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1. 发明申请

WO2012009183A2 METHOD FOR FAST ESTIMATION OF LITHOGRAPHIC BINDING PATTERNS IN AN INTEGRATED CIRCUIT LAYOUT 审中-公开
标题翻译：用于快速估计集成电路布局中的光刻绑定图案的方法
公开(公告)号：WO2012009183A2
公开(公告)日：2012-01-19
申请号：PCT/US2011/042991
申请日：2011-07-06
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , BAGHERI, Saeed , DEMARIS, David, L. , GABRANI, Maria , MELVILLE, David, Osmond , ROSENBLUTH, Alan, E. , TIAN, Kehan
发明人： BAGHERI, Saeed , DEMARIS, David, L. , GABRANI, Maria , MELVILLE, David, Osmond , ROSENBLUTH, Alan, E. , TIAN, Kehan
IPC分类号： H01L21/027 , H01L21/66
CPC分类号： G03F1/70 , G06F17/5081
摘要： The present invention provides a lithographic difficulty metric that is a function of an energy ratio factor that includes a ratio of hard-to-print energy to easy-to-print energy of the diffraction orders along an angular coordinate i{ of spatial frequency space, an energy entropy factor comprising energy entropy of said diffraction orders along said angular coordinate ft, a phase entropy factor comprising phase entropy of said diffraction orders along said angular coordinate 6,, and a total energy entropy factor comprising total energy entropy of said diffraction orders (430, 440). The hard-to-print energy includes energy of the diffraction orders at values of the normalized radial coordinates r of spatial frequency space in a neighborhood of r=0 and in a neighborhood of r=l, and the easy-to-print energy includes energy of the diffraction orders located at intermediate values of normalized radial coordinates r between the neighborhood of r=0 and the neighborhood of r=l. The value of the lithographic difficulty metric may be used to identify patterns in a design layout that are binding patterns in an optimization computation. The lithographic difficulty metric may be used to design integrated circuits that have good, relatively easy-to-print characteristics.
摘要翻译：本发明提供光刻难度度量，其是能量比率因数的函数，该能量比率因数包括沿着角度的衍射级的难以打印能量与易于打印能量的比率坐标i，空间频率空间的坐标i，包括沿所述角坐标ft的所述衍射级的能熵的能熵因子，包含所述衍射级的沿着所述角坐标的相熵的相熵因子和包括所述衍射级（430,440）的总能量熵。难以打印的能量包括在r = 0附近和r = 1附近的空间频率空间的归一化径向坐标r的值处的衍射级的能量，并且易于打印的能量包括衍射级的能量位于r = 0的邻域和r = 1的邻域之间的归一化径向坐标r的中间值处。光刻难度度量的值可以用来识别设计布局中的图案，其是优化计算中的绑定图案。光刻难度度量可用于设计具有良好的，相对易于打印的特性的集成电路。

2. 发明申请

WO2012009183A3 METHOD FOR FAST ESTIMATION OF LITHOGRAPHIC BINDING PATTERNS IN AN INTEGRATED CIRCUIT LAYOUT 审中-公开
标题翻译：用于快速估计集成电路布局中的平面结合图案的方法
公开(公告)号：WO2012009183A3
公开(公告)日：2012-04-26
申请号：PCT/US2011042991
申请日：2011-07-06
申请人： IBM , BAGHERI SAEED , DEMARIS DAVID L , GABRANI MARIA , MELVILLE DAVID OSMOND , ROSENBLUTH ALAN E , TIAN KEHAN
发明人： BAGHERI SAEED , DEMARIS DAVID L , GABRANI MARIA , MELVILLE DAVID OSMOND , ROSENBLUTH ALAN E , TIAN KEHAN
IPC分类号： H01L21/027 , H01L21/66
CPC分类号： G03F1/70 , G06F17/5081
摘要： The present invention provides a lithographic difficulty metric that is a function of an energy ratio factor that includes a ratio of hard-to-print energy to easy-to-print energy of the diffraction orders along an angular coordinate i{ of spatial frequency space, an energy entropy factor comprising energy entropy of said diffraction orders along said angular coordinate ft, a phase entropy factor comprising phase entropy of said diffraction orders along said angular coordinate 6,, and a total energy entropy factor comprising total energy entropy of said diffraction orders (430, 440). The hard-to-print energy includes energy of the diffraction orders at values of the normalized radial coordinates r of spatial frequency space in a neighborhood of r=0 and in a neighborhood of r=l, and the easy-to-print energy includes energy of the diffraction orders located at intermediate values of normalized radial coordinates r between the neighborhood of r=0 and the neighborhood of r=l. The value of the lithographic difficulty metric may be used to identify patterns in a design layout that are binding patterns in an optimization computation. The lithographic difficulty metric may be used to design integrated circuits that have good, relatively easy-to-print characteristics.
摘要翻译：本发明提供了一种光刻难度度量，其是能量比因子的函数，能量比因子包括沿着沿着空间频率空间的角坐标i的衍射级的难以打印能量的容易打印能量的比率，包括沿着所述角坐标ft的所述衍射级的能量熵的能量熵因子，包括沿着所述角坐标6的所述衍射级的相位熵的相位熵因子，以及包括所述衍射级的总能量熵的总能量熵因子 430,440）。难以打印的能量包括在r = 0和r = 1附近的空间频率空间的归一化径向坐标r的值的衍射级的能量，并且易于打印的能量包括位于r = 0附近和r = 1附近的归一化径向坐标r的中间值处的衍射级的能量。光刻难度度量的值可用于识别在优化计算中的结合模式的设计布局中的图案。光刻难度度可用于设计具有良好的，相对易于打印的特性的集成电路。

3. 发明申请

WO2011116127A1 WAVEFRONT ENGINEERING OF MASK DATA FOR SEMICONDUCTOR DEVICE DESIGN 审中-公开
标题翻译：用于半导体器件设计的掩模数据的WAVEFRONT工程
公开(公告)号：WO2011116127A1
公开(公告)日：2011-09-22
申请号：PCT/US2011/028720
申请日：2011-03-16
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , BAGHERI, Saeed , INOUE, Tadanobu , MELVILLE, David O. , MUTA, Hidemasa , ROSENBLUTH, Alan E. , SAKAMOTO, Masahura , TIAN, Kehan
发明人： BAGHERI, Saeed , INOUE, Tadanobu , MELVILLE, David O. , MUTA, Hidemasa , ROSENBLUTH, Alan E. , SAKAMOTO, Masahura , TIAN, Kehan
IPC分类号： G06F17/50
CPC分类号： G03F7/70433 , G03F1/36 , G03F1/70 , G03F7/705
摘要： Optical wave data for a semiconductor device design is divided into regions (102). First wavefront engineering is performed on the wave data of each region, accounting for just the wave data of each region. The optical wave date of each region is normalized based on the first wavefront engineering (106). Second wavefront engineering is performed on the wave data of each region, based at least on the wave data of each region as normalized (108). The second wavefront engineering takes into account the wave data of each region and a guard band around each region including the wave data of the neighboring regions of each region. The second wavefront engineering can be sequentially performed in parallel by organizing the regions into groups (110).
摘要翻译：用于半导体器件设计的光波数据被划分为区域（102）。对每个区域的波形数据执行第一波前工程，仅考虑每个区域的波形数据。基于第一波前工程（106）对每个区域的光波日期进行归一化。至少基于每个区域的波形数据进行归一化，对每个区域的波形数据执行第二波前工程（108）。第二波前工程考虑了每个区域的波数据和围绕每个区域的保护带，包括每个区域的相邻区域的波数据。可以通过将区域组织成组（110）来并行地顺序地执行第二波前工程。

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