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1. 发明授权

US5672538A Modified locus isolation process in which surface topology of the locos oxide is smoothed 失效
标题翻译：修改的轨迹分离过程，其中氧化物氧化物的表面拓扑平滑
公开(公告)号：US5672538A
公开(公告)日：1997-09-30
申请号：US567015
申请日：1995-12-04
申请人： Jhon-Jhy Liaw , Jin-Yuan Lee , Sou-Wein Kuo
发明人： Jhon-Jhy Liaw , Jin-Yuan Lee , Sou-Wein Kuo
IPC分类号： H01L21/3105 , H01L21/762 , H01L21/76
CPC分类号： H01L21/31053 , H01L21/76202 , Y10S438/978
摘要： A method for improving the surface topology silicon wafers during the fabrication of integrated circuits is described. Regions of silicon oxide isolation, incorporated into the silicon surface by thermal oxidation, frequently present an undesirable surface topology consisting of raised regions around their perimeter. These protrusions undermine the integrity of metallization lines subsequently deposited over them. Specifically, the metal lines tend to be thinner over the surface protrusions and consequently incur high failure rates. After the isolation regions are incorporated, a silicon oxide layer is deposited which is then etched back using a unidirectional anisotropic etching step which leaves behind portions of the layer in the regions of the steepest surface gradients. This results in smoothing out the irregularities and consequently provides for more uniform and reliable metallization lines.
摘要翻译：描述了在集成电路制造期间改进表面拓扑硅晶片的方法。通过热氧化并入硅表面的氧化硅隔离区域经常呈现出不期望的表面拓扑结构，其周围包括凸起区域。这些突起破坏随后沉积在其上的金属化线的完整性。具体来说，金属线在表面突起上倾向于更薄，因此导致高故障率。在并入隔离区之后，沉积氧化硅层，然后使用单向各向异性蚀刻步骤将其回蚀刻，该步骤在最陡的表面梯度的区域中留下该层的部分。这导致平滑不规则性，并因此提供更均匀和可靠的金属化线。

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