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    • 2. 发明申请
    • METHOD FOR POLISHING A SEMICONDUCTOR WAFER
    • 抛光半导体波长的方法
    • US20070232209A1
    • 2007-10-04
    • US11753893
    • 2007-05-25
    • Jae-Phil BooJun-Gyu RyuSang-Seon LeeSun-Wung Lee
    • Jae-Phil BooJun-Gyu RyuSang-Seon LeeSun-Wung Lee
    • B24B19/00
    • B24B37/30B24B37/32H01L21/304
    • An apparatus for polishing a wafer comprises a supporting portion having an abrasive pad disposed thereon, and a polishing head disposed over the abrasive pad. The polishing head comprises a carrier having at least two fluid passages, a retainer ring disposed on a lower edge of the carrier, forming a space for receiving the wafer, a supporter disposed in the carrier, and a flexible membrane disposed to be in contact with the wafer. The supporter has an upper surface portion, a lower surface portion, a plurality of first holes, a plurality of second holes, and a first chamber. The upper surface portion of the supporter forms a second chamber along with an inner surface of the carrier. The second chamber is in communication with one of the two fluid passages of the carrier and the second holes are formed in a lower surface portion of the supporter to communicate with the second chamber. The first chamber is in communication with the other one of the two fluid passages and the first holes are formed in the lower surface portion of the supporter to communicate with the first chamber. The lower surface portion of the supporter has a flat surface and a chamfered or rounded edge. The membrane disposed to enclose the lower surface portion of the supporter has a plurality of third holes formed at positions corresponding to the first holes to absorb and hold the wafer by vacuum.
    • 用于抛光晶片的装置包括具有设置在其上的研磨垫的支撑部分和设置在研磨垫上方的抛光头。 抛光头包括具有至少两个流体通道的载体,设置在载体的下边缘上的保持环,形成用于接收晶片的空间,设置在载体中的支撑体和设置成与载体接触的柔性膜 晶圆。 支撑体具有上表面部分,下表面部分,多个第一孔,多个第二孔和第一室。 支撑件的上表面部分与载体的内表面一起形成第二室。 第二室与载体的两个流体通道中的一个连通,并且第二孔形成在支撑件的下表面部分中以与第二室连通。 第一室与两个流体通道中的另一个连通,并且第一孔形成在支撑件的下表面部分中以与第一室连通。 支撑体的下表面部分具有平坦表面和倒角或圆形边缘。 设置成包围支撑体的下表面部分的膜具有形成在与第一孔对应的位置处的多个第三孔,以通过真空吸收和保持晶片。
    • 3. 发明授权
    • Apparatus for polishing a semiconductor wafer and method therefor
    • 用于研磨半导体晶片的装置及其方法
    • US06921323B2
    • 2005-07-26
    • US10670855
    • 2003-09-25
    • Jae-Phil BooJun-Gyu RyuSang-Seon LeeSun-Wung Lee
    • Jae-Phil BooJun-Gyu RyuSang-Seon LeeSun-Wung Lee
    • B24B37/005B24B37/30H01L21/304B24B49/00
    • B24B37/30B24B37/32H01L21/304
    • An apparatus for polishing a wafer comprises a supporting portion having an abrasive pad disposed thereon, and a polishing head disposed over the abrasive pad. The polishing head comprises a carrier having at least two fluid passages, a retainer ring disposed on a lower edge of the carrier, forming a space for receiving the wafer, a supporter disposed in the carrier, and a flexible membrane disposed to be in contact with the wafer. The supporter has an upper surface portion, a lower surface portion, a plurality of first holes, a plurality of second holes, and a first chamber. The upper surface portion of the supporter forms a second chamber along with an inner surface of the carrier. The second chamber is in communication with one of the two fluid passages of the carrier and the second holes are formed in a lower surface portion of the supporter to communicate with the second chamber. The first chamber is in communication with the other one of the two fluid passages and the first holes are formed in the lower surface portion of the supporter to communicate with the first chamber. The lower surface portion of the supporter has a flat surface and a chamfered or rounded edge. The membrane disposed to enclose the lower surface portion of the supporter has a plurality of third holes formed at positions corresponding to the first holes to absorb and hold the wafer by vacuum.
    • 用于抛光晶片的装置包括具有设置在其上的研磨垫的支撑部分和设置在研磨垫上方的抛光头。 抛光头包括具有至少两个流体通道的载体,设置在载体的下边缘上的保持环,形成用于接收晶片的空间,设置在载体中的支撑体和设置成与载体接触的柔性膜 晶圆。 支撑体具有上表面部分,下表面部分,多个第一孔,多个第二孔和第一室。 支撑件的上表面部分与载体的内表面一起形成第二室。 第二室与载体的两个流体通道中的一个连通,并且第二孔形成在支撑件的下表面部分中以与第二室连通。 第一室与两个流体通道中的另一个连通,并且第一孔形成在支撑件的下表面部分中以与第一室连通。 支撑体的下表面部分具有平坦表面和倒角或圆形边缘。 设置成包围支撑体的下表面部分的膜具有形成在与第一孔对应的位置处的多个第三孔,以通过真空吸收和保持晶片。
    • 7. 发明授权
    • Apparatus for polishing a semiconductor wafer and method therefor
    • US06652362B2
    • 2003-11-25
    • US09877922
    • 2001-06-07
    • Jae-Phil BooJun-Gyu RyuSang-Seon LeeSun-Wung Lee
    • Jae-Phil BooJun-Gyu RyuSang-Seon LeeSun-Wung Lee
    • B24B4900
    • B24B37/30B24B37/32H01L21/304
    • An apparatus for polishing a wafer comprises a supporting portion having an abrasive pad disposed thereon, and a polishing head disposed over the abrasive pad. The polishing head comprises a carrier having at least two fluid passages, a retainer ring disposed on a lower edge of the carrier, forming a space for receiving the wafer, a supporter disposed in the carrier, and a flexible membrane disposed to be in contact with the wafer. The supporter has an upper surface portion, a lower surface portion, a plurality of first holes, a plurality of second holes, and a first chamber. The upper surface portion of the supporter forms a second chamber along with an inner surface of the carrier. The second chamber is in communication with one of the two fluid passages of the carrier and the second holes are formed in a lower surface portion of the supporter to communicate with the second chamber. The first chamber is in communication with the other one of the two fluid passages and the first holes are formed in the lower surface portion of the supporter to communicate with the first chamber. The lower surface portion of the supporter has a flat surface and a chamfered or rounded edge. The membrane disposed to enclose the lower surface portion of the supporter has a plurality of third holes formed at positions corresponding to the first holes to absorb and hold the wafer by vacuum.
    • 8. 发明授权
    • Method for fabricating MOS transistor using selective silicide process
    • 使用选择性硅化物工艺制造MOS晶体管的方法
    • US06383882B1
    • 2002-05-07
    • US09860591
    • 2001-05-21
    • Sun-wung LeeJae-phil BooKyung-hyun KimChang-ki Hong
    • Sun-wung LeeJae-phil BooKyung-hyun KimChang-ki Hong
    • H01L21336
    • H01L21/823468H01L21/28052H01L21/28114H01L21/823425H01L21/823443
    • A method for fabricating a MOS transistor using a selective silicide process wherein a gate insulating layer and a gate polysilicon layer are sequentially formed on a silicon substrate, and a gate spacer is formed on a side wall of the gate insulating layer and the gate polysilicon layer. Impurity ions are implanted and diffused using the gate spacer and the gate polysilicon layer as a mask layer to form a source/drain region in the substrate. An etching blocking layer is formed to cover the source/drain region, the gate spacer, and the gate polysilicon layer, and then, a dielectric layer to cover the etching blocking layer is formed. The dielectric layer is planarized, and the etching blocking layer on the gate polysilicon layer is exposed. The exposed etching blocking layer and a part of the gate spacer are etched, and a top surface and a top side of the gate polysilicon layer are exposed. A silicide layer is formed over the exposed part of the gate polysilicon layer.
    • 一种使用选择性硅化物工艺制造MOS晶体管的方法,其中在硅衬底上依次形成栅极绝缘层和栅极多晶硅层,并且栅极间隔物形成在栅极绝缘层和栅极多晶硅层的侧壁上 。 使用栅极间隔物和栅极多晶硅层作为掩模层注入和扩散杂质离子,以在衬底中形成源极/漏极区域。 形成蚀刻阻挡层以覆盖源极/漏极区域,栅极间隔物和栅极多晶硅层,然后形成覆盖蚀刻阻挡层的电介质层。 介电层被平坦化,并且露出栅极多晶硅层上的蚀刻阻挡层。 蚀刻暴露的蚀刻阻挡层和栅极间隔物的一部分,并且露出栅极多晶硅层的顶表面和顶侧。 在栅极多晶硅层的暴露部分上形成硅化物层。
    • 9. 发明授权
    • Method for polishing a semiconductor wafer
    • 抛光半导体晶片的方法
    • US07223158B2
    • 2007-05-29
    • US11326555
    • 2006-01-05
    • Jae-Phil BooJun-Gyu RyuSang-Seon LeeSun-Wung Lee
    • Jae-Phil BooJun-Gyu RyuSang-Seon LeeSun-Wung Lee
    • B24B49/00
    • B24B37/30B24B37/32H01L21/304
    • An apparatus for polishing a wafer comprises a supporting portion having an abrasive pad disposed thereon, and a polishing head disposed over the abrasive pad. The polishing head comprises a carrier having at least two fluid passages, a retainer ring disposed on a lower edge of the carrier, forming a space for receiving the wafer, a supporter disposed in the carrier, and a flexible membrane disposed to be in contact with the wafer. The supporter has an upper surface portion, a lower surface portion, a plurality of first holes, a plurality of second holes, and a first chamber. The upper surface portion of the supporter forms a second chamber along with an inner surface of the carrier. The second chamber is in communication with one of the two fluid passages of the carrier and the second holes are formed in a lower surface portion of the supporter to communicate with the second chamber. The first chamber is in communication with the other one of the two fluid passages and the first holes are formed in the lower surface portion of the supporter to communicate with the first chamber. The lower surface portion of the supporter has a flat surface and a chamfered or rounded edge. The membrane disposed to enclose the lower surface portion of the supporter has a plurality of third holes formed at positions corresponding to the first holes to absorb and hold the wafer by vacuum.
    • 用于抛光晶片的装置包括具有设置在其上的研磨垫的支撑部分和设置在研磨垫上方的抛光头。 抛光头包括具有至少两个流体通道的载体,设置在载体的下边缘上的保持环,形成用于接收晶片的空间,设置在载体中的支撑体和设置成与载体接触的柔性膜 晶圆。 支撑体具有上表面部分,下表面部分,多个第一孔,多个第二孔和第一室。 支撑件的上表面部分与载体的内表面一起形成第二室。 第二室与载体的两个流体通道中的一个连通,并且第二孔形成在支撑件的下表面部分中以与第二室连通。 第一室与两个流体通道中的另一个连通,并且第一孔形成在支撑件的下表面部分中以与第一室连通。 支撑体的下表面部分具有平坦表面和倒角或圆形边缘。 设置成包围支撑体的下表面部分的膜具有形成在与第一孔对应的位置处的多个第三孔,以通过真空吸收和保持晶片。
    • 10. 发明申请
    • Apparatus and methods for polishing a semiconductor wafer
    • 用于抛光半导体晶片的装置和方法
    • US20060116056A1
    • 2006-06-01
    • US11326555
    • 2006-01-05
    • Jae-Phil BooJun-Gyu RyuSang-Seon LeeSun-Wung Lee
    • Jae-Phil BooJun-Gyu RyuSang-Seon LeeSun-Wung Lee
    • B24B1/00B24B7/30B24B29/00
    • B24B37/30B24B37/32H01L21/304
    • An apparatus for polishing a wafer comprises a supporting portion having an abrasive pad disposed thereon, and a polishing head disposed over the abrasive pad. The polishing head comprises a carrier having at least two fluid passages, a retainer ring disposed on a lower edge of the carrier, forming a space for receiving the wafer, a supporter disposed in the carrier, and a flexible membrane disposed to be in contact with the wafer. The supporter has an upper surface portion, a lower surface portion, a plurality of first holes, a plurality of second holes, and a first chamber. The upper surface portion of the supporter forms a second chamber along with an inner surface of the carrier. The second chamber is in communication with one of the two fluid passages of the carrier and the second holes are formed in a lower surface portion of the supporter to communicate with the second chamber. The first chamber is in communication with the other one of the two fluid passages and the first holes are formed in the lower surface portion of the supporter to communicate with the first chamber. The lower surface portion of the supporter has a flat surface and a chamfered or rounded edge. The membrane disposed to enclose the lower surface portion of the supporter has a plurality of third holes formed at positions corresponding to the first holes to absorb and hold the wafer by vacuum.
    • 用于抛光晶片的装置包括具有设置在其上的研磨垫的支撑部分和设置在研磨垫上方的抛光头。 抛光头包括具有至少两个流体通道的载体,设置在载体的下边缘上的保持环,形成用于接收晶片的空间,设置在载体中的支撑体和设置成与载体接触的柔性膜 晶圆。 支撑体具有上表面部分,下表面部分,多个第一孔,多个第二孔和第一室。 支撑件的上表面部分与载体的内表面一起形成第二室。 第二室与载体的两个流体通道中的一个连通,并且第二孔形成在支撑件的下表面部分中以与第二室连通。 第一室与两个流体通道中的另一个连通,并且第一孔形成在支撑件的下表面部分中以与第一室连通。 支撑体的下表面部分具有平坦表面和倒角或圆形边缘。 设置成包围支撑体的下表面部分的膜具有形成在与第一孔对应的位置处的多个第三孔,以通过真空吸收和保持晶片。