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1. 发明授权

US07038183B2 Image sensor device comprising central locking 有权
标题翻译：图像传感器装置包括中央锁定
公开(公告)号：US07038183B2
公开(公告)日：2006-05-02
申请号：US10451461
申请日：2001-12-18
申请人： Stephan Benthien
发明人： Stephan Benthien
IPC分类号： H01L27/00 , H04N5/335
CPC分类号： H04N5/353 , H04N5/374
摘要： The invention relates to an image sensor device comprising a substrate, formed in CMOS technology, in particular, with an integrated semiconductor structure (ASIC) and, arranged above that, an optically active thin-film structure comprising in each case at least one layer made of doped and undoped amorphous silicon, spatially adjacent pixels in each case being formed in the horizontal plane, which pixels each have an optoelectronic transducer for converting incident light into an electric current proportional to the incident quantity of light, and also a charge store assigned to the optoelectronic transducer, the charge state of which charge store can be varied in a manner dependent on the light incident on the assigned optoelectronic transducer. Taking this as a departure point, the invention is based on the object of further developing an image sensor device of the stated type to the effect of avoiding image distortions in the case of moving objects, which is achieved according to the invention by virtue of the fact that the charge store is a capacitor (Cint), in which the photocurrent output by the optoelectronic transducer can be integrated during a predetermined measurement duration, and that a switching means (Tstop) that can be driven by a common control device is provided in each pixel, which switching means can be driven jointly for all the pixels of the image sensor device.
摘要翻译：本发明涉及一种图像传感器装置，其包括以CMOS技术形成的衬底，特别是具有集成半导体结构（ASIC）的衬底，并且布置在其上，光学活性薄膜结构包括在每种情况下至少一层制成的掺杂和未掺杂的非晶硅，每种情况下的空间相邻像素形成在水平平面中，每个像素都具有用于将入射光转换为与入射光量成比例的电流的光电转换器，以及分配给光电子传感器，其电荷存储的充电状态可以以取决于所分配的光电转换器上入射的光的方式变化。以此作为出发点，本发明基于进一步开发所述类型的图像传感器装置的目的，以便在移动物体的情况下避免图像失真的效果，根据本发明，根据本发明实现事实上，电荷存储器是电容器（C int int int），其中光电转换器的光电流输出可以在预定测量持续时间内被积分，并且切换装置（T < / SUB>）可以由公共控制装置驱动，每个像素中可以为图像传感器装置的所有像素共同驱动该切换装置。

2. 发明授权

US07326589B2 Method for producing a TFA image sensor and one such TFA image sensor 有权
标题翻译：用于生产TFA图像传感器和一个这样的TFA图像传感器的方法
公开(公告)号：US07326589B2
公开(公告)日：2008-02-05
申请号：US11271492
申请日：2005-11-11
申请人： Peter Rieve , Konstantin Seibel , Jens Prima , Markus Scholz , Tarek Lule , Stephan Benthien , Michael Sommer , Michael Wagner
发明人： Peter Rieve , Konstantin Seibel , Jens Prima , Markus Scholz , Tarek Lule , Stephan Benthien , Michael Sommer , Michael Wagner
IPC分类号： H01L21/00
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14609 , H01L31/02162 , H01L31/0376 , Y02E10/50
摘要： The invention relates to a method for producing a TFA image sensor in which a multi-layer arrangement comprising a photo diode matrix is arranged on an ASIC switching circuit provided with electronic circuits for operating the TFA image sensor, such as pixel electronics, peripheral electronics and system electronics, for the pixel-wise conversion of electromagnetic radiation into an intensity-dependent photocurrent, the pixels being connected to contacts of the underlying pixel electronics of the ASIC switching circuit. The method enables conventionally produced ASIC switching circuits to be used without impairing the topography of the photoactive sensor surface. The CMOS passivation layer in the photoactive region and then the upper CMOS metallization are removed and replaced by a metallic layer which is structured in the pixel raster, for the formation of back electrodes. The photo diode matrix is then applied and structured, said photo diode matrix being embodied as a pixel matrix, on which a passivating protective layer and/or a color filter layer having a passivating action can be applied.
摘要翻译：本发明涉及一种制造TFA图像传感器的方法，其中包括光电二极管阵列的多层布置被布置在ASIC切换电路上，该ASIC开关电路设置有用于操作TFA图像传感器的电子电路，例如像素电子器件，外围电子器件和系统电子器件，用于将电磁辐射像素地转换成强度依赖的光电流，像素连接到ASIC开关电路的底层像素电子器件的触点。该方法能够在不损害光敏传感器表面的形貌的情况下使用常规生产的ASIC切换电路。去除光致活性区域中的CMOS钝化层，然后去除上部CMOS金属化的CMOS钝化层，并由构成像素栅格的金属层代替以形成背面电极。然后施加和构造光电二极管矩阵，所述光电二极管矩阵被实现为像素矩阵，其上可以应用具有钝化作用的钝化保护层和/或滤色器层。

3. 发明申请

US20050040320A1 CMOS light sensing cell 有权
标题翻译： CMOS感光单元
公开(公告)号：US20050040320A1
公开(公告)日：2005-02-24
申请号：US10916902
申请日：2004-08-12
申请人： Tarek Lule , Stephan Benthien
发明人： Tarek Lule , Stephan Benthien
IPC分类号： H01L27/146 , H04N5/363 , H04N5/3745 , H01J40/14 , G02B27/00 , H03K3/42
CPC分类号： H04N5/363 , H01L27/14609 , H04N5/3745
摘要： A light sensing cell comprising output means (T1, T2) for generating an output voltage depending on the voltage of a sensing node (2), the voltage of the sensing node varying as a function of a received light; a reset transistor (T3) operable to force the voltage of the sensing node (2) to a reset voltage; a feedback loop comprising an operational amplifier (A1) operable to add through a capacitive voltage divider (C3, C4) a correction voltage to the voltage of the sensing node (2), said correction voltage depending on the output voltage; and preset means (T5) for, during the operation of the reset transistor (T3) and until the amplifier (A1) is operated, setting the input of the capacitive voltage divider (C3, C4) to a predetermined voltage (Vinit).
摘要翻译：一种感光单元，包括用于根据感测节点（2）的电压产生输出电压的输出装置（T1，T2），感测节点的电压作为接收光的函数而变化; 复位晶体管（T3），其可操作以将感测节点（2）的电压强制为复位电压; 反馈回路，包括运算放大器（A1），其可操作以通过电容分压器（C3，C4）将校正电压加到感测节点（2）的电压上，所述校正电压取决于输出电压; 和预置装置（T5），用于在复位晶体管（T3）的操作期间，并且直到放大器（A1）工作，将电容分压器（C3，C4）的输入设置为预定电压（Vinit）。

4. 发明授权

US07173228B2 Image sensor device comprising protection against overflow 有权
标题翻译：图像传感器装置包括防止溢出
公开(公告)号：US07173228B2
公开(公告)日：2007-02-06
申请号：US10451522
申请日：2001-12-18
申请人： Stephan Benthien
发明人： Stephan Benthien
IPC分类号： H01L27/00 , H04N5/335
CPC分类号： H04N5/3591 , H04N5/374
摘要： The invention relates to an image sensor device comprising a substrate, formed in CMOS technology, in particular, with an integrated semiconductor structure (ASIC) and, arranged above that, an optically active thin-film structure comprising in each case at least one layer made of doped and undoped amorphous silicon, spatially adjacent pixels in each case being formed in the horizontal plane, which pixels each have an optoelectronic transducer for converting incident light into an electric current proportional to the incident quantity of light, and also a charge store assigned to the optoelectronic transducer, the charge state of which charge store can be varied in a manner dependent on the light incident on the assigned optoelectronic transducer. Taking this as a departure point, the invention is based on the object of further developing an image sensor device of the stated type to the effect of avoiding image distortions in the case of moving objects, which is achieved according to the invention by virtue of the fact that the charge store is a capacitor (Cint), in which the photocurrent output by the optoelectronic transducer can be integrated during a predetermined measurement duration, and that a switching means (Tstop) that can be driven by a common control device is provided in each pixel, which switching means can be driven jointly for all the pixels of the image sensor device.
摘要翻译：本发明涉及一种图像传感器装置，其包括以CMOS技术形成的衬底，特别是具有集成半导体结构（ASIC）的衬底，并且布置在其上，光学活性薄膜结构包括在每种情况下至少一层制成的掺杂和未掺杂的非晶硅，每种情况下的空间相邻像素形成在水平面中，每个像素都具有用于将入射光转换为与入射光量成比例的电流的光电转换器，以及分配给光电子传感器，其电荷存储的充电状态可以以取决于所分配的光电转换器上入射的光的方式变化。以此作为出发点，本发明基于进一步开发所述类型的图像传感器装置的目的，以便在移动物体的情况下避免图像失真的效果，根据本发明，根据本发明实现事实上，电荷存储器是电容器（C int int int），其中光电转换器的光电流输出可以在预定测量持续时间内被积分，并且切换装置（T < / SUB>）可以由公共控制装置驱动，每个像素中可以为图像传感器装置的所有像素共同驱动该切换装置。

5. 发明授权

US07145123B2 CMOS light sensing cell 有权
标题翻译： CMOS感光单元
公开(公告)号：US07145123B2
公开(公告)日：2006-12-05
申请号：US10916902
申请日：2004-08-12
申请人： Tarek Lule , Stephan Benthien
发明人： Tarek Lule , Stephan Benthien
IPC分类号： H04N5/217 , H01L27/00
CPC分类号： H04N5/363 , H01L27/14609 , H04N5/3745
摘要： A light sensing cell comprising output circuitry for generating an output voltage depending on the voltage of a sensing node, the voltage of the sensing node varying as a function of a received light; a reset transistor operable to force the voltage of the sensing node to a reset voltage; a feedback loop including an operational amplifier operable to add through a capacitive voltage divider a correction voltage to the voltage of the sensing node, said correction voltage depending on the output voltage; and preset mean circuitry for, during the operation of the reset transistor and until the amplifier is operated, setting the input of the capacitive voltage divider to a predetermined voltage.
摘要翻译：一种光感测单元，包括用于根据感测节点的电压产生输出电压的输出电路，所述感测节点的电压作为所接收的光的函数而变化; 复位晶体管，其可操作以将感测节点的电压强制为复位电压; 反馈回路，包括运算放大器，可操作以通过电容分压器将校正电压加到感测节点的电压，所述校正电压取决于输出电压; 以及预置的平均电路，用于在复位晶体管的操作期间，直到放大器工作，将电容分压器的输入设置为预定电压。

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