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    • 2. 发明申请
    • Gas supply unit and semiconductor device manufacturing apparatus using the same
    • 气体供给单元和使用其的半导体装置制造装置
    • US20050016452A1
    • 2005-01-27
    • US10830603
    • 2004-04-23
    • Sung-Won RyuYeon-Sik Park
    • Sung-Won RyuYeon-Sik Park
    • H01L21/205C23C16/44C23C16/455C23C16/00
    • C23C16/45561C23C16/455C23C16/45557
    • A semiconductor device manufacturing apparatus is provided. The semiconductor device manufacturing apparatus comprises a furnace having a closed predetermined space for seating a wafer, a loading device located at one side of the furnace to load the wafer on which a prior process may have been performed, a gate valve interposed between the furnace and the loading device to selectively open/close a pathway between the furnace and the loading device, a heater for heating an interior of the furnace, a vacuum pump for maintaining the interior of the furnace with a suitable pressure necessary to the process, a gas reservoir for storing individually various kinds of reaction gases supplied from an exterior of the space, a gas mixing device connected to the gas reservoir to mix the various kinds of reaction gases supplied from the gas reservoir with an even mixing ratio, at least two mixed gases supply pipes connected to the gas mixing device to supply the reaction gases mixed in the gas mixing device to each direction of the furnace, and a mixed gases flow control unit installed at the mixed gases supply pipe to control the flow of the reaction gases supplied through the mixed gases supply pipe.
    • 提供一种半导体器件制造装置。 半导体器件制造装置包括具有用于固定晶片的封闭的预定空间的炉子,位于炉的一侧的装载装置,用于加载可能已经进行了先前工艺的晶片;插入在炉和 用于选择性地打开/关闭炉和装载装置之间的通道的加载装置,用于加热炉内部的加热器,用于以适当的压力保持炉内部的真空泵,气藏 用于单独存储从该空间外部供应的各种反应气体,连接到气体储存器的气体混合装置,以混合从气体储存器供应的各种反应气体,至少两种混合气体供应 连接到气体混合装置的管道将混合在气体混合装置中的反应气体供应到炉子的每个方向,以及混合气体 安装在混合气体供给管上的流量控制单元,以控制通过混合气体供给管供给的反应气体的流量。