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    • 1. 发明授权
    • Non-planar surface structures and process for microelectromechanical systems
    • 微机电系统的非平面表面结构和工艺
    • US07527996B2
    • 2009-05-05
    • US11406981
    • 2006-04-19
    • Qi LuoSriram AkellaLior Kogut
    • Qi LuoSriram AkellaLior Kogut
    • H01L21/00
    • B81B3/0008G02B26/001
    • Methods of making MEMS devices including interferometric modulators involve depositing various layers, including stationary layers, movable layers and sacrificial layers, on a substrate. Voids are formed in one or more of the various layers so as to form a non-planar surface on the movable and/or the stationary layers. The voids are formed to extend through less than the entire thickness of the layer where they are being formed. Other layers may be formed over the formed voids. Removal of the sacrificial layer from between the resulting non-planar movable and/or stationary layers results in a released MEMS device having reduced contact area between the movable and stationary layers when the MEMS device is actuated. The reduced contact area results in lower adhesion forces and reduced stiction during actuation of the MEMS device. These methods may be used to manufacture released and unreleased interferometric modulators.
    • 制造包括干涉式调制器的MEMS器件的方法包括在衬底上沉积包括固定层,可移动层和牺牲层的各种层。 在各层中的一个或多个中形成空隙,以在可移动和/或固定层上形成非平面表面。 空隙形成为延伸穿过小于形成它们的层的整个厚度。 可以在所形成的空隙上形成其它层。 从所得到的非平面可移动和/或固定层之间去除牺牲层导致当MEMS器件致动时,可释放的MEMS器件具有减小的可移动层和固定层之间的接触面积。 减小的接触面积导致MEMS器件的致动期间较低的粘附力和降低的静摩擦力。 这些方法可用于制造释放和未释放的干涉式调制器。
    • 4. 发明申请
    • Non-planar surface structures and process for microelectromechanical systems
    • 微机电系统的非平面表面结构和工艺
    • US20070249081A1
    • 2007-10-25
    • US11406981
    • 2006-04-19
    • Qi LuoSriram AkellaLior Kogut
    • Qi LuoSriram AkellaLior Kogut
    • H01L21/00H01L29/84
    • B81B3/0008G02B26/001
    • Methods of making MEMS devices including interferometric modulators involve depositing various layers, including stationary layers, movable layers and sacrificial layers, on a substrate. Voids are formed in one or more of the various layers so as to form a non-planar surface on the movable and/or the stationary layers. The voids are formed to extend through less than the entire thickness of the layer where they are being formed. Other layers may be formed over the formed voids. Removal of the sacrificial layer from between the resulting non-planar movable and/or stationary layers results in a released MEMS device having reduced contact area between the movable and stationary layers when the MEMS device is actuated. The reduced contact area results in lower adhesion forces and reduced stiction during actuation of the MEMS device. These methods may be used to manufacture released and unreleased interferometric modulators.
    • 制造包括干涉式调制器的MEMS器件的方法包括在衬底上沉积包括固定层,可移动层和牺牲层的各种层。 在各层中的一个或多个中形成空隙,以在可移动和/或固定层上形成非平面表面。 空隙形成为延伸穿过小于形成它们的层的整个厚度。 可以在所形成的空隙上形成其它层。 从所得到的非平面可移动和/或固定层之间去除牺牲层导致当MEMS器件致动时,可释放的MEMS器件具有减小的可移动层和固定层之间的接触面积。 减小的接触面积导致MEMS器件的致动期间较低的粘附力和降低的静摩擦力。 这些方法可用于制造释放和未释放的干涉式调制器。
    • 5. 发明申请
    • Non-planar surface structures and process for microelectromechanical systems
    • 微机电系统的非平面表面结构和工艺
    • US20070249078A1
    • 2007-10-25
    • US11406776
    • 2006-04-19
    • Ming-Hau TungSriram AkellaWilliam CummingsLior Kogut
    • Ming-Hau TungSriram AkellaWilliam CummingsLior Kogut
    • H01L21/00
    • B81B3/0008G02B26/001
    • Methods of making MEMS devices including interferometric modulators involve depositing various layers, including stationary layers, movable layers and sacrificial layers, on a substrate. Apertures are formed in one or more of the various layers so as to form a non-planar surface on the movable and/or the stationary layers. Other layers may be formed over the formed apertures. Removal of the sacrificial layer from between the resulting non-planar movable and/or stationary layers results in a released MEMS device having reduced contact area and/or a larger surface separation between the movable and stationary layers when the MEMS device is actuated. The reduced contact area results in lower adhesion forces and reduced stiction during actuation of the MEMS device. These methods may be used to manufacture released and unreleased interferometric modulators.
    • 制造包括干涉式调制器的MEMS器件的方法包括在衬底上沉积包括固定层,可移动层和牺牲层的各种层。 在一个或多个不同层中形成孔径,以便在可移动和/或固定层上形成非平面表面。 可以在所形成的孔上形成其它层。 从所得到的非平面可移动和/或固定层之间去除牺牲层导致当MEMS器件致动时,可释放的MEMS器件具有减小的接触面积和/或可移动层和固定层之间较大的表面间隔。 减小的接触面积导致MEMS器件的致动期间较低的粘附力和降低的静摩擦力。 这些方法可用于制造释放和未释放的干涉式调制器。