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    • 2. 发明授权
    • Method of making a semiconductor device having an improved metallization
structure
    • 制造具有改进的金属化结构的半导体器件的方法
    • US5225372A
    • 1993-07-06
    • US632696
    • 1990-12-24
    • Sunil W. SavkarEdward O. Travis
    • Sunil W. SavkarEdward O. Travis
    • H01L21/285H01L21/3205H01L21/768
    • H01L21/32051H01L21/28512H01L21/76889
    • An improved semiconductor device interconnect comprising a conductive layer (30) with an underlying diffusion barrier metal (26) is attached to a doped glass layer (20) by an intermediate metal adhesion layer (22). The metal adhesion layer (22) is deposited onto the doped glass layer (30) prior to the formation of contact openings (24) in the doped glass layer (30) and the subsequent formation of the interconnect metallization. In one embodiment, a titanium diffusion barrier (26) is deposited onto a doped glass layer (30) having an aluminum metal adhesion layer (22) thereon and contact openings (24) therethrough. The titanium is annealed to form a silicide (28) in a substrate region (14) exposed by the contact opening (24) and an aluminum interconnect (32) is formed contacting the silicide region (28).
    • 包括具有下面的扩散阻挡金属(26)的导电层(30)的改进的半导体器件互连通过中间金属粘合层(22)附着到掺杂的玻璃层(20)。 在掺杂的玻璃层(30)中形成接触开口(24)并随后形成互连金属化之后,将金属粘合层(22)沉积到掺杂的玻璃层(30)上。 在一个实施例中,在其上具有铝金属粘附层(22)的掺杂玻璃层(30)和穿过其中的接触开口(24)上沉积钛扩散阻挡层(26)。 将钛退火以在由接触开口(24)暴露的衬底区域(14)中形成硅化物(28),并且形成接触硅化物区域(28)的铝互连(32)。
    • 4. 发明授权
    • Method and apparatus for rapid computation of target addresses for
relative control transfer instructions
    • 用于快速计算相对控制传输指令的目标地址的方法和装置
    • US5860152A
    • 1999-01-12
    • US956251
    • 1997-10-22
    • Sunil W. Savkar
    • Sunil W. Savkar
    • G06F9/32
    • G06F9/324G06F9/322
    • A method and apparatus accepts a relative control transfer instruction and generates a compact absolute control transfer instruction which may have a number of bits one greater than the relative control transfer instruction and including flags to rapidly construct the target address of the relative control transfer instruction. The compact absolute control transfer instruction is generated by sign extending the displacement of the relative control transfer instructions and adding it to a set of least significant bits from the control transfer instruction address, and optionally coupling some or all of the bits from the result with the original opcode or a different opcode. The target address of the relative control transfer instruction is determined by using, incrementing or decrementing, depending on the state of the flags, a group of the most significant bits from the relative control transfer instruction address and appending the result with the least significant bits from the result of the addition described above.
    • 一种方法和装置接受相对控制传送指令,并产生紧密的绝对控制传送指令,该指令可以具有比相对控制传送指令大一位的位数,并且包括快速构建相对控制传送指令的目标地址的标志。 紧凑的绝对控制传送指令是通过扩展相对控制传送指令的位移并将其从控制传送指令地址添加到一组最低有效位的符号来产生的,并且可选地将结果中的一些或全部位与 原始操作码或不同的操作码。 相对控制传送指令的目标地址是根据标志的状态通过使用,递增或递减来确定的,来自相对控制传送指令地址的最高有效位组,并将结果与​​最低有效位相加 上述添加的结果。