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    • 4. 发明申请
    • METHOD FOR MONITORING FOREIGN MATTER OF PLASMA TREATING DEVICE
    • 用于监测等离子体处理装置的外部事项的方法
    • WO1999024640A1
    • 1999-05-20
    • PCT/JP1997004119
    • 1997-11-12
    • HITACHI, LTD.TAKAHASHI, KazueTAMURA, TomoyukiNAWATA, Makoto
    • HITACHI, LTD.
    • C23F04/00
    • H01J37/32192H01J2237/022
    • In a method for monitoring foreign matters, a film thickness monitor is installed to a plasma treating device so as to control the foreign matters of the plasma treating device, and the deposited amount of a reaction product is found at every wafer, and then, an alarm is issued when the cumulative deposited amount of foreign matters reaches a previously found allowable value. A film thickness meter is installed to the plasma treating device as a foreign matter monitor and the occurrence of foreign matters is monitored from the deposited amount of the reaction product. Since the deposited amount of the reaction product which is directly related to the foreign matters can be measured, the cleaning timing of the plasma treating device can be predicted.
    • 在异物检测方法中,将膜厚监视器安装在等离子体处理装置中,以控制等离子体处理装置的异物,并且在每个晶片上发现反应产物的沉积量,然后, 当异物的累计存放量达到先前发现的允许值时发出报警。 作为异物监测器,将膜厚计安装在等离子体处理装置中,并从反应产物的沉积量监测异物的发生。 由于可以测量与异物直接相关的反应产物的沉积量,所以可以预测等离子体处理装置的清洗时间。