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1. 发明授权

US09343082B2 Systems and methods for detecting head contact 有权
标题翻译：检测头部接触的系统和方法
公开(公告)号：US09343082B2
公开(公告)日：2016-05-17
申请号：US12750675
申请日：2010-03-30
申请人： Harley Burger , David Fitzgerald , Jason P. Brenden , Stephen Kuehne
发明人： Harley Burger , David Fitzgerald , Jason P. Brenden , Stephen Kuehne
IPC分类号： G11B5/02 , G11B5/012 , G11B5/60
CPC分类号： G11B5/02 , G11B5/012 , G11B5/6005 , G11B5/6064
摘要： Various embodiments of the present invention provide systems and methods for determining contact with a storage medium. As an example, a data storage system is disclosed that includes: a head assembly and a data processing circuit. The head includes a head disk interface sensor operable to provide a contact signal indicating contact between the head and a storage medium disposed in relation to the head. The data processing circuit is operable to process the contact signal to yield an indication of a contact between the storage medium and the head.
摘要翻译：本发明的各种实施例提供用于确定与存储介质的接触的系统和方法。作为示例，公开了一种数据存储系统，其包括：头部组件和数据处理电路。头部包括头盘接口传感器，其可操作以提供指示头部与相对于头部布置的存储介质之间的接触的接触信号。数据处理电路可操作以处理接触信号以产生存储介质和磁头之间的接触的指示。

2. 发明申请

US20110242691A1 Systems and Methods for Detecting Head Contact 有权
标题翻译：检测头部接触的系统和方法
公开(公告)号：US20110242691A1
公开(公告)日：2011-10-06
申请号：US12750675
申请日：2010-03-30
申请人： Harley Burger , David Fitzgerald , Jason P. Brenden , Stephen Kuehne
发明人： Harley Burger , David Fitzgerald , Jason P. Brenden , Stephen Kuehne
IPC分类号： G11B27/36
CPC分类号： G11B5/02 , G11B5/012 , G11B5/6005 , G11B5/6064
摘要： Various embodiments of the present invention provide systems and methods for determining contact with a storage medium. As an example, a data storage system is disclosed that includes: a head assembly and a data processing circuit. The head includes a head disk interface sensor operable to provide a contact signal indicating contact between the head and a storage medium disposed in relation to the head. The data processing circuit is operable to process the contact signal to yield an indication of a contact between the storage medium and the head.
摘要翻译：本发明的各种实施例提供用于确定与存储介质的接触的系统和方法。作为示例，公开了一种数据存储系统，其包括：头部组件和数据处理电路。头部包括头盘接口传感器，其可操作以提供指示头部与相对于头部布置的存储介质之间的接触的接触信号。数据处理电路可操作以处理接触信号以产生存储介质和磁头之间的接触的指示。

3. 发明申请

US20060066973A1 Write head demagnetizer 有权
公开(公告)号：US20060066973A1
公开(公告)日：2006-03-30
申请号：US10954599
申请日：2004-09-30
申请人： Hao Fang , Stephen Kuehne
发明人： Hao Fang , Stephen Kuehne
IPC分类号： G11B5/02 , G11B5/09
CPC分类号： H01F13/006 , G11B5/465
摘要： A demagnetizer for an inductive load having a driver circuit including at least one transistor and a ramp-down voltage source switchably connected to the driver circuit, so that when the ramp-down voltage source is connected to the transistor, it drives the voltage of the transistor below its threshold voltage.

4. 发明申请

US20050254158A1 ESD protection for differential mode magnetic transducer 审中-公开
标题翻译：差模式磁传感器的ESD保护
公开(公告)号：US20050254158A1
公开(公告)日：2005-11-17
申请号：US10955237
申请日：2004-09-30
申请人： Stephen Kuehne , James Howley , Che Leung , David Kelly
发明人： Stephen Kuehne , James Howley , Che Leung , David Kelly
IPC分类号： G11B5/02 , G11B5/11 , G11B5/40
CPC分类号： G11B5/02 , G11B5/11 , G11B5/40
摘要： Use of a depletion mode MOSFET to protect differential terminals of a disk drive read head transducer from an electrostatic discharge event, wherein MOSFET source and drain terminals are connected to the differential terminals. The MOSFET is normally “on” such that a conductive path is provided between the differential signal terminals during assembly of the transducer into a disk drive data storage system and during periods when the transducer is inoperative. The conductive path, limits the differential voltage between the terminals that is generated by a current pulse of an ESD event. The MOSFET is gated off during operation of the disk drive to permit a differential read signal, representing the read data bits, to be developed between the differential terminals.
摘要翻译：使用耗尽型MOSFET来保护磁盘驱动器读头传感器的差动端子与静电放电事件，其中MOSFET源极和漏极端子连接到差分端子。 MOSFET通常“导通”，使得在将换能器组装到盘驱动器数据存储系统期间以及在换能器不工作的时段期间，在差分信号端子之间提供导电路径。导电路径限制由ESD事件的电流脉冲产生的端子之间的差分电压。在磁盘驱动器的操作期间，MOSFET被选通，以允许在差分端子之间形成表示读取数据位的差分读取信号。

5. 发明申请

US20070069250A1 Integrated circuit with depletion mode JFET 失效
标题翻译：具有耗尽型JFET的集成电路
公开(公告)号：US20070069250A1
公开(公告)日：2007-03-29
申请号：US11237095
申请日：2005-09-28
申请人： Alan Chen , Daniel Dolan , David Kelly , Daniel Kerr , Stephen Kuehne
发明人： Alan Chen , Daniel Dolan , David Kelly , Daniel Kerr , Stephen Kuehne
IPC分类号： H01L29/80
CPC分类号： H01L29/808 , H01L21/823892 , H01L27/0922 , H01L27/098 , H01L29/1066 , H01L29/7833
摘要： An integrated circuit having an n-channel MOSFET device and a JFET device. The integrated circuit includes a semiconductor layer having an upper surface, an MOS transistor device formed in a doped well of a first conductivity type extending from the semiconductor upper surface and a JFET device. The JFET device includes a channel region in the semiconductor layer spaced from, and having a peak concentration positioned a predetermined distance below, the upper surface. An associated method of manufacturing includes introducing p-type dopant into the semiconductor surface to form a p-well in which the NMOS device is formed and a source and a drain of the JFET device. N-type dopant is introduced into the semiconductor surface to form an n-type region of the NMOS device below the p-well and a gate region of the JFET device. P-type dopant is introduced into the semiconductor layer to simultaneously form a higher concentration p-type region in the p-well of the NMOS device and a channel region extending between the source and drain of the JFET.
摘要翻译：具有n沟道MOSFET器件和JFET器件的集成电路。集成电路包括具有上表面的半导体层，形成在从半导体上表面延伸的第一导电类型的掺杂阱中的MOS晶体管器件和JFET器件。 JFET器件包括半导体层中的与上表面间隔开并具有位于预定距离的峰值浓度的沟道区域。相关联的制造方法包括将p型掺杂剂引入半导体表面以形成其中形成NMOS器件的p阱以及JFET器件的源极和漏极。 N型掺杂剂被引入到半导体表面中以在p阱的下面形成NMOS器件的n型区域和JFET器件的栅极区域。 P型掺杂剂被引入到半导体层中，以在NMOS器件的p阱和在JFET的源极和漏极之间延伸的沟道区域中同时形成更高浓度的p型区域。

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