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    • 2. 发明授权
    • Semiconductor device and method for manufacturing semiconductor device
    • 半导体装置及半导体装置的制造方法
    • US08772944B2
    • 2014-07-08
    • US13344396
    • 2012-01-05
    • Tadanori Suto
    • Tadanori Suto
    • H01L23/52
    • H01L23/481H01L21/76898H01L2924/0002H01L2924/00
    • A semiconductor substrate includes a via-hole that extends from a first surface to a second surface. An electrode pad layer that serves as the bottom of the via-hole is disposed on the second surface. An insulating layer is formed on the first surface of the semiconductor substrate and the sidewall of the via-hole. A metal layer is formed on the first surface of the semiconductor substrate and the sidewall of the via-hole with the insulating layer interposed therebetween and is directly formed on the bottom of the via-hole. An inclined surface is formed on the sidewall of the via-hole such that the bottom of the via-hole has a smaller opening size than the open end of the via-hole. The inclined surface has asperities.
    • 半导体衬底包括从第一表面延伸到第二表面的通孔。 用作通孔底部的电极焊盘层设置在第二表面上。 绝缘层形成在半导体衬底的第一表面和通孔的侧壁上。 在半导体衬底的第一表面和介于其间的绝缘层的通孔的侧壁上形成金属层,并且直接形成在通孔的底部。 在通孔的侧壁上形成倾斜表面,使得通孔的底部具有比通孔的开口端小的开口尺寸。 倾斜面呈凹凸。
    • 3. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    • 半导体器件及制造半导体器件的方法
    • US20120175781A1
    • 2012-07-12
    • US13344396
    • 2012-01-05
    • Tadanori Suto
    • Tadanori Suto
    • H01L23/48H01L21/28
    • H01L23/481H01L21/76898H01L2924/0002H01L2924/00
    • A semiconductor substrate includes a via-hole that extends from a first surface to a second surface. An electrode pad layer that serves as the bottom of the via-hole is disposed on the second surface. An insulating layer is formed on the first surface of the semiconductor substrate and the sidewall of the via-hole. A metal layer is formed on the first surface of the semiconductor substrate and the sidewall of the via-hole with the insulating layer interposed therebetween and is directly formed on the bottom of the via-hole. An inclined surface is formed on the sidewall of the via-hole such that the bottom of the via-hole has a smaller opening size than the open end of the via-hole. The inclined surface has asperities.
    • 半导体衬底包括从第一表面延伸到第二表面的通孔。 用作通孔底部的电极焊盘层设置在第二表面上。 绝缘层形成在半导体衬底的第一表面和通孔的侧壁上。 在半导体衬底的第一表面和介于其间的绝缘层的通孔的侧壁上形成金属层,并且直接形成在通孔的底部。 在通孔的侧壁上形成倾斜表面,使得通孔的底部具有比通孔的开口端小的开口尺寸。 倾斜面呈凹凸。