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1. 发明授权

US08560901B2 Apparatus, method and memory device for error correction by increasing or decreasing a read voltage and analyzing frequency information for a read error pattern 有权
标题翻译：用于通过增加或减少读取电压并分析读取错误模式的频率信息进行纠错的装置，方法和存储装置
公开(公告)号：US08560901B2
公开(公告)日：2013-10-15
申请号：US12453813
申请日：2009-05-22
申请人： Kwang Soo Seol , Sung II Park , Kyoung Lae Cho
发明人： Kwang Soo Seol , Sung II Park , Kyoung Lae Cho
IPC分类号： G06F11/00 , G06F11/10
CPC分类号： G11C16/26 , G06F11/1072 , G11C11/5642 , G11C29/00 , G11C2211/5634
摘要： An error correction apparatus, a method thereof, and a memory device including the apparatus are provided. The error correction apparatus may include: a determination unit configured to determine whether a number of errors in a read word being read and extracted from a multi-level cell (MLC) exists in an error correcting capability range; a read voltage control unit configured to either increase or decrease a read voltage applied to the MLC when the number of errors in the read word is outside the error correcting capability range; and a codeword determination unit configured to analyze a bit error based on the increase or decrease of the read voltage, and to select a codeword corresponding to the analyzed bit error based on a selected read error pattern. Through this, it may be possible to efficiently correct a read error that occurs when the data of the memory device is maintained for a long time.
摘要翻译：提供了一种纠错装置，其方法和包括该装置的存储装置。误差校正装置可以包括：确定单元，被配置为确定从多级单元（MLC）读取和提取的读取字中的错误数是否存在于纠错能力范围内; 读取电压控制单元，被配置为当读取字中的错误数量超出纠错能力范围时，增加或减小施加到MLC的读取电压; 以及码字确定单元，被配置为基于读取电压的增加或减少来分析位错误，并且基于所选择的读取错误模式来选择与分析的位错误相对应的码字。通过这样，可以有效地校正当长时间保持存储器件的数据时发生的读取错误。

2. 发明申请

US20100302870A1 Nonvolatile memory device and method of operating and fabricating the same 失效
标题翻译：非易失性存储器件及其操作和制造方法
公开(公告)号：US20100302870A1
公开(公告)日：2010-12-02
申请号：US12805498
申请日：2010-08-03
申请人： Ki-ha Hong , Sung-hoon Lee , Jae-woong Hyun , Jai-kwang Shin , Young-gu Jin , Sung-iI Park , Jong-seob Kim
发明人： Ki-ha Hong , Sung-hoon Lee , Jae-woong Hyun , Jai-kwang Shin , Young-gu Jin , Sung-iI Park , Jong-seob Kim
IPC分类号： G11C16/04
CPC分类号： G11C16/16 , H01L27/115 , H01L27/11521 , H01L27/11524
摘要： Provided is a method of reliably operating a highly integratable nonvolatile memory device. The nonvolatile memory device may include a string selection transistor, a plurality of memory transistors, and a ground selection transistor between a bit line and a common source line. In the nonvolatile memory device, data may be erased from the memory transistors by applying an erasing voltage to the bit line or the common source line.
摘要翻译：提供了可靠地操作高度可积分的非易失性存储器件的方法。非易失性存储器件可以包括串选择晶体管，多个存储晶体管和位线和公共源极线之间的接地选择晶体管。在非易失性存储器件中，通过向位线或公共源极线施加擦除电压，可以从存储晶体管擦除数据。

3. 发明申请

US20080285353A1 Flash memory device, method of manufacturing the same, and method of operating the same 失效
标题翻译：闪存装置及其制造方法及其操作方法
公开(公告)号：US20080285353A1
公开(公告)日：2008-11-20
申请号：US12073681
申请日：2008-03-07
申请人： Sung-II Park , Sung-Hoon Lee , Kwang-Soo Seol , Young-Gu Jin , Jong-Seob Kim
发明人： Sung-II Park , Sung-Hoon Lee , Kwang-Soo Seol , Young-Gu Jin , Jong-Seob Kim
IPC分类号： G11C16/06 , H01L29/788 , H01L21/336
CPC分类号： H01L21/28282 , G11C16/349 , H01L27/11568 , H01L29/42332 , H01L29/42336 , H01L29/42348 , H01L29/42352 , H01L29/66833 , H01L29/792
摘要： Provided are a memory device, a method of manufacturing the same, and a method of operating the same. The memory device may include a channel region having an upper end where both sides of the upper end are curved, the curved portions of both sides allowing charges to be injected thereinto in a program or erase voltage such that the curved portions into which the charges are injected are separate from a portion which determines a threshold voltage, and a gate structure on the channel region.
摘要翻译：提供了一种存储器件及其制造方法及其操作方法。存储器件可以包括具有上端的上端弯曲的上端的通道区域，两侧的弯曲部分允许以编程或擦除电压将电荷注入其中，使得电荷的弯曲部分注入与确定阈值电压的部分和沟道区上的栅极结构分开。

4. 发明授权

US06781653B2 LCD device having a reflective electrode and a fabricating method thereof 有权
标题翻译：具有反射电极的LCD装置及其制造方法
公开(公告)号：US06781653B2
公开(公告)日：2004-08-24
申请号：US09785424
申请日：2001-02-20
申请人： Sung-II Park , Jae-Young Chung
发明人： Sung-II Park , Jae-Young Chung
IPC分类号： G02F11335
CPC分类号： G02F1/133553 , G02F1/136227
摘要： A method of fabricating a liquid crystal display device includes forming an embossed reflective electrode. In the method, the embossed reflective electrode is embossed via a dry-etching method with a mixture of SF6+O2 or CF4+O2 gases, or with oxygen gas, such that a plurality of small concave and convex portions are formed on the reflective electrode. Since the concave and convex portions of the reflective electrode diffuse light, high luminance and wide viewing angle can be achieved.
摘要翻译：制造液晶显示装置的方法包括形成压花反射电极。在该方法中，压花反射电极通过干法蚀刻法与SF6 + O2或CF4 + O2气体或氧气的混合物压印，使得在反射电极上形成多个小的凹凸部分。由于反射电极的凹凸部漫射光，可以实现高亮度和宽视角。

5. 发明授权

US09770404B2 Cosmetic composition for whitening and improving the resilience of skin 有权
公开(公告)号：US09770404B2
公开(公告)日：2017-09-26
申请号：US13988949
申请日：2011-11-21
申请人： Kuan Chi Hsu , Hyeon Chung Kim , Sung II Park , Youn Joon Kim , Sang Hoon Han
发明人： Kuan Chi Hsu , Hyeon Chung Kim , Sung II Park , Youn Joon Kim , Sang Hoon Han
IPC分类号： A61K8/97 , A61K8/65 , A61Q19/02 , A61Q19/08 , A61K8/73
CPC分类号： A61K8/97 , A61K8/65 , A61K8/73 , A61Q19/02 , A61Q19/08
摘要： The present invention relates to a cosmetic composition for skin whitening and anti-aging, which contains 2 or more of collagen peptides, snake needle grass extract, and white ginseng saccharides as effective ingredients, improves skin resilience by increasing the content of collagen in the skin and suppresses the growth of melanin cells, improves skin brightness and uniformity, and alleviates skin yellowness and redness, so as to provide the effect of making the skin appear clearer and more radiant.

6. 发明授权

US07995396B2 Methods of operating memory devices 有权
标题翻译：操作存储设备的方法
公开(公告)号：US07995396B2
公开(公告)日：2011-08-09
申请号：US12458294
申请日：2009-07-08
申请人： Kwang-soo Seol , Sung-II Park , Yoon-dong Park , Young-gu Jin , In-sung Joe
发明人： Kwang-soo Seol , Sung-II Park , Yoon-dong Park , Young-gu Jin , In-sung Joe
IPC分类号： G11C11/34
CPC分类号： G11C16/3454 , G11C11/5628 , G11C11/5642 , G11C16/0483 , G11C16/3418 , G11C16/3427 , G11C16/3459 , G11C2211/5621
摘要： Provided are methods of operating NAND nonvolatile memory devices. The operating methods include applying a read voltage or a verify voltage to a selected memory cell from among a plurality of memory cells of a cell string to verify or read a programmed state of the selected memory cell; applying a first pass voltage to non-selected memory cells closest to the selected memory cell of the cell string; applying a second pass voltage to second closest non-selected memory cells to the selected memory cell; and applying a third pass voltage to other non-selected memory cells, where the first pass voltage is less than each of the second and third pass voltages and the second pass voltage is greater than the third pass voltage.
摘要翻译：提供了操作NAND非易失性存储器件的方法。操作方法包括从单元串的多个存储单元中向所选存储单元施加读取电压或验证电压以验证或读取所选存储单元的编程状态; 对最靠近所述单元串的选定存储单元的未选择存储单元施加第一通过电压; 将第二通过电压施加到所选择的存储器单元的第二最近的未选择的存储器单元; 以及向其他未选择的存储单元施加第三通过电压，其中第一通过电压小于第二和第三通过电压中的每一个，并且第二通过电压大于第三通过电压。

7. 发明申请

US20110135773A1 COMPOSITION FOR EXTERNAL SKIN APPLICATION CONTAINING PINE KNOT EXTRACT AND METHOD FOR PREPARATION OF THE SAME 审中-公开
标题翻译：用于含有菠萝提取物的外用皮肤应用的组合物及其制备方法
公开(公告)号：US20110135773A1
公开(公告)日：2011-06-09
申请号：US13001010
申请日：2009-06-23
申请人： Ho Sik Rho , Sujong Kim , Eun Joo Kim , Eunjeong Moon , Gayoung Cho , Sung II Park , Youn Jun Kim , Duck Hee Kim , Han Kon Kim
发明人： Ho Sik Rho , Sujong Kim , Eun Joo Kim , Eunjeong Moon , Gayoung Cho , Sung II Park , Youn Jun Kim , Duck Hee Kim , Han Kon Kim
IPC分类号： A61K8/97 , A61Q19/08
CPC分类号： A61K8/97 , A61K8/0208 , A61Q19/08
摘要： Disclosed is a composition for external skin application for preventing skin aging comprising pine knot extract as an effective ingredient. The composition prevents and improves wrinkles through of skin cell proliferation and collagen biosynthesis, and may be widely applied in the field of skin beauty care and cosmetics.
摘要翻译：公开了一种用于防止皮肤老化的外用皮肤用组合物，其包含松果提取物作为有效成分。该组合物通过皮肤细胞增殖和胶原合成来预防和改善皱纹，并可广泛应用于皮肤美容护理和化妆品领域。

8. 发明授权

US06654087B2 Transflective liquid crystal display device 有权
标题翻译：透反式液晶显示装置
公开(公告)号：US06654087B2
公开(公告)日：2003-11-25
申请号：US09781541
申请日：2001-02-12
申请人： In-Duk Song , Sung-II Park , Jae-Young Chung
发明人： In-Duk Song , Sung-II Park , Jae-Young Chung
IPC分类号： G02F11333
CPC分类号： G02F1/133555 , G02F2001/133638
摘要： The present invention provides a transflective LCD device that has a common contrast ratio in both the transmissive mode and the reflective mode. It also discloses a transflective LCD device that has an equal luminance in both the transmissive mode and the reflective mode. The transflective LCD device includes first and second substrates; a transparent conductive electrode on the first substrate; a lower passivation layer on the transparent conductive electrode; a reflective electrode formed on the lower passivation layer, the reflective electrode including a transmitting hole; a first QWP (quarter wave plate) under the first substrate; a lower polarizer formed under the first QWP; a second QWP on the second substrate; an upper polarizer formed on the second QWVP; an upper passivation layer under the second substrate; a transparent common electrode under the upper passivation layer; a liquid crystal layer interposed between the first and second substrates; and a backlight device arranged below the second substrate.
摘要翻译：本发明提供一种在透射模式和反射模式中具有通用对比度的半透射型LCD装置。还公开了一种在透射模式和反射模式中具有相同亮度的透反射LCD装置。透反式LCD装置包括第一和第二基板; 在第一基板上的透明导电电极; 透明导电电极上的下钝化层; 形成在所述下钝化层上的反射电极，所述反射电极包括透光孔; 第一基板下的第一QWP（四分之一波片）; 在第一QWP下形成的下偏光片; 第二基板上的第二QWP; 形成在第二QWVP上的上偏振器; 在第二衬底下方的上钝化层; 上钝化层下的透明公共电极; 介于所述第一和第二基板之间的液晶层; 以及布置在第二基板下方的背光装置。

9. 发明授权

US08301978B2 Memory device and method of storing data with error correction using codewords 有权
标题翻译：使用码字进行纠错的存储装置和存储数据的方法
公开(公告)号：US08301978B2
公开(公告)日：2012-10-30
申请号：US12453814
申请日：2009-05-22
申请人： Kwang Soo Seol , Sung II Park , Kyoung Lae Cho , In Sung Joe
发明人： Kwang Soo Seol , Sung II Park , Kyoung Lae Cho , In Sung Joe
IPC分类号： G11C29/00
CPC分类号： H03M13/611 , G06F11/1072 , G11C7/1006 , G11C11/5642 , G11C16/26 , G11C29/00 , H03M13/13 , H03M13/15 , H03M13/27 , H03M13/2732 , H03M13/2906 , H03M13/3707 , H03M13/3715 , H03M13/47
摘要： Memory devices and/or methods of storing memory data bits are provided. A memory device includes a multi-level cell (MLC) array including a plurality of MLCs, an error correction unit configured to encode data to be recorded in an MLC, where the encoded data is converted to convert the encoded data into a codeword, an error pattern analysis unit configured to analyze a first data pattern included in the codeword corresponding to an error pattern included in the codeword and a data conversion unit configured to convert the analyzed first data pattern into a second data pattern. According to the above memory devices and/or methods, it is possible to efficiently reduce a data error that occurs when the data is stored for a relatively long period of time, thereby improving reliability.
摘要翻译：提供了存储器件和/或存储存储器数据位的方法。存储器件包括包括多个MLC的多电平单元（MLC）阵列，纠错单元，被配置为编码要记录在MLC中的数据，其中编码数据被转换以将编码数据转换为码字，错误模式分析单元，被配置为分析与包括在码字中的错误模式相对应的码字中包含的第一数据模式;以及数据转换单元，被配置为将分析的第一数据模式转换为第二数据模式。根据上述存储器件和/或方法，可以有效地减少在数据存储较长时间段时发生的数据错误，从而提高可靠性。

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