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    • 4. 发明申请
    • SENSOR ASSEMBLY
    • 传感器装置
    • WO03038423A3
    • 2003-08-14
    • PCT/DE0203098
    • 2002-08-23
    • INFINEON TECHNOLOGIES AGEVERSMANN BJOERN-OLIVERPAULUS CHRISTIANSTROMBERG GUIDOTHEWES ROLAND
    • EVERSMANN BJOERN-OLIVERPAULUS CHRISTIANSTROMBERG GUIDOTHEWES ROLAND
    • G01N27/414G01N33/487G06K9/00G01N27/403
    • G06K9/0002G01N27/4145G01N33/4836
    • The invention relates to a sensor assembly comprising a plurality of line conductors oriented in a first direction, a plurality of column conductors oriented in at least a second direction, and a plurality of sensor fields arranged in intersection zones between line conductors and column conductors. Each sensor field comprises at least one coupling device for electrically coupling respectively a line conductor with a column conductor, and a sensing element which is associated with the coupling device and which is designed in such a way as to influence the electric current flow passing through the associated coupling device. The inventive sensor assembly also comprises a means electrically coupled with an end zone of at least part of the line conductors and of at least part of the column conductors and designed to detect a corresponding cumulative current flow, consisting of individual current flows supplied by the sensor fields of each conductor. The inventive sensor assembly further comprises a decoding device coupled with the line conductors and with the column conductors.
    • 所述传感器装置包括多个布置在第一方向上的行线,多个设置在至少一个第二方向的列线和多个布置在列线和列线传感器阵列具有至少一个耦合设备的交叉 用于与相应的一个列线和被分配给所述至少一个耦合设备的传感器元件相应的一个行线的电联接器,其中所述传感器元件被布置为使得所述传感器元件的电流流过 所述至少一个相关联的联接装置会影响此外,传感器布置中,到行线,并电耦合至用于检测从所述的相应的总和的电流流动的列线的至少一部分的至少一部分的相应的端部 相应雷的传感器阵列的 桐油提供单独的电电流流过并具有耦合到所述行线和列线解码装置。
    • 6. 发明申请
    • MAGNETORESISTIVE MEMORY AND METHOD FOR READING OUT FROM THE SAME
    • 磁阻存储器和读出方法FOR HIS
    • WO0247089A2
    • 2002-06-13
    • PCT/DE0104400
    • 2001-11-22
    • INFINEON TECHNOLOGIES AGTHEWES ROLANDWEBER WERNERBERG HUGO VAN DEN
    • THEWES ROLANDWEBER WERNERVAN DEN BERG HUGO
    • G11C11/15G11C11/16H01L43/08G11C11/00
    • G11C11/15G11C11/16
    • The invention relates to a magnetoresistive memory and is characterized by a control circuit (1) with a first pole which, via a reading distributor (14), can be individually connected to first ends of bit lines (4a, 4b) by means of switching elements (8a, 8b). Said control circuit also has a second pole, which supplies power to an evaluator (2), and has a third pole that is connected to a reference voltage source (U5). The readout circuit additionally comprises a third voltage source (U3) having a voltage, which is approximately equal to the voltage of the first reading voltage source (U1) and which can be individually connected to second ends of the bit lines (4a, 4b) by means of switching elements (9a, 9b). Finally, the readout circuit comprises a fourth voltage source (U4), which can be individually connected to second ends of the word lines (5a, 5b) by means of switching elements (7a, 7b).
    • 用于磁 - 电阻性存储器的读出电路,其包括具有第一端的控制电路(1)的经由读分配器(14)由开关元件(8A,8B)与位线的第一端(4A,4B)可被单独地连接; 在评估器(一个或多个)将其当前的第二极; 连接,以及第三极,其连接到基准电压源(U5); 第三电压源(U3)具有电压近似等于所述第一读取电压源(U1)的电压和通过开关元件89A,9B)与位线(4a的第二端部,4B)可被单独地连接; 和第四电压源(U4),它经由开关元件(7A,7B)的字线的第二端(5A,5B)可以被单独地连接。
    • 9. 发明申请
    • ELECTRONIC CIRCUIT
    • 电子电路
    • WO1997026656A1
    • 1997-07-24
    • PCT/DE1997000071
    • 1997-01-16
    • SIEMENS AKTIENGESELLSCHAFTVON BASSE, Paul-WernerTHEWES, RolandSCHMITT-LANDSIEDEL, DorisBOLLU, Michael
    • SIEMENS AKTIENGESELLSCHAFT
    • G11C07/06
    • G01R27/02
    • The invention concerns an electronic circuit comprising an inverter and a further transistor (M3) of which the gate connection is connected to the inverter output and of which the source and drain connections are connected between the input of the inverter (PL) and a connection of the supply voltage (VDD) such that a feedback loop is produced. When the input voltage drops from a maximum value as a result of low resistance at the test lead when a given voltage value is attained, the feedback loop allows the output voltage to jump to an extreme value such that the current flowing through the circuit first increases to a maximum and is interrupted abruptly when a maximum current intensity is reached. A fourth transistor (M4) between the further transistor (M3) and the connection to the supply voltage is provided in order to adapt the circuit to different conditions by applying a control voltage (VS) to the gate of this transistor. This circuit can, for example, be used to read semiconductor memories.
    • 连接在逆变器和另外的晶体管(M3),其栅极端子连接到逆变器和逆变器(PL)的输入之间的源极和漏极端子的输出的电子电路和电源电压的端子(VDD)是 ,使得反馈实现,其可以跳输出电压极值当输入电压从最大值下降的测试线的低电阻的结果,当一定的电压值,使得电流流过电路第一增加到最大 并达到最大电流时突然中断。 该另一个晶体管(M3)和到电源的连接之间的第四晶体管(M4)被施加控制电压(VS)到这个晶体管的栅极,以适应电路以不同的条件规定。 该电路可以是例如 被用于读出的半导体存储器。