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    • 6. 发明申请
    • Metallic compound hybridized nanophosphor layer, applications thereof, and method of preparing a metallic compound hybridized nanophosphor layer
    • 金属化合物杂化纳米荧光体层,其应用,以及制备金属化合物杂化纳米荧光体层的方法
    • US20090009059A1
    • 2009-01-08
    • US12213193
    • 2008-06-16
    • Soon-Jae KwonHyun-Sik Kim
    • Soon-Jae KwonHyun-Sik Kim
    • H01J1/62B05D5/12
    • C09K11/7797H01J11/12H01J11/42H05B33/145
    • A metallic compound hybridized nanophosphor layer, in which the metallic compound is metallic oxide or metallic sulfide. The metallic compound hybridized nanophosphor layer is prepared in consideration of physical, mechanical, and chemical stabilities. The metallic compound hybridized nanophosphor layer has an excellent light scattering effect and high durability against damage from ion-bombardment. In addition, the charging effect caused by V-UV vacuum-ultraviolet ray can be considerably reduced. Thus, the metallic compound hybridized nanophosphor layer is very suitable for various display devices having high efficiency and high resolution. Accordingly, a display device using the metallic compound hybridized nanophosphor layer shows high performance and long lifetime. The method of forming the metallic compound hybridized nanophosphor layer is a low temperature layer forming process through which a thin film-type layer can be formed at low temperature. Therefore, a phosphor layer having physical, mechanical, and chemical stabilities can be formed at low cost.
    • 金属化合物杂化纳米荧光体层,其中金属化合物是金属氧化物或金属硫化物。 考虑到物理,机械和化学稳定性制备金属化合物杂化纳米磷光体层。 金属化合物杂化纳米荧光体层具有优异的光散射效果和对离子轰击损伤的高耐久性。 另外,可以显着地降低由V-UV真空紫外线引起的充电效果。 因此,金属化合物杂化纳米荧光体层非常适合于具有高效率和高分辨率的各种显示装置。 因此,使用金属化合物杂化纳米荧光体层的显示装置显示出高性能和长寿命。 形成金属化合物杂化纳米荧光体层的方法是低温层形成工艺,可以在低温下形成薄膜型层。 因此,可以以低成本形成具有物理,机械和化学稳定性的荧光体层。
    • 7. 发明授权
    • Inorganic electroluminescent diode and method of fabricating the same
    • 无机电致发光二极管及其制造方法
    • US08017952B2
    • 2011-09-13
    • US11534867
    • 2006-09-25
    • Kyung Sang ChoByung Lyong ChoiByoung Lyong ChoiSoon Jae Kwon
    • Kyung Sang ChoByung Lyong ChoiByoung Lyong ChoiSoon Jae Kwon
    • H01L27/15
    • C09K11/883C09K11/565H01L33/06H01L33/08H01L33/18H01L33/26H05B33/14
    • Disclosed are an inorganic electroluminescent diode and a method of fabricating the same. Specifically, this invention provides an inorganic electroluminescent diode, which includes a semiconductor nanocrystal layer formed of inorganic material, an electron transport layer or a hole transport layer formed on the semiconductor nanocrystal layer using amorphous inorganic material, and a hole transport layer or an electron transport layer formed beneath the semiconductor nanocrystal layer using inorganic material, and also provides a method of fabricating such an inorganic electroluminescent diode. According to the method of fabricating the inorganic electroluminescent diode of this invention, an inorganic electroluminescent diode can be fabricated while maintaining the properties of luminescent semiconductor material of the semiconductor crystal layer, and also an inorganic electroluminescent diode which is stably operated and has high luminescent efficiency can be provided.
    • 公开了一种无机电致发光二极管及其制造方法。 具体地说,本发明提供了一种无机电致发光二极管,其包括由无机材料形成的半导体纳米晶层,使用无定形无机材料形成在半导体纳米晶层上的电子传输层或空穴传输层,以及空穴传输层或电子传输 使用无机材料形成在半导体纳米晶层之下的层,并且还提供制造这种无机电致发光二极管的方法。 根据制造本发明的无机电致发光二极管的方法,可以制造无机电致发光二极管,同时保持半导体晶体层的发光半导体材料的性质,以及稳定操作且具有高发光效率的无机电致发光二极管 可以提供。