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    • 1. 发明授权
    • Fast programming method for nonvolatile memories, in particular flash memories, and relative memory architecture
    • 用于非易失性存储器,特别是闪速存储器和相对存储器架构的快速编程方法
    • US06981107B2
    • 2005-12-27
    • US10281078
    • 2002-10-24
    • Guido LomazziJacopo MulattiSt fano Surico
    • Guido LomazziJacopo MulattiSt fano Surico
    • G11C16/10C06F12/00
    • G11C16/10G11C2216/14G11C2216/16
    • The programming method includes the following steps: sequentially receiving a plurality of data words; temporarily storing each data word after its reception; and simultaneously writing in parallel the plurality of stored data words in a memory array. After reception and temporary storage of each data word, the memory increments an address counter and sends a “ready” signal. Upon reception of each new data word, the memory verifies whether the address associated thereto is in the same sector as the initial data word and whether n data words have already been stored. If the sector is different, blind-programming step is terminated and the verifying is carried out; if the sector is the same but n data words have already been stored temporarily, the memory writes the temporarily stored words in the memory array, updates the address counter, and then sends the “ready” signal.
    • 编程方法包括以下步骤:顺序地接收多个数据字; 在接收后临时存储每个数据字; 并且同时将多个存储的数据字并行地写入存储器阵列中。 在每个数据字的接收和临时存储之后,存储器增加一个地址计数器并发送一个“就绪”信号。 在接收到每个新的数据字时,存储器验证与其相关联的地址是否在与初始数据字相同的扇区中,以及是否已经存储了n个数据字。 如果扇区不同,则盲编程步骤终止并进行验证; 如果扇区是相同的,但是n个数据字已经被临时存储,则存储器将临时存储的字写入存储器阵列,更新地址计数器,然后发送“就绪”信号。