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1. 发明申请

WO2011163430A9 POLYMORPHS OF OSI-906 审中-公开
公开(公告)号：WO2011163430A9
公开(公告)日：2011-12-29
申请号：PCT/US2011/041547
申请日：2011-06-23
申请人： OSI PHARMACEUTICALS, LLC , CASTELHANO, Arlindo, L. , ENGERS, David, A. , HANKO, Jason, A. , RECHKA, Josef, A. , TENG, Jing , YANG, Yonglai
发明人： CASTELHANO, Arlindo, L. , ENGERS, David, A. , HANKO, Jason, A. , RECHKA, Josef, A. , TENG, Jing , YANG, Yonglai
IPC分类号： C07D487/04 , A61P35/00 , A61K31/4985
摘要： Polymorphic forms of the tyrosine kinase inhibitor OSI-906, preparation, pharmaceutical compositions, and uses thereof. The invention includes methods of treating diseases such as cancer, including cancer mediated at least in part by IGF-1 R and/or IR, with the polymorphs and compositions. This Abstract is not limiting of the invention.

2. 发明申请

WO2010059132A1 A LIGHT EMITTING DIODE STRUCTURE AND A METHOD OF FORMING A LIGHT EMITTING DIODE STRUCTURE 审中-公开
标题翻译：发光二极管结构和形成发光二极管结构的方法
公开(公告)号：WO2010059132A1
公开(公告)日：2010-05-27
申请号：PCT/SG2009/000438
申请日：2009-11-20
申请人： AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH , LIU, Wei , SOH, Chew Beng , CHUA, Soo Jin , TENG, Jing Hua
发明人： LIU, Wei , SOH, Chew Beng , CHUA, Soo Jin , TENG, Jing Hua
IPC分类号： H01L33/06 , H01L33/14 , H01L33/32
CPC分类号： H01L33/04 , H01L33/08 , H01L33/32
摘要： A light emitting diode structure and a method of forming a light emitting diode structure are provided. The structure comprises a superlattice comprising, a first barrier layer; a first quantum well layer comprising a first metal-nitride based material formed on the first barrier layer; a second barrier layer formed on the first quantum well layer; and a second quantum well layer comprising the first metal-nitride based material formed on the second barrier layer; and wherein a difference between conduction band energy of the first quantum well layer and conduction band energy of the second quantum well layer is matched to a single or multiple longitudinal optical phonon energy for reducing electron kinetic energy in the superlattice.
摘要翻译：提供发光二极管结构和形成发光二极管结构的方法。该结构包括超晶格，其包括第一阻挡层; 第一量子阱层，包括形成在第一阻挡层上的第一金属氮化物基材料; 形成在第一量子阱层上的第二阻挡层; 以及第二量子阱层，包括形成在所述第二阻挡层上的所述第一金属氮化物基材料; 并且其中所述第一量子阱层的导带能量与所述第二量子阱层的导带能量之间的差与单个或多个纵向光学声子能量匹配以减少所述超晶格中的电子动能。

3. 发明申请

WO2009048425A1 FABRICATION OF PHOSPHOR FREE RED AND WHITE NITRIDE-BASED LEDS 审中-公开
标题翻译：无磷红磷和白光LED的制造
公开(公告)号：WO2009048425A1
公开(公告)日：2009-04-16
申请号：PCT/SG2007/000350
申请日：2007-10-12
申请人： AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH , SOH, Chew Beng , CHUA, Soo Jin , LIU, Wei , TENG, Jing Hua
发明人： SOH, Chew Beng , CHUA, Soo Jin , LIU, Wei , TENG, Jing Hua
IPC分类号： H01L33/00 , H01L27/15 , H01L29/15
CPC分类号： H01L33/06 , H01L27/153 , H01L33/08 , H01L33/32
摘要： A multiple quantum well (MQW) structure for a light emitting diode and a method for fabricating a MQW structure for a light emitting diode are provided. The MQW structure comprises a plurality of quantum well structures, each quantum well structure comprising: a barrier layer; and a well layer having quantum dot nanostructures embedded therein formed on the barrier layer, the barrier and the well layer comprising a first metal-nitride based material; wherein at least one of the quantum well structures further comprises a capping layer formed on the well layer, the capping layer comprising a second metal-nitride based material having a different metal element compared to the first metal-nitride based material.
摘要翻译：提供了用于发光二极管的多量子阱（MQW）结构和用于制造用于发光二极管的MQW结构的方法。 MQW结构包括多个量子阱结构，每个量子阱结构包括：阻挡层; 以及在所述阻挡层上形成有嵌入其中的量子点纳米结构的阱层，所述势垒层和所述阱层包含第一金属氮化物基材料; 其中所述量子阱结构中的至少一个还包括形成在所述阱层上的覆盖层，所述覆盖层包含与所述第一金属氮化物基材料相比具有不同金属元素的第二金属氮化物基材料。

4. 发明申请

WO03085742A8 METHOD FOR FORMING A MODIFIED SEMICONDUCTOR HAVING A PLURALITY OF BAND GAPS 审中-公开
标题翻译：用于形成具有多重条纹GAPS的改性半导体的方法
公开(公告)号：WO03085742A8
公开(公告)日：2004-07-15
申请号：PCT/SG0300074
申请日：2003-04-04
申请人： AGENCY SCIENCE TECH & RES , UNIV SINGAPORE , TENG JING HUA , CHUA SOO JIN , DONG JIAN RONG
发明人： TENG JING HUA , CHUA SOO JIN , DONG JIAN RONG
IPC分类号： H01L21/18 , H01L29/12 , H01L33/00 , H01S5/10 , H01S5/16 , H01S5/40 , H01L29/15 , H01S5/34
CPC分类号： B82Y10/00 , B82Y20/00 , H01L21/182 , H01L29/122 , H01L29/125 , H01L29/127 , H01L33/0095 , H01S5/1003 , H01S5/1092 , H01S5/162 , H01S5/3412 , H01S5/3414 , H01S5/4087
摘要： A method for forming a modified semiconductor having a number of band gaps. The first step involves providing a semiconductor having a surface and a quantum region which emits photons in response to electrical or optical stimulation, the quantum region having an original band gap and being disposed under the surface. The next step involves applying a number of layers of a number of materials to a number of selected regions of the surface, the materials being adapted to cause, upon thermal annealing, a number of different degrees of intermixing in a number of portions of the quantum region disposed immediately below each of the selected regions of the surface. The layers of materials can be applied in a dot or line pattern, or both, to increase the plurality of band gap tuning. The next step involves thermally annealing the layers to the surface such that the layers cause a number of degrees of intermixing in the different portions of said quantum region thereby shifting the original band gaps of those portions. These steps result in a modified semiconductor which exhibits a number of different band gaps in a number of portions of the quantum region depending upon the positioning of the layers of materials on the surface immediately above the respective portions of the quantum region.
摘要翻译：一种形成具有多个带隙的改性半导体的方法。第一步涉及提供具有响应于电或光刺激而发射光子的表面和量子区的半导体，该量子区具有原始带隙并且被布置在该表面下。下一个步骤包括将多个材料层施加到表面的多个选定区域，该材料适于在热退火时引起数量的多个部分中的多种不同程度的混合该区域紧邻在该表面的每个选定区域的下方。可以以点或线图案或两者来施加材料层以增加多个带隙调谐。下一步骤涉及将层热层退火到表面，使得这些层在所述量子区域的不同部分中引起数个程度的混合，从而移动这些部分的原始带隙。这些步骤导致修改的半导体，其取决于材料层在紧邻量子区域的相应部分上方的表面上的位置，在量子区的多个部分中显示出许多不同的带隙。

5. 发明申请

WO2003085742A1 METHOD FOR FORMING A MODIFIED SEMICONDUCTOR HAVING A PLURALITY OF BAND GAPS 审中-公开
标题翻译：用于形成具有多重条纹GAPS的改性半导体的方法
公开(公告)号：WO2003085742A1
公开(公告)日：2003-10-16
申请号：PCT/SG2003/000074
申请日：2003-04-04
申请人： INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING , NATIONAL UNIVERSITY OF SINGAPORE , TENG, Jing, Hua , CHUA, Soo, Jin , DONG, Jian, Rong
发明人： TENG, Jing, Hua , CHUA, Soo, Jin , DONG, Jian, Rong
IPC分类号： H01L29/15
CPC分类号： B82Y10/00 , B82Y20/00 , H01L21/182 , H01L29/122 , H01L29/125 , H01L29/127 , H01L33/0095 , H01S5/1003 , H01S5/1092 , H01S5/162 , H01S5/3412 , H01S5/3414 , H01S5/4087
摘要： A method for forming a modified semiconductor having a number of band gaps. The first step involves providing a semiconductor having a surface and a quantum region which emits photons in response to electrical or optical stimulation, the quantum region having an original band gap and being disposed under the surface. The next step involves applying a number of layers of a number of materials to a number of selected regions of the surface, the materials being adapted to cause, upon thermal annealing, a number of different degrees of intermixing in a number of portions of the quantum region disposed immediately below each of the selected regions of the surface. The layers of materials can be applied in a dot or line pattern, or both, to increase the plurality of band gap tuning. The next step involves thermally annealing the layers to the surface such that the layers cause a number of degrees of intermixing in the different portions of said quantum region thereby shifting the original band gaps of those portions. These steps result in a modified semiconductor which exhibits a number of different band gaps in a number of portions of the quantum region depending upon the positioning of the layers of materials on the surface immediately above the respective portions of the quantum region.
摘要翻译：一种形成具有多个带隙的改性半导体的方法。第一步涉及提供具有响应于电或光刺激而发射光子的表面和量子区的半导体，该量子区具有原始带隙并且被布置在该表面下。下一个步骤包括将多个材料层施加到表面的多个选定区域，该材料适于在热退火时引起数量的多个部分中的多种不同程度的混合该区域紧邻在该表面的每个选定区域的下方。可以以点或线图案或两者来施加材料层以增加多个带隙调谐。下一步骤涉及将层热层退火到表面，使得这些层在所述量子区域的不同部分中引起数个程度的混合，从而移动这些部分的原始带隙。这些步骤导致修改的半导体，其取决于材料层在紧邻量子区域的相应部分上方的表面上的位置，在量子区的多个部分中显示出许多不同的带隙。

6. 发明申请

WO2012009387A1 FORMULATIONS OF RIFAXIMIN AND USES THEREOF 审中-公开
标题翻译： Rifaximin的制剂及其用途
公开(公告)号：WO2012009387A1
公开(公告)日：2012-01-19
申请号：PCT/US2011/043767
申请日：2011-07-12
申请人： SALIX PHARMACEUTICALS, LTD , SELBO, Jon , TENG, Jing , KABIR, Mohammed, A. , GOLDEN, Pam
发明人： SELBO, Jon , TENG, Jing , KABIR, Mohammed, A. , GOLDEN, Pam
IPC分类号： C07D498/00
CPC分类号： A61K47/38 , A61K9/10 , A61K9/146 , A61K9/1641 , A61K9/1652 , A61K9/2027 , A61K9/2054 , A61K9/4858 , A61K9/4866 , A61K31/437 , A61K47/32 , C07D498/22
摘要： The present invention relates to new rifaximin forms comprising solid dispersions of rifaximin, methods of making same and to their use in medicinal preparations and therapeutic methods.
摘要翻译：本发明涉及包含利福昔明固体分散体的新的利福昔明形式，其制备方法及其在药物制剂和治疗方法中的用途。

7. 发明申请

WO2011163430A1 POLYMORPHS OF OSI-906 审中-公开
标题翻译： OSI-906的多重性
公开(公告)号：WO2011163430A1
公开(公告)日：2011-12-29
申请号：PCT/US2011041547
申请日：2011-06-23
申请人： OSI PHARMACEUTICALS LLC , CASTELHANO ARLINDO L , ENGERS DAVID A , HANKO JASON A , RECHKA JOSEF A , TENG JING , YANG YONGLAI
发明人： CASTELHANO ARLINDO L , ENGERS DAVID A , HANKO JASON A , RECHKA JOSEF A , TENG JING , YANG YONGLAI
IPC分类号： C07D487/04 , A61K31/4985 , A61P35/00
CPC分类号： C07D487/04 , A61K31/4985
摘要： Polymorphic forms of the tyrosine kinase inhibitor OSI-906, preparation, pharmaceutical compositions, and uses thereof. The invention includes methods of treating diseases such as cancer, including cancer mediated at least in part by IGF-1 R and/or IR, with the polymorphs and compositions. This Abstract is not limiting of the invention.
摘要翻译：酪氨酸激酶抑制剂OSI-906的多形态，制剂，药物组合物及其用途。本发明包括治疗诸如癌症的疾病的方法，包括至少部分地通过IGF-1R和/或IR介导的癌症与多晶型物和组合物。本发明并不限于本发明。

8. 发明申请

WO2012009388A1 FORMULATIONS OF RIFAXIMIN AND USES THEREOF 审中-公开
标题翻译： RIFAXIMIN的制剂及其用途
公开(公告)号：WO2012009388A1
公开(公告)日：2012-01-19
申请号：PCT/US2011/043769
申请日：2011-07-12
申请人： SALIX PHARMACEUTICALS, LTD , SELBO, Jon , TENG, Jing , KABIR, Mohammed, A. , GOLDEN, Pam
发明人： SELBO, Jon , TENG, Jing , KABIR, Mohammed, A. , GOLDEN, Pam
IPC分类号： C07D498/00
CPC分类号： A61K47/38 , A61K9/10 , A61K9/146 , A61K9/1641 , A61K9/1652 , A61K9/2027 , A61K9/2054 , A61K9/4858 , A61K9/4866 , A61K31/437 , A61K47/32 , C07D498/22
摘要： The present invention relates to new rifaximin forms comprising solid dispersions of rifaximin, methods of making same and to their use in medicinal preparations and therapeutic methods.
摘要翻译：本发明涉及包含利福昔明的固体分散体的新的利福昔明形式，其制备方法及其在药物制剂和治疗方法中的应用。

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