external pad lying on an ion-implanted isolation region.
摘要翻译：公开了一种异质结双极晶体管及其制造方法。异质结双极晶体管包括基板; 形成为在基板上具有凸缘或MESA的集电体层; 集电极，形成在所述集电极层周围的所述突出部; 形成在集电体层的凸缘上的基层; 发射极层上的欧姆盖层; 形成在基底层的中心的发射极层; 形成在欧姆盖层上的发射电极; 基底电极，形成在所述基底层上，围绕所述发射电极; 形成为覆盖所述基极并覆盖在所述绝缘层上的绝缘层; 形成为覆盖发射极的金属线; 以及与所述金属线接触并与位于离子注入隔离区上的外部焊盘电连接的空气桥。

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