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    • 3. 发明公开
    • Direct-boring device
    • 直接装置
    • KR20100112287A
    • 2010-10-19
    • KR20090030723
    • 2009-04-09
    • SONG YANG SOO
    • SONG YANG SOO
    • E02D3/12E21B10/36
    • E02D3/12E02D2200/1685E02D2250/003E02D2300/0029E02D2600/20E21B10/36
    • PURPOSE: A work punching apparatus is provided to easily separate an adapter from a puncture bit by rotating the adapter in an opposite direction. CONSTITUTION: A work punching apparatus is as follows. A connecting shoe is installed to the bottom of a cylindrical casing. A puncture bit(30) is installed in the connecting shoe to rotate. A bonding groove(31) is formed on the center of upper surface of the puncture bit and is formed to protrude a pair of locking projection parts(32) to the inside of the sidewall of the bonding groove. A guideline extension part(34) is formed between the bottom of the locking projection part and a floor side(33) of the bonding groove.
    • 目的:提供一种工作冲孔装置,通过沿相反方向旋转适配器,可以容易地将适配器与穿刺针分离。 构成:工作冲孔装置如下。 连接靴安装在圆筒形壳体的底部。 穿孔(30)安装在连接靴中以旋转。 在穿孔的上表面的中心形成有接合槽31,并且形成为将一对锁定突起部(32)突出到接合槽的侧壁内侧。 在锁定突出部的底部和接合槽的地板侧(33)之间形成有引导延伸部(34)。
    • 8. 发明申请
    • METHOD FOR MANUFACTURING SUBSTRATE FOR LIGHT EMITTING DIODE, SUBSTRATE FOR LIGHT EMITTING DIODE MANUFACTURED THEREBY, AND METHOD FOR MANUFACTURING LIGHT EMITTING DIODE PROVIDED WITH SUBSTRATE FOR LIGHT EMITTING DIODE
    • 制造用于发光二极管的基板的方法,由其制造的发光二极管的基板以及用于制造发光二极管的方法以及用于发光二极管的基板
    • WO2013012194A3
    • 2013-03-14
    • PCT/KR2012005465
    • 2012-07-10
    • POSTECH ACAD IND FOUNDLEE JONG LAMLEE HWAN KEONSON JUN HOSONG YANG HEEKIM BUEM JOON
    • LEE JONG LAMLEE HWAN KEONSON JUN HOSONG YANG HEEKIM BUEM JOON
    • H01L33/20H01L33/22
    • H01L33/007H01L33/22H01L33/32
    • The present invention relates to a method for manufacturing a substrate for a light emitting diode, a substrate for a light emitting diode manufactured thereby, and a method for manufacturing a light emitting diode provided with the substrate for a light emitting diode. The method for manufacturing a substrate for a light emitting diode, according to the present invention, comprises the steps of: coating the upper surface of a predetermined substrate member with a nanostructure, which comprises a material that is easier for dry etching than the substrate member; forming an upper surface uneven portion on the upper surface of the substrate member by dry etching the nanostructure and the substrate member, using the nanostructure as a mask; coating the lower surface of the substrate member with the nanostructure; and forming a lower surface uneven portion on the lower surface of the substrate member by dry etching the nanostructure and the substrate member, using the nanostructure as the mask. The present invention makes it possible to manufacture the substrate for a light emitting diode, which is provided with the uneven portion that is easily formed by coating the nanostructure and using same as the mask for dry etching, instead of using photolithography patterning, which has a high manufacturing cost and is complicated, and thus to reduce manufacturing time and cost of the substrate for a light emitting diode.
    • 发光二极管用基板的制造方法,由此制造的发光二极管用基板以及具备该发光二极管用基板的发光二极管的制造方法技术领域本发明涉及一种发光二极管用基板的制造方法, 根据本发明的制造用于发光二极管的基板的方法包括以下步骤:用预定基板构件的上表面涂覆纳米结构,该纳米结构包括比基板构件更容易干蚀刻的材料 ; 使用纳米结构作为掩模,通过干蚀刻纳米结构和衬底部件在衬底部件的上表面上形成上表面不平坦部分; 用纳米结构涂覆衬底构件的下表面; 以及使用纳米结构作为掩模,通过干蚀刻纳米结构和基底构件在基底构件的下表面上形成下表面不平坦部分。 本发明使得可以制造用于发光二极管的衬底,该衬底设置有通过涂覆纳米结构并将其用作干法刻蚀用掩模而容易地形成的不平坦部分,而不是使用光刻图案化,其具有 制造成本高且复杂,并且因此减少用于发光二极管的衬底的制造时间和成本。
    • 9. 发明申请
    • METHOD FOR MANUFACTURING NANO-IMPRINT MOULD, METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE USING THE NANO IMPRINT MOULD MANUFACTURED THEREBY, AND LIGHT-EMITTING DIODE MANUFACTURED THEREBY
    • 制造纳米印模的方法,使用其制造的纳米印花模制造发光二极管的方法和制造的发光二极管
    • WO2012091271A3
    • 2012-08-23
    • PCT/KR2011008158
    • 2011-10-28
    • POSTECH ACAD IND FOUNDLEE JONG LAMSON JUN HOSONG YANG HEE
    • LEE JONG LAMSON JUN HOSONG YANG HEE
    • B29C33/38B29C59/02G03F7/00
    • H01L33/52B82Y10/00B82Y40/00G03F7/0002G03F7/0017H01L21/02019H01L21/30617H01L29/0665H01L33/005H01L33/0075
    • The present invention relates to a method for manufacturing a nano-imprint mould, a light-emitting diode using same, and a method for manufacturing same. The method for manufacturing a light-emitting diode of the present invention comprises: a step for forming on a temporary substrate an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer; a step for forming on the p-type nitride semiconductor layer a p-type electrode; a step for forming a conductive substrate on the p-type electrode; a step for exposing the n-type nitride semiconductor layer by removing the temporary substrate; a step for forming a nano-imprint resist layer on the n-type nitride semiconductor; a step for transferring a nano-pattern on the nano-imprint resist layer by pressurizing a nano-imprint mould on the nano-imprint resist layer; a step for isolating the nano-imprint mould from the nano-imprint resist layer having formed the nano-pattern; and a step for forming an n-type electrode by etching a part of the nano-imprint resist layer having formed the nano-pattern. The present invention enables a method for manufacturing a nano-imprint mould that can efficiently and economically form a nano-pattern for enhancing the light extraction efficiency of a light-emitting diode, a method for manufacturing a light-emitting diode, and a light-emitting diode using the nano-imprint mould.
    • 本发明涉及一种纳米压印模具的制造方法,使用该方法的发光二极管及其制造方法。 本发明的发光二极管的制造方法包括:在临时衬底上形成n型氮化物半导体层,发光层和p型氮化物半导体层的步骤; 在p型氮化物半导体层上形成p型电极的工序; 在p型电极上形成导电性基板的工序; 通过去除所述临时衬底来暴露所述n型氮化物半导体层的步骤; 在n型氮化物半导体上形成纳米压印抗蚀剂层的步骤; 通过在纳米压印抗蚀剂层上加压纳米压印模具将纳米图案转印到纳米压印抗蚀剂层上的步骤; 从形成纳米图案的纳米压印抗蚀剂层分离纳米压印模具的步骤; 以及通过蚀刻形成纳米图案的纳米压印抗蚀剂层的一部分来形成n型电极的步骤。 本发明使得能够有效且经济地形成用于提高发光二极管的光提取效率的纳米图案的纳米压印模具的制造方法,发光二极管的制造方法和发光二极管的制造方法, 使用纳米压印模具的发光二极管。
    • 10. 发明申请
    • METHOD AND DEVICE FOR OBTAINING PRECODING MATRIX
    • 用于获取预编码矩阵的方法和装置
    • WO2012014064A3
    • 2012-03-22
    • PCT/IB2011001777
    • 2011-06-24
    • ALCATEL LUCENTWU LUSONG YANGCHEN JINHUIYANG HONGWEILV DI
    • WU LUSONG YANGCHEN JINHUIYANG HONGWEILV DI
    • H04B7/04
    • H04B7/0456H04B7/0413H04B7/0469H04B7/0634H04B7/0639H04B7/065H04B7/10H04L25/03343H04L2025/03426H04L2025/03802
    • The present invention provides a method and device for obtaining precoding matrix. A network apparatus comprises a plurality of groups of cross-polarized linear array antennas. The method comprises: obtaining first channel indicating information indicating a first code word; obtaining second channel indicating information indicating a second code word; determining the precoding matrix, according to the first channel indicating information and the second channel indicating information, the first code word and/or the second code word comprises phase shifts and/or amplitude differences among the plurality of groups of cross-polarized linear array antennas. Since the first code word and the second code word for determining the precoding matrix by the network apparatus comprise phase shifts and amplitude differences among cross-polarized linear array antennas, the phase shifts and amplitude differences among cross-polarized linear array antennas are considered when the network apparatus sends downlink data according to the precoding matrix, so as to be able to improve the receiving quality of the sent data, thereby improving the system performance effectively.
    • 本发明提供一种获取预编码矩阵的方法和装置。 网络装置包括多组交叉极化线性阵列天线。 该方法包括:获得指示第一码字的第一信道指示信息; 指示第二码字的第二频道指示信息; 根据第一信道指示信息和第二信道指示信息确定预编码矩阵,第一码字和/或第二码字包括多组交叉极化线性阵列天线之间的相移和/或振幅差异 。 由于用于由网络装置确定预编码矩阵的第一码字和第二码字包括交叉极化线性阵列天线之间的相移和幅度差,所以当交叉极化线性阵列天线之间的相移和幅度差异 网络设备根据预编码矩阵发送下行链路数据,从而能够提高发送数据的接收质量,从而有效提高系统性能。