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1. 发明授权

US08674340B2 Nitride semiconductor light emitting device and fabrication method thereof 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US08674340B2
公开(公告)日：2014-03-18
申请号：US13585451
申请日：2012-08-14
申请人： Suk Hun Lee
发明人： Suk Hun Lee
IPC分类号： H01L29/06
CPC分类号： H01L33/14 , H01L27/15 , H01L33/02 , H01L33/025 , H01L33/06 , H01L33/305 , H01L33/32
摘要： Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to the present invention, the optical power of the nitride semiconductor light emitting device is enhanced, optical power down phenomenon is improved and reliability against ESD (electro static discharge) is enhanced.
摘要翻译：提供一种氮化物半导体发光器件，包括：第一氮化物半导体层; 形成在所述第一氮化物半导体层上方的有源层; 以及形成在有源层上方的δ掺杂的第二氮化物半导体层。根据本发明，提高了氮化物半导体发光元件的光功率，提高了光功率降低现象，提高了ESD（静电放电）的可靠性。

2. 发明授权

US08558258B2 Nitride semiconductor light emitting device and fabrication method thereof 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US08558258B2
公开(公告)日：2013-10-15
申请号：US13524688
申请日：2012-06-15
申请人： Suk Hun Lee
发明人： Suk Hun Lee
IPC分类号： H01L33/20
CPC分类号： H01L33/007 , H01L33/12
摘要： The present invention relates to a nitride semiconductor light emitting device including: a substrate having a predetermined pattern formed on a surface thereof by an etch; a protruded portion disposed on a non-etched region of the substrate, and having a first buffer layer and a first nitride semiconductor layer stacked thereon; a second buffer layer formed on the etched region of the substrate; a second nitride semiconductor layer formed on the second buffer layer and the protruded portion; a third nitride semiconductor layer formed on the second nitride semiconductor layer; an active layer formed on the third nitride semiconductor layer to emit light; and a fourth nitride semiconductor layer formed on the active layer. According to the present invention, the optical extraction efficiency of the nitride semiconductor light emitting device can be enhanced.
摘要翻译：本发明涉及一种氮化物半导体发光器件，包括：具有通过蚀刻形成在其表面上的预定图案的衬底; 突出部，设置在所述基板的未蚀刻区域上，并且具有堆叠在其上的第一缓冲层和第一氮化物半导体层; 形成在所述基板的所述蚀刻区域上的第二缓冲层; 形成在第二缓冲层和突出部分上的第二氮化物半导体层; 形成在所述第二氮化物半导体层上的第三氮化物半导体层; 形成在所述第三氮化物半导体层上以发光的有源层; 以及形成在所述有源层上的第四氮化物半导体层。根据本发明，能够提高氮化物半导体发光元件的光学提取效率。

3. 发明申请

US20120248411A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20120248411A1
公开(公告)日：2012-10-04
申请号：US13524688
申请日：2012-06-15
申请人： SUK HUN LEE
发明人： SUK HUN LEE
IPC分类号： H01L33/04
CPC分类号： H01L33/007 , H01L33/12
摘要： The present invention relates to a nitride semiconductor light emitting device including: a substrate having a predetermined pattern formed on a surface thereof by an etch; a protruded portion disposed on a non-etched region of the substrate, and having a first buffer layer and a first nitride semiconductor layer stacked thereon; a second buffer layer formed on the etched region of the substrate; a second nitride semiconductor layer formed on the second buffer layer and the protruded portion; a third nitride semiconductor layer formed on the second nitride semiconductor layer; an active layer formed on the third nitride semiconductor layer to emit light; and a fourth nitride semiconductor layer formed on the active layer. According to the present invention, the optical extraction efficiency of the nitride semiconductor light emitting device can be enhanced.
摘要翻译：本发明涉及一种氮化物半导体发光器件，包括：具有通过蚀刻形成在其表面上的预定图案的衬底; 突出部，设置在所述基板的未蚀刻区域上，并且具有堆叠在其上的第一缓冲层和第一氮化物半导体层; 形成在所述基板的所述蚀刻区域上的第二缓冲层; 形成在第二缓冲层和突出部分上的第二氮化物半导体层; 形成在所述第二氮化物半导体层上的第三氮化物半导体层; 形成在所述第三氮化物半导体层上以发光的有源层; 以及形成在所述有源层上的第四氮化物半导体层。根据本发明，能够提高氮化物半导体发光元件的光学提取效率。

4. 发明授权

US08044380B2 Nitride semiconductor light emitting device and fabrication method thereof 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US08044380B2
公开(公告)日：2011-10-25
申请号：US11722670
申请日：2005-12-05
申请人： Suk Hun Lee
发明人： Suk Hun Lee
IPC分类号： H01L29/00
CPC分类号： H01L33/14 , H01L33/025 , H01L33/325
摘要： Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a “C (carbon)”-doped second nitride semiconductor layer formed above the active layer. According to the present invention, the crystallinity of the active layer is enhanced, and the optical power and the operation reliability are enhanced.
摘要翻译：提供一种氮化物半导体发光器件，包括：第一氮化物半导体层; 形成在所述第一氮化物半导体层上方的有源层; 和在有源层上形成的“C（碳）”掺杂的第二氮化物半导体层。根据本发明，提高了有源层的结晶度，提高了光功率和操作可靠性。

5. 发明授权

US07847279B2 Nitride semiconductor LED and fabrication method thereof 有权
标题翻译：氮化物半导体LED及其制造方法
公开(公告)号：US07847279B2
公开(公告)日：2010-12-07
申请号：US11718664
申请日：2005-07-06
申请人： Suk Hun Lee
发明人： Suk Hun Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/14 , H01L33/36
摘要： A nitride semiconductor light emitting diode according to the present invention, includes: a substrate; a buffer layer formed on the substrate; an In-doped GaN layer formed on the buffer layer; a first electrode layer formed on the In-doped GaN layer; an InxGa1-xN layer formed on the first electrode layer; an active layer formed on the InxGa1-xN layer; a first P—GaN layer formed on the active layer; a second electrode layer formed on the first P—GaN layer; a second P—GaN layer partially protruded on the second electrode layer; and a third electrode formed on the second P—GaN layer.
摘要翻译：根据本发明的氮化物半导体发光二极管包括：基板; 形成在所述基板上的缓冲层; 形成在缓冲层上的In掺杂GaN层; 形成在In掺杂GaN层上的第一电极层; 形成在所述第一电极层上的In x Ga 1-x N层; 形成在In x Ga 1-x N层上的有源层; 形成在有源层上的第一P-GaN层; 形成在所述第一P-GaN层上的第二电极层; 在第二电极层上部分地突出的第二P-GaN层; 以及形成在第二P-GaN层上的第三电极。

6. 发明申请

US20100289002A1 Nitride Semiconductor Light Emitting Device and Fabrication Method Thereof 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20100289002A1
公开(公告)日：2010-11-18
申请号：US12849265
申请日：2010-08-03
申请人： Suk Hun Lee
发明人： Suk Hun Lee
IPC分类号： H01L33/04 , H01L33/30
CPC分类号： H01L33/14 , H01L27/15 , H01L33/02 , H01L33/025 , H01L33/06 , H01L33/305 , H01L33/32
摘要： Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to the present invention, the optical power of the nitride semiconductor light emitting device is enhanced, optical power down phenomenon is improved and reliability against ESD (electro static discharge) is enhanced.
摘要翻译：提供一种氮化物半导体发光器件，包括：第一氮化物半导体层; 形成在所述第一氮化物半导体层上方的有源层; 以及形成在有源层上方的δ掺杂的第二氮化物半导体层。根据本发明，提高了氮化物半导体发光元件的光功率，提高了光功率降低现象，提高了ESD（静电放电）的可靠性。

7. 发明授权

US07808010B2 Nitride semiconductor light emitting device and fabrication method thereof 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US07808010B2
公开(公告)日：2010-10-05
申请号：US11661185
申请日：2005-08-19
申请人： Suk Hun Lee
发明人： Suk Hun Lee
IPC分类号： H01L33/00 , H01L29/06
CPC分类号： H01L33/32 , H01L33/02 , H01L33/025 , H01L33/06 , H01L33/26
摘要： A nitride semiconductor light emitting device comprises a first nitride semiconductor layer, an active layer of a single or multiple quantum well structure formed on the first nitride semiconductor layer and including an InGaN well layer and a multilayer barrier layer, and a second nitride semiconductor layer formed on the active layer. A fabrication method of a nitride semiconductor light emitting device comprises: forming a buffer layer on a substrate, forming a GaN layer on the buffer layer, forming a first electrode layer on the GaN layer, forming an InxGa1-xN layer on the first electrode layer, forming on the first InxGa1-xN layer an active layer including an InGaN well layer and a multilayer barrier layer for emitting light, forming a p-GaN layer on the active layer, and forming a second electrode layer on the p-GaN layer.
摘要翻译：氮化物半导体发光器件包括第一氮化物半导体层，形成在第一氮化物半导体层上并包括InGaN阱层和多层势垒层的单个或多个量子阱结构的有源层和形成的第二氮化物半导体层在活动层。氮化物半导体发光器件的制造方法包括：在衬底上形成缓冲层，在缓冲层上形成GaN层，在GaN层上形成第一电极层，在第一电极层上形成In x Ga 1-x N层在第一In x Ga 1-x N层上形成包括InGaN阱层的有源层和用于发光的多层势垒层，在有源层上形成p-GaN层，并在p-GaN层上形成第二电极层。

8. 发明申请

US20090072220A1 Nitride Semiconductor LED and Fabrication Method Thereof 有权
标题翻译：氮化物半导体LED及其制作方法
公开(公告)号：US20090072220A1
公开(公告)日：2009-03-19
申请号：US11718664
申请日：2005-07-06
申请人： Suk Hun Lee
发明人： Suk Hun Lee
IPC分类号： H01L33/00 , H01L21/18
CPC分类号： H01L33/32 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/14 , H01L33/36
摘要： A nitride semiconductor light emitting diode according to the present invention, includes: a substrate; a buffer layer formed on the substrate; an In-doped GaN layer formed on the buffer layer; a first electrode layer formed on the In-doped GaN layer; an InxGa1−xN layer formed on the first electrode layer; an active layer formed on the InxGa1−xN layer; a first P-GaN layer formed on the active layer; a second electrode layer formed on the first P-GaN layer; a second P-GaN layer partially protruded on the second electrode layer; and a third electrode formed on the second P-GaN layer.
摘要翻译：根据本发明的氮化物半导体发光二极管包括：基板; 形成在所述基板上的缓冲层; 形成在缓冲层上的In掺杂GaN层; 形成在In掺杂GaN层上的第一电极层; 形成在所述第一电极层上的In x Ga 1-x N层; 形成在In x Ga 1-x N层上的有源层; 形成在有源层上的第一P-GaN层; 形成在所述第一P-GaN层上的第二电极层; 在第二电极层上部分地突出的第二P-GaN层; 以及形成在第二P-GaN层上的第三电极。

9. 发明申请

US20080135829A1 Nitride Semiconductor Light Emitting Device and Fabrication Method Thereof 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20080135829A1
公开(公告)日：2008-06-12
申请号：US11722670
申请日：2005-12-05
申请人： Suk Hun Lee
发明人： Suk Hun Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/025 , H01L33/325
摘要： Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a “C (carbon)”-doped second nitride semiconductor layer formed above the active layer. According to the present invention, the crystallinity of the active layer is enhanced, and the optical power and the operation reliability are enhanced.
摘要翻译：提供一种氮化物半导体发光器件，包括：第一氮化物半导体层; 形成在所述第一氮化物半导体层上方的有源层; 和在有源层上形成的“C（碳）”掺杂的第二氮化物半导体层。根据本发明，提高了有源层的结晶度，提高了光功率和操作可靠性。

10. 发明授权

US06656823B2 Semiconductor device with schottky contact and method for forming the same 失效
标题翻译：具有肖特基接触的半导体器件及其形成方法
公开(公告)号：US06656823B2
公开(公告)日：2003-12-02
申请号：US09809163
申请日：2001-03-16
申请人： Suk Hun Lee , Yong Hyun Lee , Jung Hee Lee , Sung Ho Hahm
发明人： Suk Hun Lee , Yong Hyun Lee , Jung Hee Lee , Sung Ho Hahm
IPC分类号： H01L2128
CPC分类号： H01L29/475 , H01L21/28581 , H01L29/2003 , H01L29/812 , H01L29/8128 , H01L29/872
摘要： Method for forming a Schottky contact in a semiconductor device includes a step of preparing an n type GaN group compound semiconductor layer, such as AlxGa1-xN and InxGa1-xN. At least one metal layer including a ruthenium component layer is formed on the n type GaN group compound semiconductor layer as a rectifying junction metal. The rectifying junction metal may be used as a gate of a field effect transistor, or an electrode of a Schottky diode. The ruthenium oxide has a low cost, is stable to heat and chemical, and has excellent electric characteristics. The application of the ruthenium oxide to the rectifying junction metal enhances performances, such as UV ray detection, of electronic devices and optical devices operable at an elevated temperature.
摘要翻译：在半导体器件中形成肖特基接触的方法包括制备诸如Al x Ga 1-x N和In x Ga 1-x N的n型GaN族化合物半导体层的步骤。作为整流结合金属，在n型GaN族化合物半导体层上形成包含钌成分层的至少一层金属层。整流结金属可用作场效应晶体管的栅极或肖特基二极管的电极。氧化钌成本低，对热和化学稳定，具有优异的电气特性。将氧化钌应用于整流接合金属增强了在高温下可操作的电子器件和光学器件的性能，如紫外线检测。

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