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    • 1. 发明授权
    • High voltage comparator using sliding input low voltage devices
    • 高压比较器采用滑动输入低电压器件
    • US07528634B2
    • 2009-05-05
    • US11427033
    • 2006-06-28
    • Sumer Can
    • Sumer Can
    • H03F3/45
    • H03K5/2481
    • A voltage comparator contains low voltage devices (e.g., bipolar or MOS transistors) and high voltage devices (e.g., DMOS transistors). The low voltage devices, which cannot sustain a voltage greater than a relatively small range of variation that is substantially less than the range of potential variation of the input voltage, are connected in a differential amplifier configuration to perform precision differential measurements on the input voltage. The high voltage devices are interconnected with the low voltage devices in a manner that enables operating levels of the low voltage devices to move up/down, or ‘slide’, with variations in the input voltage, so that the low voltage devices are effectively immune to high levels of the input voltage.
    • 电压比较器包含低电压器件(例如双极或MOS晶体管)和高电压器件(例如,DMOS晶体管)。 不能承受比实质上小于输入电压的电位变化范围的相对小的变化范围的电压的低电压器件被连接在差分放大器配置中以对输入电压进行精密差分测量。 高压器件与低电压器件互连,使得低电压器件的工作电平随着输入电压的变化而上下移动或“滑动”,使得低电压器件被有效地免疫 到高电平的输入电压。
    • 2. 发明申请
    • High Voltage Comparator Using Sliding Input Low Voltage Devices
    • 高压比较器使用滑动输入低电压器件
    • US20080001636A1
    • 2008-01-03
    • US11427033
    • 2006-06-28
    • Sumer Can
    • Sumer Can
    • H03K5/22
    • H03K5/2481
    • A voltage comparator contains low voltage devices (e.g., bipolar or MOS transistors) and high voltage devices (e.g., DMOS transistors). The low voltage devices, which cannot sustain a voltage greater than a relatively small range of variation that is substantially less than the range of potential variation of the input voltage, are connected in a differential amplifier configuration to perform precision differential measurements on the input voltage. The high voltage devices are interconnected with the low voltage devices in a manner that enables operating levels of the low voltage devices to move up/down, or ‘slide’, with variations in the input voltage, so that the low voltage devices are effectively immune to high levels of the input voltage.
    • 电压比较器包含低电压器件(例如双极或MOS晶体管)和高电压器件(例如,DMOS晶体管)。 不能承受比实质上小于输入电压的电位变化范围的相对小的变化范围的电压的低电压器件被连接在差分放大器配置中以对输入电压进行精密差分测量。 高压器件与低电压器件互连,使得低电压器件的工作电平随着输入电压的变化而上下移动或“滑动”,使得低电压器件被有效地免疫 到高电平的输入电压。
    • 4. 发明授权
    • High voltage differential amplifier using low voltage devices
    • 高压差分放大器采用低压器件
    • US06965266B1
    • 2005-11-15
    • US10775469
    • 2004-02-10
    • Sumer Can
    • Sumer Can
    • H03F3/45
    • H03F3/45121
    • A high voltage differential amplifier including an input differential pair of low voltage transistors, a sense differential pair of low voltage transistors, first and second high voltage transistors, a low voltage bias transistor, a cascaded pair of low voltage transistors, and an output pair of high voltage transistors. The sense differential pair has a pair of control terminals that detect a common mode voltage of the differential input signal, and establishes a sense node which follows the common mode voltage. The first high voltage device is coupled to the sense node to establish bias node voltage levels which track the common mode voltage, including an output bias node biasing the output pair and a cascade bias node biasing the cascaded pair. In this manner, the terminals of the low voltage devices slide up or down with the common mode voltage and are protected from high voltage levels.
    • 一种高电压差分放大器,包括低压晶体管的输入差分对,低压晶体管的感测差分对,第一和第二高压晶体管,低压偏置晶体管,级联的一对低压晶体管,以及输出对 高压晶体管。 感测差分对具有检测差分输入信号的共模电压的一对控制端子,并建立跟随共模电压的感测节点。 第一高压器件耦合到感测节点以建立跟踪共模电压的偏置节点电压电平,包括偏置输出对的输出偏置节点和偏置级联对的级联偏置节点。 以这种方式,低压装置的端子以共模电压上下滑动并被保护而不受高电压电平的影响。
    • 8. 发明授权
    • Bandgap reference voltage circuit with PTAT current source
    • 带PTAT电流源的带隙基准电压电路
    • US6016051A
    • 2000-01-18
    • US163806
    • 1998-09-30
    • Sumer Can
    • Sumer Can
    • G05F3/30G05F3/16
    • G05F3/30Y10S323/907
    • A bandgap reference circuit capable of operating at low voltage provides an adjustable bandgap reference voltage. The bandgap reference circuit includes a proportional to absolute temperature (PTAT) current source, a bias current source, two resistors and a transistor. The base of the transistor couples to the IPTAT current source and the emitter of the transistor couples to the bias current source. The bandgap reference circuit also includes two resistors. The first resistor couples between the emitter and the base of the transistor, and the second resistor couples to the base of the transistor. The first resistor receives a portion of the bias current and provides a current proportional to a base-emitter voltage of the transistor. The second resistor receives the PTAT current and the current proportional to the base-emitter voltage of the transistor and provides a reference voltage which remains substantially constant over temperature and which is proportional to a silicon bandgap voltage. The ratio of the first and second resistors determines the proportionality of the reference voltage to the silicon bandgap voltage. Thus, by adjusting the ratio of the two resistors a reference voltage less than the silicon bandgap voltage can be obtained.
    • 能够以低电压工作的带隙参考电路提供可调节的带隙基准电压。 带隙参考电路包括与绝对温度(PTAT)电流源成比例的偏置电流源,两个电阻和一个晶体管。 晶体管的基极耦合到IPTAT电流源,晶体管的发射极耦合到偏置电流源。 带隙基准电路还包括两个电阻。 第一个电阻耦合在晶体管的发射极和基极之间,第二个电阻耦合到晶体管的基极。 第一电阻器接收偏置电流的一部分并且提供与晶体管的基极 - 发射极电压成比例的电流。 第二电阻器接收PTAT电流和与晶体管的基极 - 发射极电压成比例的电流,并提供在温度下保持基本恒定的参考电压,并且其与硅带隙电压成比例。 第一和第二电阻器的比率决定了参考电压与硅带隙电压的比例。 因此,通过调整两个电阻的比例,可以获得小于硅带隙电压的参考电压。