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1. 发明申请

US20100272900A1 Method of fabricating zinc oxide nanowire using supersonic energy 审中-公开
标题翻译：使用超音速能量制造氧化锌纳米线的方法
公开(公告)号：US20100272900A1
公开(公告)日：2010-10-28
申请号：US12003869
申请日：2008-01-03
申请人： Wan-jun Park , Soo-hwan Jeong
发明人： Wan-jun Park , Soo-hwan Jeong
IPC分类号： B05D1/32 , B05D3/00
CPC分类号： C01G9/02 , B82Y10/00 , B82Y30/00 , C01P2004/03 , C01P2004/16 , C30B7/14 , C30B29/16 , C30B29/62 , H01L21/02554 , H01L21/02603 , H01L21/02628 , H01L21/02639 , H01L21/02645 , H01L29/0665 , H01L29/0676
摘要： Provided is a method of fabricating ZnO nanowires using a sonicator. The method includes (a) forming a Zn layer on a surface of a substrate, (b) patterning the Zn layer, and (c) forming ZnO nanowires on the Zn layer by immersing the substrate, on which the Zn layer is patterned in a mixed solution made of a solution containing Zn and a solution ionizing Zn, in a sonicator. ZnO nanowires may be formed at a predetermined location at room temperature according to the present invention.
摘要翻译：提供了使用超声波处理器制造ZnO纳米线的方法。该方法包括：（a）在衬底的表面上形成Zn层，（b）图案化Zn层，以及（c）通过将Zn层图案化的衬底浸渍在Zn层上形成ZnO纳米线在含有Zn的溶液和电离Zn的溶液中制成的混合溶液在超声波发生器中。根据本发明，可以在室温下的预定位置处形成ZnO纳米线。

2. 发明授权

US07554255B2 Electric field emission device having a triode structure fabricated by using an anodic oxidation process and method for fabricating same 失效
标题翻译：具有通过使用阳极氧化工艺制造的三极管结构的电场发射器件及其制造方法
公开(公告)号：US07554255B2
公开(公告)日：2009-06-30
申请号：US10522572
申请日：2003-07-30
申请人： Kun-Hong Lee , Sun-Kyu Hwang , Soo-Hwan Jeong
发明人： Kun-Hong Lee , Sun-Kyu Hwang , Soo-Hwan Jeong
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01J21/105 , H01J9/025
摘要： An electric field emission device having a triode structure is fabricated by using an anodic oxidation process. The device includes a supporting substrate, a bottom electrode layer to be used as an cathode electrode of the device, a gate insulating layer having a plurality of first sub-micro holes, a gate electrode layer having a plurality of second sub-micro holes connecting to the first sub-micro holes, an anode insulating layer having a plurality of third sub-micro holes connecting to the second sub-micro holes, a top electrode layer for hermetically sealing the device, the top electrode layer being used as an anode of the device and a plurality of emitters formed in the first sub-micro holes. The emitters are formed so as to come into as close contact as possible to the electrodes of the device, which results in decreasing a driving voltage.
摘要翻译：通过使用阳极氧化工艺制造具有三极管结构的电场发射器件。该器件包括支撑衬底，用作器件的阴极电极的底部电极层，具有多个第一子微孔的栅极绝缘层，具有多个第二子微孔的栅极电极层对于第一子微孔，具有连接到第二子微孔的多个第三子微孔的阳极绝缘层，用于气密密封器件的顶电极层，顶电极层用作阳极的阳极所述装置和形成在所述第一子微孔中的多个发射器。发射体形成为尽可能接近器件的电极，导致驱动电压降低。

3. 发明申请

US20080257861A1 Method of manufacturing self-ordered nanochannel-array and method of manufacturing nanodot using the nanochannel-array 失效
标题翻译：使用纳米通道阵列制造自定序纳米通道阵列的方法和制造纳米点的方法
公开(公告)号：US20080257861A1
公开(公告)日：2008-10-23
申请号：US11882112
申请日：2007-07-30
申请人： In-kyeong Yoo , Soo-hwan Jeong , Sun-ae Seo , In-sook Kim
发明人： In-kyeong Yoo , Soo-hwan Jeong , Sun-ae Seo , In-sook Kim
IPC分类号： B44C1/22
CPC分类号： B82B3/00 , B29C59/022 , B29C59/026 , B29C2059/023 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/32139
摘要： A method of manufacturing a nanochannel-array and a method of fabricating a nanodot using the nanochannel-array are provided. The nanochannel-array manufacturing method includes: performing first anodizing to form a first alumina layer having a channel array formed by a plurality of cavities on an aluminum substrate; etching the first alumina layer to a predetermined depth and forming a plurality of concave portions on the aluminum substrate, wherein each concave portion corresponds to the bottom of each channel of the first alumina layer; and performing second anodizing to form a second alumina layer having an array of a plurality of channels corresponding to the plurality of concave portions on the aluminum substrate. The array manufacturing method makes it possible to obtain finely ordered cavities and form nanoscale dots using the cavities.
摘要翻译：提供一种制造纳米通道阵列的方法和使用纳米通道阵列制造纳米点的方法。纳米通道阵列制造方法包括：执行第一阳极氧化以形成具有由铝基板上的多个空腔形成的沟道阵列的第一氧化铝层; 将第一氧化铝层蚀刻到预定深度并在铝基板上形成多个凹部，其中每个凹部对应于第一氧化铝层的每个通道的底部; 以及进行第二阳极氧化以形成具有与所述铝基板上的所述多个凹部对应的多个通道的阵列的第二氧化铝层。阵列制造方法使得可以使用空腔获得精细排列的空腔并形成纳米级点。

4. 发明申请

US20060239892A1 Method of synthesizing carbon nanotubes 有权
标题翻译：合成碳纳米管的方法
公开(公告)号：US20060239892A1
公开(公告)日：2006-10-26
申请号：US11281472
申请日：2005-11-18
申请人： Soo-Hwan Jeong , Wan-Jun Park , Jong-Bong Park , Ju-Hye Ko
发明人： Soo-Hwan Jeong , Wan-Jun Park , Jong-Bong Park , Ju-Hye Ko
IPC分类号： C01B31/02
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/02 , Y10S977/842
摘要： A method of synthesizing carbon nanotubes including forming a solution including an organometallic compound containing catalyst particles and a solvent, adding at least one support to the solution, wherein the carbon nanotubes are synthesized on a surface of the at least one support, and applying radiation to the solution to which the at least one support is added.
摘要翻译：一种合成碳纳米管的方法，包括形成包含含有催化剂颗粒和溶剂的有机金属化合物的溶液，向所述溶液中加入至少一种载体，其中所述碳纳米管在所述至少一种载体的表面上合成，并施加辐射添加至少一个支持物的解决方案。

5. 发明授权

US07115306B2 Method of horizontally growing carbon nanotubes and device having the same 有权
标题翻译：水平生长碳纳米管的方法及其装置
公开(公告)号：US07115306B2
公开(公告)日：2006-10-03
申请号：US11036379
申请日：2005-01-18
申请人： Soo-hwan Jeong , Wan-jun Park , In-kyeong Yoo , Ju-hye Ko
发明人： Soo-hwan Jeong , Wan-jun Park , In-kyeong Yoo , Ju-hye Ko
IPC分类号： H05H1/24
CPC分类号： C30B29/602 , B82Y30/00 , B82Y40/00 , C01B32/162 , C23C26/00 , C30B25/00 , H01J1/304 , H01J9/025 , H01J2201/30469
摘要： Provided are a method of growing carbon nanotubes and a carbon nanotube device. The method includes: depositing an aluminum layer on a substrate; forming an insulating layer over the substrate to cover the aluminum layer; patterning the insulating layer and the aluminum layer on the substrate to expose a side of the aluminum layer; forming a plurality of holes in the exposed side of the aluminum layer to a predetermined depth; depositing a catalyst metal layer on the bottoms of the holes; and growing the carbon nanotubes from the catalyst metal layer.
摘要翻译：提供生长碳纳米管和碳纳米管装置的方法。该方法包括：在基底上沉积铝层; 在所述基板上形成绝缘层以覆盖所述铝层; 将绝缘层和铝层图案化在基板上以暴露铝层的一侧; 在铝层的暴露侧形成多个孔至预定深度; 在所述孔的底部沉积催化剂金属层; 并从催化剂金属层生长碳纳米管。

6. 发明申请

US20060180845A1 Memory device with silicon rich silicon oxide layer and method of manufacturing the same 审中-公开
标题翻译：具有富硅氧化硅层的存储器件及其制造方法
公开(公告)号：US20060180845A1
公开(公告)日：2006-08-17
申请号：US11350867
申请日：2006-02-10
申请人： Young-Kwan Cha , In-Kyeong Yoo , Soo-Hwan Jeong
发明人： Young-Kwan Cha , In-Kyeong Yoo , Soo-Hwan Jeong
IPC分类号： H01L21/8238 , H01L29/76 , H01L21/326
CPC分类号： H01L29/42332 , H01L29/40114 , H01L29/40117 , H01L29/7882
摘要： A memory device with a silicon rich oxide layer and a method of manufacturing the same are provided. The memory device with a silicon rich oxide layer may include a semiconductor substrate, source/drain regions formed on the semiconductor substrate, and a gate structure formed on the semiconductor substrate. The gate structure may contact with the source/drain regions and may include a silicon oxide layer with a silicon content greater than that of a silicon oxide layer (SiO2).
摘要翻译：提供了具有富硅氧化物层的存储器件及其制造方法。具有富硅氧化物层的存储器件可以包括半导体衬底，形成在半导体衬底上的源极/漏极区域和形成在半导体衬底上的栅极结构。栅极结构可以与源极/漏极区域接触，并且可以包括具有大于氧化硅层（SiO 2）的硅含量的硅氧化物层。

7. 发明授权

US06998162B2 Optical recording medium with phase transition layer and method of manufacturing the optical recording medium 有权
标题翻译：具有相变层的光记录介质和制造光记录介质的方法
公开(公告)号：US06998162B2
公开(公告)日：2006-02-14
申请号：US10441122
申请日：2003-05-20
申请人： In-kyeong Yoo , Soo-hwan Jeong , In-sook Kim
发明人： In-kyeong Yoo , Soo-hwan Jeong , In-sook Kim
IPC分类号： B32B3/02
CPC分类号： G11B7/26 , G11B7/24035 , G11B7/241 , Y10T428/21
摘要： An optical recording medium having a phase transition material film and a method of manufacturing the optical recording medium are provided. In the method, first, a phase transition material film, a sacrificial film, and a metal film are sequentially stacked on a substrate. Next, the metal film is anodized to form a metal oxide film having a plurality of holes, and portions of the sacrificial film exposed through the holes are anode-oxidized to form oxide films. Thereafter, the phase transition material film is patterned by removing the metal oxide film and by etching the sacrificial film and the phase transition material film using the oxide films as a mask. Then, the oxide films are removed from the sacrificial film, and an upper insulation film, a reflection film, and a protection film are deposited on the upper surface of the patterned phase transition material film. The optical recording medium can be simply manufactured by using a self-alignment method and can have a highly-integrated large-capacity memory.
摘要翻译：提供具有相变材料膜的光记录介质和制造光记录介质的方法。在该方法中，首先，将相变材料膜，牺牲膜和金属膜依次层叠在基板上。接下来，金属膜被阳极化以形成具有多个孔的金属氧化物膜，并且通过孔露出的部分牺牲膜被阳极氧化以形成氧化物膜。此后，通过去除金属氧化物膜并且通过使用氧化膜作为掩模蚀刻牺牲膜和相变材料膜来对相变材料膜进行图案化。然后，从牺牲膜上除去氧化物膜，并且在图案化的相变材料膜的上表面上沉积上绝缘膜，反射膜和保护膜。光记录介质可以通过使用自对准方法简单地制造，并且可以具有高度集成的大容量存储器。

8. 发明授权

US07282446B2 Method of manufacturing self-ordered nanochannel-array and method of manufacturing nanodot using the nanochannel-array 有权
标题翻译：使用纳米通道阵列制造自定序纳米通道阵列的方法和制造纳米点的方法
公开(公告)号：US07282446B2
公开(公告)日：2007-10-16
申请号：US10819143
申请日：2004-04-07
申请人： In-kyeong Yoo , Soo-hwan Jeong , Sun-ae Seo , In-sook Kim
发明人： In-kyeong Yoo , Soo-hwan Jeong , Sun-ae Seo , In-sook Kim
IPC分类号： H01L21/302
CPC分类号： B82B3/00 , B29C59/022 , B29C59/026 , B29C2059/023 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/32139
摘要： A method of manufacturing a nanochannel-array and a method of fabricating a nanodot using the nanochannel-array are provided. The nanochannel-array manufacturing method includes: performing first anodizing to form a first alumina layer having a channel array formed by a plurality of cavities on an aluminum substrate; etching the first alumina layer to a predetermined depth and forming a plurality of concave portions on the aluminum substrate, wherein each concave portion corresponds to the bottom of each channel of the first alumina layer; and performing second anodizing to form a second alumina layer having an array of a plurality of channels corresponding to the plurality of concave portions on the aluminum substrate. The array manufacturing method makes it possible to obtain finely ordered cavities and form nanoscale dots using the cavities.
摘要翻译：提供一种制造纳米通道阵列的方法和使用纳米通道阵列制造纳米点的方法。纳米通道阵列制造方法包括：执行第一阳极氧化以形成具有由铝基板上的多个空腔形成的沟道阵列的第一氧化铝层; 将第一氧化铝层蚀刻到预定深度并在铝基板上形成多个凹部，其中每个凹部对应于第一氧化铝层的每个通道的底部; 以及进行第二阳极氧化以形成具有与所述铝基板上的所述多个凹部对应的多个通道的阵列的第二氧化铝层。阵列制造方法使得可以使用空腔获得精细排列的空腔并形成纳米级点。

9. 发明申请

US20060196772A1 Microfluidic device including membrane having nano- to micro-sized pores and method of separating polarizable material using the same 审中-公开
标题翻译：微流体装置包括具有纳米至微孔的膜和使用其分离可极化材料的方法
公开(公告)号：US20060196772A1
公开(公告)日：2006-09-07
申请号：US11350479
申请日：2006-02-09
申请人： Sook-young Kim , Yoon-kyoung Cho , Soo-hwan Jeong , Jin-tae Kim , Chin-sung Park
发明人： Sook-young Kim , Yoon-kyoung Cho , Soo-hwan Jeong , Jin-tae Kim , Chin-sung Park
IPC分类号： B03C5/02
CPC分类号： B03C5/026
摘要： Provided are a microfluidic device for separating polarizable analytes via dielectrophoresis, the device including: a microchannel including a membrane having nano- to micro-sized pores; at lest two electrodes generating a spaciously non-uniform electric field in the nano- to micro-sized pores when an AC voltage is applied; and a power source applying the AC voltage to the electrodes, and a method of separating polarizable target materials using the device.
摘要翻译：提供了一种用于通过介电电泳分离可极化分析物的微流体装置，该装置包括：包含具有纳米至微小孔的膜的微通道; 当施加AC电压时，至少两个电极在纳米至微孔中产生宽敞不均匀的电场; 以及向电极施加AC电压的电源，以及使用该装置分离可极化的目标材料的方法。

10. 发明申请

US20050145835A1 Emitter for electron-beam projection lithography system and manufacturing method thereof 有权
公开(公告)号：US20050145835A1
公开(公告)日：2005-07-07
申请号：US11057469
申请日：2005-02-15
申请人： In-kyeong Yoo , Chang-wook Moon , Soo-hwan Jeong , Dong-wook Kim
发明人： In-kyeong Yoo , Chang-wook Moon , Soo-hwan Jeong , Dong-wook Kim
IPC分类号： G03F7/20 , H01J1/312 , H01J9/02 , H01J37/06 , H01J37/073 , H01J37/305 , H01L21/027 , H01L29/06 , H01L21/00
CPC分类号： B82Y10/00 , H01J1/312 , H01J9/022 , H01J9/027 , H01J2237/31774 , H01J2237/31783
摘要： An emitter for an electron-beam projection lithography (EPL) system and a manufacturing method therefor are provided. The electron-beam emitter includes a substrate, an insulating layer overlying the substrate, and a gate electrode including a base layer formed on top of the insulating layer to a uniform thickness and an electron-beam blocking layer formed on the base layer in a predetermined pattern. The manufacturing method includes steps of: preparing a substrate; forming an insulating layer on the substrate; forming a base layer of a gate electrode by depositing a conductive metal on the insulating layer to a predetermined thickness; forming an electron-beam blocking layer of the gate electrode by depositing a metal capable of anodizing on the base layer to a predetermined thickness; and patterning the electron-beam blocking layer in a predetermined pattern by anodizing. The emitter provides a uniform electric field within the insulating layer and simplify the manufacturing method therefor.

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