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1. 发明授权

US07667244B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07667244B2
公开(公告)日：2010-02-23
申请号：US12149567
申请日：2008-05-05
申请人： Tadashi Narita
发明人： Tadashi Narita
IPC分类号： H01L27/10
CPC分类号： H01L21/823828 , H01L21/823871 , H01L27/0207
摘要： On a semiconductor substrate, a gate electrode is disposed obliquely across the boundary between an N-type region and a P-type region, and thereby an effective gate width of a region, in which the boundary between the N-type region and the P-type region intersects with the gate electrode, is wider than that of the gate electrode. Accordingly, the occurrence of abnormal resistance, which makes it difficult for an electric current to flow in the gate electrode on the boundary between the N-type region and the P-type region, may be effectively suppressed without physically widening the gate width. Moreover, widening of the gate width of the gate electrode may be eliminated in suppressing the occurrence of abnormal resistance and it is not necessary to enlarge the areas of the N-type region and the P-type region, thereby inevitable enlargement of the overall size of the semiconductor device being avoided.
摘要翻译：在半导体衬底上，栅电极倾斜地设置在N型区域和P型区域之间的边界上，由此，N型区域和P型区域之间的边界的有效栅极宽度型区域与栅电极相交，比栅电极宽。因此，可以有效地抑制在N型区域和P型区域之间的边界上的电极中难以流入电流的异常电阻的发生，而不会使栅极宽度变宽。此外，为了抑制异常电阻的发生，可以消除栅电极的栅极宽度的扩大，不需要扩大N型区域和P型区域的面积，不可能扩大整体尺寸的半导体器件。

2. 发明申请

US20090137092A1 Method for manufacturing semiconductor device 失效
公开(公告)号：US20090137092A1
公开(公告)日：2009-05-28
申请号：US12292511
申请日：2008-11-20
申请人： Tadashi Narita , Katsuo Oshima
发明人： Tadashi Narita , Katsuo Oshima
IPC分类号： H01L21/762
CPC分类号： H01L21/76224 , H01L21/823481 , Y10S438/975
摘要： A method for manufacturing a semiconductor device includes forming a plurality of trenches for element isolation and a plurality of trenches for alignment mark on a substrate. The substrate has an active region. The method also includes laminating an oxide film on the substrate and over both of the trenches. The method also includes etching the oxide film using a resist mask that masks the element isolation trenches, so that the oxide film laminated in the active region and the oxide film laminated in the alignment mark trenches are removed. The method also includes polishing a surface of the substrate to planarize or smooth the surface of the substrate. Accordingly, those portions of the oxide film which project from the substrate surface are eliminated and the oxide film remains only inside the element isolation trenches. This divides the active region into a plurality of individual active regions for the respective semiconductor elements. The method also includes positioning the resist mask using the alignment mark trenches. The resist mask is used to fabricate the semiconductor elements in the active regions of the substrate.

3. 发明申请

US20080303100A1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US20080303100A1
公开(公告)日：2008-12-11
申请号：US12149567
申请日：2008-05-05
申请人： Tadashi Narita
发明人： Tadashi Narita
IPC分类号： H01L27/092
CPC分类号： H01L21/823828 , H01L21/823871 , H01L27/0207
摘要： On a semiconductor substrate, a gate electrode is disposed obliquely across the boundary between an N-type region and a P-type region, and thereby an effective gate width of a region, in which the boundary between the N-type region and the P-type region intersects with the gate electrode, is wider than that of the gate electrode. Accordingly, the occurrence of abnormal resistance, which makes it difficult for an electric current to flow in the gate electrode on the boundary between the N-type region and the P-type region, may be effectively suppressed without physically widening the gate width. Moreover, widening of the gate width of the gate electrode may be eliminated in suppressing the occurrence of abnormal resistance and it is not necessary to enlarge the areas of the N-type region and the P-type region, thereby inevitable enlargement of the overall size of the semiconductor device being avoided.
摘要翻译：在半导体衬底上，栅电极倾斜地设置在N型区域和P型区域之间的边界上，由此，N型区域和P型区域之间的边界的有效栅极宽度型区域与栅电极相交，比栅电极宽。因此，可以有效地抑制在N型区域和P型区域之间的边界上的电极中难以流入电流的异常电阻的发生，而不会使栅极宽度变宽。此外，为了抑制异常电阻的发生，可以消除栅电极的栅极宽度的扩大，不需要扩大N型区域和P型区域的面积，不可能扩大整体尺寸的半导体器件。

4. 发明授权

US07282549B2 Fluorine-containing compounds, fluorine-containing polymerizable monomers, fluorine-containing polymers, dissolution inhibitors, and resist compositions 失效
标题翻译：含氟化合物，含氟可聚合单体，含氟聚合物，溶解抑制剂和抗蚀剂组合物
公开(公告)号：US07282549B2
公开(公告)日：2007-10-16
申请号：US10753071
申请日：2004-01-08
申请人： Tadashi Narita , Kazuhiko Maeda
发明人： Tadashi Narita , Kazuhiko Maeda
IPC分类号： C08F118/00
CPC分类号： C07D319/12 , C07C31/44 , C07C33/483 , C07C43/23 , C07C69/65 , C07C69/653 , C07C69/78 , C07C2601/14 , C08F16/26 , C08F20/28
摘要： The invention relates to a fluorine-containing compound containing a substituent represented by the formula 1: where R1 is (a) a straight-chain alkylene group, (b) a branched alkylene group, (c) a cyclic structure containing an aromatic ring group or aliphatic cyclic group, or (d) a substituent containing an aromatic ring group and an aliphatic cyclic group, and R1 optionally contains fluorine, another halogen, CN, oxygen, nitrogen, silicon, or alcohol, and R2 is a hydrogen atom, a straight-chain or branched alkyl group, an aromatic group, or a hydrocarbon group optionally containing an aliphatic cyclic group, and R2 optionally contains fluorine, oxygen, nitrogen, carbonyl bond, or alcohol, and a plural number of R2 having different structures are optionally contained in the molecule.
摘要翻译：本发明涉及含有式1表示的取代基的含氟化合物：其中R 1是（a）直链亚烷基，（b）支链亚烷基，（c）含有芳环基或脂肪族环状基团的环状结构，或（d）含有芳香族环基和脂肪族环状基团的取代基，R 1可以含有氟，另外的卤素，CN，氧氮，硅或醇，R 2是氢原子，直链或支链烷基，芳族基团或任选含有脂肪族环状基团的烃基， SUP> 2 任选地含有氟，氧，氮，羰基键或醇，并且分子中任选地含有多个具有不同结构的R 2 O 2。

5. 发明授权

US4584377A Novel Fredericamycin A derivatives 失效
标题翻译：新型弗雷德霉素A衍生物
公开(公告)号：US4584377A
公开(公告)日：1986-04-22
申请号：US639113
申请日：1984-08-09
申请人： Koichi Yokoi , Hiroshi Hasegawa , Tadashi Narita , Takemitsu Asaoka , Kenichi Kukita , Seiji Ishizeki , Toshiaki Nakashima
发明人： Koichi Yokoi , Hiroshi Hasegawa , Tadashi Narita , Takemitsu Asaoka , Kenichi Kukita , Seiji Ishizeki , Toshiaki Nakashima
IPC分类号： C07D221/20 , C07D221/18
CPC分类号： C07D221/20
摘要： Disclosed herein are Fredericamycin A derivatives, each, represented by the following general formula (I): ##STR1## wherein R means a hydrogen atom or acyl group, A denotes ##STR2## and dotted bonds are optional, with a proviso that when A is ##STR3## or the dotted bonds are contained, R is other than hydrogen atom. They have excellent antibacterial and antitumor activities and at the same time, are extremely stable compared with Fredericamycin A.
摘要翻译：本文公开的是由以下通式（I）表示的弗雷德里霉素A衍生物：其中R表示氢原子或酰基，A表示“IMAGE”，虚线键是任选的，条件是当A为或包含点状键时，R不为氢原子。它们具有优异的抗菌和抗肿瘤活性，同时与弗雷德霉素A相比非常稳定。

6. 发明授权

US07629223B2 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07629223B2
公开(公告)日：2009-12-08
申请号：US12292511
申请日：2008-11-20
申请人： Tadashi Narita , Katsuo Oshima
发明人： Tadashi Narita , Katsuo Oshima
IPC分类号： H01L21/76
CPC分类号： H01L21/76224 , H01L21/823481 , Y10S438/975
摘要： A method for manufacturing a semiconductor device includes forming a plurality of trenches for element isolation and a plurality of trenches for alignment mark on a substrate. The substrate has an active region. The method also includes laminating an oxide film on the substrate and over both of the trenches. The method also includes etching the oxide film using a resist mask that masks the element isolation trenches, so that the oxide film laminated in the active region and the oxide film laminated in the alignment mark trenches are removed. The method also includes polishing a surface of the substrate to planarize or smooth the surface of the substrate. Accordingly, those portions of the oxide film which project from the substrate surface are eliminated and the oxide film remains only inside the element isolation trenches. This divides the active region into a plurality of individual active regions for the respective semiconductor elements. The method also includes positioning the resist mask using the alignment mark trenches. The resist mask is used to fabricate the semiconductor elements in the active regions of the substrate.
摘要翻译：一种制造半导体器件的方法包括：在衬底上形成用于元件隔离的多个沟槽和用于对准标记的多个沟槽。衬底具有活性区域。该方法还包括在衬底上和两个沟槽上层叠氧化膜。该方法还包括使用掩模元件隔离沟槽的抗蚀剂掩模来蚀刻氧化膜，从而去除叠层在有源区中的氧化膜和层叠在对准标记沟槽中的氧化膜。该方法还包括抛光衬底的表面以平坦化或平滑衬底的表面。因此，从衬底表面突出的氧化膜的那些部分被去除，并且氧化物膜仅保留在元件隔离沟槽内部。这将有源区域划分成用于各个半导体元件的多个单独的有源区域。该方法还包括使用对准标记沟槽定位抗蚀剂掩模。抗蚀剂掩模用于在衬底的有源区域中制造半导体元件。

7. 发明授权

US06774660B2 Evaluating pattern for measuring an erosion of a semiconductor wafer polished by a chemical mechanical polishing 有权
标题翻译：用于测量通过化学机械抛光抛光的半导体晶片的侵蚀的评估图案
公开(公告)号：US06774660B2
公开(公告)日：2004-08-10
申请号：US10254645
申请日：2002-09-26
申请人： Tadashi Narita
发明人： Tadashi Narita
IPC分类号： G01R3126
CPC分类号： H01L22/34 , B24B37/04 , B24B49/10 , G01R31/2831
摘要： An evaluating pattern is comprised of a conductive pattern which has a rectangular configuration, an insulating layer which is formed on the conductive pattern, and a conductive material filled into contact holes which is formed in the insulating layer on the middle of the conductive pattern.
摘要翻译：评估图案由具有矩形构造的导电图案，形成在导电图案上的绝缘层和填充到形成在导电图案的中间的绝缘层中的接触孔中的导电材料构成。

8. 发明授权

US5308888A Fluorine-containing curable resin composition and use thereof 失效
标题翻译：含氟可固化树脂组合物及其用途
公开(公告)号：US5308888A
公开(公告)日：1994-05-03
申请号：US20399
申请日：1993-02-22
申请人： Shin Nishimura , Akira Nagai , Akio Takahashi , Akio Mukoo , Tadashi Narita , Tokio Hagiwara , Hiroshi Hamana , Junichi Katagiri
发明人： Shin Nishimura , Akira Nagai , Akio Takahashi , Akio Mukoo , Tadashi Narita , Tokio Hagiwara , Hiroshi Hamana , Junichi Katagiri
IPC分类号： C08F136/16 , H05K1/03 , C08J3/28
CPC分类号： C08F136/16 , H05K1/034
摘要： According to the present invention, there is provided a resin composition which can provide an insulating resin having excellent heat resistance and flame retardance after curing and showing a low dielectric constant.A fluorine-containing photo-setting resin composition comprising a polymer containing fluorine or a fluorine-containing group represented by general formula [II]: ##STR1## wherein R.sup.1 and R.sup.2 are selected from the group consisting of H, F, CH.sub.3 and CF.sub.3 ; R.sup.3 and R.sup.4 are selected from the group consisting of CH.sub.2 and CF.sub.2 ; x and y show 0 to 4 and m shows 30 to 1000, and a photopolymerization initiator, which is a solid at ambient temperature, melts between 100.degree. and 150.degree. C., has a melt viscosity of not greater than 10.sup.6 poise and is photocurable.
摘要翻译：根据本发明，提供一种树脂组合物，其可以提供具有优异的耐热性和固化后的阻燃性并显示低介电常数的绝缘树脂。含氟聚合物的含氟光固化树脂组合物，其含有通式[II]表示的氟或含氟基团的聚合物：其中R 1和R 2选自H，F，CH 3 和CF3; R3和R4选自CH2和CF2; x和y表示0〜4，m表示30〜1000，环境温度为固体的光聚合引发剂在100〜150℃之间熔融，熔融粘度不大于106泊，为光固化。

9. 发明授权

US4613657A Method for anionic homopolymerization of .alpha.-trifluoromethylacrylate 失效
标题翻译： α-三氟甲基丙烯酸酯的阴离子均聚方法
公开(公告)号：US4613657A
公开(公告)日：1986-09-23
申请号：US826585
申请日：1986-02-06
申请人： Tadashi Narita , Tokio Hagiwara , Hiroshi Hamana
发明人： Tadashi Narita , Tokio Hagiwara , Hiroshi Hamana
IPC分类号： C08F20/00 , C08F2/06 , C08F4/06 , C08F4/08 , C08F20/10 , C08F20/16 , C08F20/22 , C08F20/24 , C08F120/24 , C08F14/18
CPC分类号： C08F120/24
摘要： A methanol-insoluble homopolymer of an .alpha.-trifluoromethylacrylate, which has either an alkyl group or a fluorine-containing alkyl group in the ester radical, is formed at good yields in an organic aprotic solvent by using an alkali metal alkoxide, e.g. lithium t-butoxide, as anionic polymerization catalyst.
摘要翻译：通过使用碱金属醇盐例如在有机非质子传递溶剂中以良好的收率形成在酯基中具有烷基或含氟烷基的α-三氟甲基丙烯酸酯的甲醇不溶性均聚物。叔丁醇锂，作为阴离子聚合催化剂。

10. 发明授权

US06480017B2 Evaluating pattern for measuring an erosion of a semiconductor wafer polished by a chemical mechanical polishing 有权
标题翻译：用于测量通过化学机械抛光抛光的半导体晶片的侵蚀的评估图案
公开(公告)号：US06480017B2
公开(公告)日：2002-11-12
申请号：US09770501
申请日：2001-01-29
申请人： Tadashi Narita
发明人： Tadashi Narita
IPC分类号： G01R3126
CPC分类号： H01L22/34 , B24B37/04 , B24B49/10 , G01R31/2831
摘要： An evaluating pattern includes conductive pattern which has a rectangular configuration, an insulating layer which is formed on the conductive pattern, and a conductive material filled into contact holes which is formed in the insulating layer on the middle of the conductive pattern.
摘要翻译：评估图案包括具有矩形构造的导电图案，形成在导电图案上的绝缘层，以及填充到形成在导电图案的中间的绝缘层中的接触孔中的导电材料。

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