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1. 发明申请

US20050269293A1 Seasoning method for etch chamber 审中-公开
标题翻译：蚀刻室调味方法
公开(公告)号：US20050269293A1
公开(公告)日：2005-12-08
申请号：US11141978
申请日：2005-05-31
申请人： Chen-Lung Fan , Kai-Chih Chang , Jih-Jse Lin , Jing-Kae Liou , Ta-Chin Chen , Srisuda Thitinun , Sok-Kiow Tan
发明人： Chen-Lung Fan , Kai-Chih Chang , Jih-Jse Lin , Jing-Kae Liou , Ta-Chin Chen , Srisuda Thitinun , Sok-Kiow Tan
IPC分类号： B44C1/22 , C23F1/00 , C23F4/00
CPC分类号： H01L21/32136 , C23F4/00
摘要： Disclosed is a seasoning method for an etch chamber for improving the passing rate, comprising the steps of: introducing a wafer or plural control wafers into the etch chamber; introducing reacting gases into the etch chamber; applying power to top and bottom electrodes of the etch chamber to plasmarize the reacting gases; and adjusting the gate valve of the etch chamber to 90 to 100% of the fully open position, thereby reducing the amount of by-products and eliminating the factors for reducing the passing rate. The seasoning method of this invention is based on a low pressure, high flow-rate sluicing mechanism, where the atmospheric flow and high vacuuming ability would remove the maximum amount of polymer particles and flaking from the etch chamber.
摘要翻译：公开了一种用于提高通过率的蚀刻室的调味方法，包括以下步骤：将晶片或多个控制晶片引入蚀刻室; 将反应气体引入蚀刻室; 将电力施加到蚀刻室的顶部和底部电极以使反应气体均质化; 并且将蚀刻室的闸阀调整到完全打开位置的90至100％，从而减少副产物的量并消除降低通过率的因素。本发明的调味方法是基于低压，高流速的洗涤机构，其中大气流量和高吸尘能力将去除最大量的聚合物颗粒和从蚀刻室剥落。

2. 发明授权

US06325948B1 Waferless clean process of a dry etcher 有权
标题翻译：干蚀刻机的无干净清洁工艺
公开(公告)号：US06325948B1
公开(公告)日：2001-12-04
申请号：US09399359
申请日：1999-09-20
申请人： Ta-Chin Chen , Wen-Ruey Chang , Hsew-Chu Hsu , Ming-Je Huang , Sheung Kan Tsang , Yuk Hong Ting
发明人： Ta-Chin Chen , Wen-Ruey Chang , Hsew-Chu Hsu , Ming-Je Huang , Sheung Kan Tsang , Yuk Hong Ting
IPC分类号： H01L2100
摘要： A waferless cleaning process of a dry etcher in semiconductor field, comprises the steps of: removing a batch of production wafers out of the chamber of the dry etcher, automatically starting waferless plasma cleaning to clean the chamber when at least a process factor reaches a preset condition, and loading next batch of production wafers into the chamber to undergo a normal production procedure. The process extends the meantime between wet clean (MTBC), prevents high particle counts, stabilizes the chamber condition, and improves process performance, tool uptime and throughput. The invention is characterized by not requiring any dummy wafers. Thus, the present invention does not need an operator. Besides, the present invention is capable of mixing different types of products.
摘要翻译：在半导体领域中的干蚀刻器的无晶圆清洗方法包括以下步骤：将一批生产晶片从干蚀刻机的腔室中取出，自动启动无晶圆等离子体清洁，以在至少过程因子达到预设值时清洁腔室条件，并将下一批生产晶片装载到室中以进行正常的生产程序。该过程同时延伸到湿清洁（MTBC）之间，防止高粒度计数，稳定室条件，并提高过程性能，工具正常运行时间和吞吐量。本发明的特征在于不需要任何虚拟晶片。因此，本发明不需要操作者。此外，本发明能够混合不同类型的产品。

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