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    • 2. 发明授权
    • Thin-film magnetic bubble domain detection device and process for
manufacturing the same
    • 薄膜磁泡域检测装置及其制造方法
    • US4302822A
    • 1981-11-24
    • US36983
    • 1979-05-08
    • Sotaro EshoHiroshi Gokan
    • Sotaro EshoHiroshi Gokan
    • G11C19/08H01F10/06
    • G11C19/0866H01F10/06
    • A thin-film bubble domain detection device for use in a magnetic bubble memory comprises two metallic conductor leads formed with sloped opposing edges on the SiO.sub.2 spacer layer of a garnet substrate and a permalloy magnetoresistive sensing element formed therebetween. A method for making the device uses a first photoresist mask in ion milling in a conductor layer to expose an area of spacer, followed by deposit of a permalloy film over the substrate and onto the exposed spacer before removal of the first mask. Extraneous permalloy is lifted off when the first photoresist is removed. A second mask is used to simultaneously ion mill the final conductor lead and sensing element configurations. In one embodiment, first and second dielectric layers are added to the device to improve bubble propagation and provide an easily planned product.
    • 用于磁性气泡存储器的薄膜气泡域检测装置包括在石榴石衬底的SiO 2间隔层上形成有倾斜的相对边缘的两个金属导体引线和在它们之间形成的坡莫合金磁阻感测元件。 制造该器件的方法是在导体层中离子研磨中使用第一光致抗蚀剂掩模以暴露间隔物的区域,然后在去除第一掩模之前在坡度合金膜上沉积到坡度合金膜上并暴露于间隔物上。 当去除第一光致抗蚀剂时,外来坡莫合金被剥离。 第二个掩模用于同时离子磨削最终导体引线和感测元件配置。 在一个实施例中,将第一和第二电介质层添加到该器件中以改善气泡传播并提供容易计划的产品。
    • 3. 发明授权
    • Optical information storage medium
    • 光信息存储介质
    • US4763139A
    • 1988-08-09
    • US893040
    • 1986-08-01
    • Masaki ItohAkio MorimotoSotaro Esho
    • Masaki ItohAkio MorimotoSotaro Esho
    • G11B7/243G11B7/257G11B7/2572G11B7/2578G01D15/34
    • G11B7/257G11B7/243G11B2007/24306G11B2007/24312G11B2007/2432G11B7/2572G11B7/2578
    • An optical information storage medium comprising a transparent substrate and an information carrying layer positioned on one side of the substrate, wherein the information carrying layer contains at least 30 percent by volume of tin and at least 20 percent by volume of nickel oxide. The information carrying layer may be formed directly on one surface of the substrate. Alternatively, the information storage medium may further comprise a first spacer layer formed on one surface of the substrate and a second spacer layer which intervenes between the first spacer layer and the information carrying layer, wherein the first spacer layer is substantially transparent to a radiation with a predetermined wavelength and is larger in refractive index than the substrate at the aforesaid wavelength and the second spacer layer is substantially transparent to the aforesaid radiation and is smaller in refractive index than the first spacer layer at the aforesaid wavelength.
    • 一种光学信息存储介质,包括位于所述基底一侧的透明基底和信息载体层,其中所述信息载体层含有至少30体积%的锡和至少20体积%的氧化镍。 信息承载层可以直接形成在基板的一个表面上。 或者,信息存储介质还可以包括形成在基板的一个表面上的第一间隔层和介于第一间隔层和信息承载层之间的第二间隔层,其中第一间隔层对于具有 预定波长并且在上述波长处的折射率大于基底,并且第二间隔层对于上述辐射基本上是透明的,并且在上述波长处的折射率小于第一间隔层。