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    • 6. 发明申请
    • METHOD FOR THE FABRICATION OF SUSPENDED POROUS SILICON MICROSTRUCTURES AND APPLICATION IN GAS SENSORS
    • 悬挂多孔硅微结构的制造方法及其在气体传感器中的应用
    • WO2003011747A1
    • 2003-02-13
    • PCT/GR2002/000008
    • 2002-02-18
    • NCSR "DEMOKRITOS"TSAMIS, ChristosTSEREPI, AngelikiNASSIOPOULOU, Androula, G.
    • TSAMIS, ChristosTSEREPI, AngelikiNASSIOPOULOU, Androula, G.
    • B81B3/00
    • H05B3/265B81B2201/0278B81B2203/0109B81B2203/0118B81C1/00682B81C1/0069B81C2201/0115G01F1/6845G01N27/12G01N27/16G01N27/18
    • This invention provides a front-side silicon micromachining process for the fabrication of suspended Porous Silicon membranes in the form of bridges or cantilevers and of thermal sensor devices employing these membranes. The fabrication of the suspended Porous Silicon membranes comprises the following steps: (a) formation of a Porous Silicon layer (2) in, at least one, predefined area of a Silicon substrate (1), (b) definition of etch windows (5) around or inside said Porous Silicon layer (2) using standard photolithography and (c) selective etching of the Silicon substrate (1), underneath the Porous Silicon layer (2), by using dry etching techniques to provide release of the Porous Silicon membrane and to form a cavity (6) under the said Porous Silicon layer. Furthermore, the present invention provides a method for the fabrication of thermal sensors based on Porous Silicon membranes with minimal thermal losses, since the proposed methodology combines the advantages that result from the low thermal conductivity of Porous Silicon and the use of suspended membranes. Moreover, the front-side micromachining process proposed in the present invention simplifies the fabrication process. Various types of thermal sensor devices, such as calorimetric-type gas sensors, conductometric-type gas sensors and thermal conductivity sensors are described utilizing the proposed methodology.
    • 本发明提供了一种用于制造桥梁或悬臂形式的悬浮多孔硅膜和使用这些膜的热传感器装置的前侧硅微加工方法。 悬浮的多孔硅膜的制造包括以下步骤:(a)在硅衬底(1)的至少一个预定区域中形成多孔硅层(2),(b)蚀刻窗口(5) )使用标准光刻法和(c)在多孔硅层(2)下方的硅衬底(1)的选择性蚀刻,通过使用干蚀刻技术提供多孔硅膜(2)的多孔硅膜(2)的内部 并在所述多孔硅层下方形成空腔(6)。 此外,本发明提供了一种用于制造基于具有最小热损失的多孔硅膜的热传感器的方法,因为所提出的方法结合了多孔硅的低热导率和悬浮膜的使用所产生的优点。 此外,本发明中提出的前侧微加工工艺简化了制造工艺。 使用所提出的方法来描述各种类型的热传感器装置,例如量热式气体传感器,电导型气体传感器和导热传感器。