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1. 发明申请

WO2011059645A3 ONE-TIME PROGRAMMABLE MEMORY DEVICE AND METHODS THEREOF 审中-公开
标题翻译：一次性可编程存储器装置及其方法
公开(公告)号：WO2011059645A3
公开(公告)日：2011-08-18
申请号：PCT/US2010053205
申请日：2010-10-19
申请人： FREESCALE SEMICONDUCTOR INC , STRAUSS TIMOTHY J , TAYLOR KELLY K
发明人： STRAUSS TIMOTHY J , TAYLOR KELLY K
IPC分类号： G06F13/10 , G06F13/14 , G11C16/08 , G11C16/10
CPC分类号： G11C16/10 , G11C16/22 , G11C16/26 , G11C16/3459 , G11C2216/26
摘要： A portion of a programmable memory device (104) is configured as a one-time programmable (OTP) memory, where in response to a write access to the memory device, a memory controller (118) determines whether the write access is associated with a memory location designated as an OTP memory location (404). If so, the memory controller performs a read of the memory location (408), and allows the write access only if each memory cell of the memory location is in an un-programmed state (410). Thus, only a single write access to an OTP memory location is permitted, and subsequent write attempts are disallowed. Further, to enhance detection of programmed cells, the read of the OTP memory location is performed with a lower read voltage than a read voltage associated with a write access (407) to a non-OTP memory location, thereby improving detection of programmed memory cells in the OTP memory location.
摘要翻译：可编程存储器装置（104）的一部分被配置为一次可编程（OTP）存储器，其中响应于对存储器装置的写入访问，存储器控制器（118）确定写入访问是否与存储器位置被指定为OTP存储器位置（404）。如果是，则存储器控制器执行存储器位置的读取（408），并且仅当存储器位置的每个存储器单元处于未编程状态时才允许写入访问（410）。因此，只允许对OTP存储单元的单个写入访问，并且后续的写入尝试不被允许。此外，为了增强对编程单元的检测，使用比与对非OTP存储单元的写入访问（407）相关联的读取电压更低的读取电压来执行OTP存储器位置的读取，由此改进对编程的存储器单元的检测在OTP内存位置。

2. 发明申请

WO2011059645A2 ONE-TIME PROGRAMMABLE MEMORY DEVICE AND METHODS THEREOF 审中-公开
标题翻译：一次可编程存储器件及其方法
公开(公告)号：WO2011059645A2
公开(公告)日：2011-05-19
申请号：PCT/US2010/053205
申请日：2010-10-19
申请人： FREESCALE SEMICONDUCTOR, INC. , STRAUSS, Timothy, J. , TAYLOR, Kelly, K.
发明人： STRAUSS, Timothy, J. , TAYLOR, Kelly, K.
CPC分类号： G11C16/10 , G11C16/22 , G11C16/26 , G11C16/3459 , G11C2216/26
摘要： A portion of a programmable memory device (104) is configured as a one-time programmable (OTP) memory, where in response to a write access to the memory device, a memory controller (118) determines whether the write access is associated with a memory location designated as an OTP memory location (404). If so, the memory controller performs a read of the memory location (408), and allows the write access only if each memory cell of the memory location is in an un-programmed state (410). Thus, only a single write access to an OTP memory location is permitted, and subsequent write attempts are disallowed. Further, to enhance detection of programmed cells, the read of the OTP memory location is performed with a lower read voltage than a read voltage associated with a write access (407) to a non-OTP memory location, thereby improving detection of programmed memory cells in the OTP memory location.
摘要翻译：可编程存储器件（104）的一部分被配置为一次性可编程（OTP）存储器，其中响应于对存储器件的写入访问，存储器控制器（118）确定写访问是否与指定为OTP存储器位置的存储器位置（404）。如果是，存储器控制器执行存储器位置（408）的读取，并且仅当存储器位置的每个存储器单元处于未编程状态时才允许写访问（410）。因此，只允许对OTP存储器位置的单个写入访问，并且不允许后续写入尝试。此外，为了增强对编程单元的检测，以比与非OTP存储器位置的写访问（407）相关联的读取电压更低的读取电压执行OTP存储器位置的读取，由此改进对编程的存储器单元的检测在OTP内存位置。

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