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1. 发明授权

US4360919A Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US4360919A
公开(公告)日：1982-11-23
申请号：US185806
申请日：1980-09-10
申请人： Takao Fujiwara , Kiyoshi Hanamitsu , Sigeo Ohsaka , Hiroshi Ishikawa , Nobuyuki Takagi , Katsuharu Segi
发明人： Takao Fujiwara , Kiyoshi Hanamitsu , Sigeo Ohsaka , Hiroshi Ishikawa , Nobuyuki Takagi , Katsuharu Segi
IPC分类号： H01L21/208 , H01S5/00 , H01S5/223 , H01S3/19
CPC分类号： H01L33/24 , H01S5/2232
摘要： An improved semiconductor light emitting device having a stabilized lateral mode oscillation and device current.In the present invention, a current rejecting layer and an etch-back preventive layer are added to a semiconductor laser provided with a clad layer composed of a projecting portion for confining light from an active layer and a portion for passing the light. The thicknesses of the layers, the relationships of forbidden band widths of the layers and their conductivity type are all specified. An easily manufactured semiconductor laser with an excellent current limit function and optical guide function are obtained and the lateral mode oscillation oscillation is stable.
摘要翻译：一种具有稳定的横向振荡和器件电流的改进的半导体发光器件。在本发明中，向设置有由用于限制来自有源层的光和用于使光通过的部分的用于限制光的突出部分的包覆层的半导体激光器中添加电流抑制层和防回蚀层。层的厚度，层的禁带宽度的关系及其导电类型都是规定的。获得具有优异的限流功能和光导功能的容易制造的半导体激光器，并且横向振荡振荡是稳定的。

2. 发明授权

US5777792A Optical film, an antireflection film, a reflection film, a method for forming the optical film, the antireflection film or the reflection film and an optical device 失效
标题翻译：光学膜，抗反射膜，反射膜，形成光学膜的方法，抗反射膜或反射膜以及光学装置
公开(公告)号：US5777792A
公开(公告)日：1998-07-07
申请号：US278074
申请日：1994-07-20
申请人： Nobumasa Okada , Sigeo Ohsaka , Shuichi Miura
发明人： Nobumasa Okada , Sigeo Ohsaka , Shuichi Miura
IPC分类号： G02B1/11 , C03C17/34 , C23C14/06 , C23C14/48 , G02B1/115 , H01S5/028 , G02B1/10 , H01S3/19
CPC分类号： C03C17/3435 , G02B1/10 , C03C2217/734 , H01S5/028 , Y10S359/90
摘要： An optical film of the present invention is of multi-layered structure which has a high-refractive-index layer composed of titanium oxidic nitride, aluminum oxidic nitride, or silicon oxidic nitride.
摘要翻译：本发明的光学膜是具有由氧化钛钛，氧化铝铝，氧化硅等构成的高折射率层的多层结构。

3. 发明授权

US4306351A Method for producing a semiconductor laser element 失效
标题翻译：半导体激光元件的制造方法
公开(公告)号：US4306351A
公开(公告)日：1981-12-22
申请号：US185810
申请日：1980-09-10
申请人： Sigeo Ohsaka , Kanji Fujiwara , Takao Fujiwara
发明人： Sigeo Ohsaka , Kanji Fujiwara , Takao Fujiwara
IPC分类号： H01L21/301 , H01L21/304 , H01L21/78 , H01S5/00 , H01S5/02 , H01L31/18
CPC分类号： H01L33/025 , H01L21/3043 , H01L21/78 , H01L33/0062 , H01S5/0201
摘要： A method for producing semiconductor laser elements from a wafer wherein the wafer is prepared having light emitting regions and then the wafer is scribed and cracked in order to form the semiconductor elements. The scribing is executed on a major surface of the wafer in such a way that scratches are formed along a separation line only on the surface of a crystal substrate of the wafer but not on the substrate over the formed light emitting regions. The cleaved surface developed by the cracking step is very flat in an area where the light emitting region is exposed to provide a mirror surface that forms a laser resonator. Desirably, the major surface of the wafer is covered with a protective film on at least the part of the surface over the light emitting region, prior to performing the scribe step. More desirably, this protective film consists of an electrode metal, such as Au or a resin, such as a photoresist material. The scribing is executed wherein scratches are not formed on the crystal substrate surface under the region that is covered with the protection film. This method effectively realizes the cleavage process and results in excellent reproducibility of the physical dimensions of the laser element, while obtaining highly satisfactory characteristics of a laser resonator.
摘要翻译：一种用于从晶片制造半导体激光元件的方法，其中制备具有发光区域的晶片，然后将晶片划线和破裂以形成半导体元件。在晶片的主表面上执行刻划，使得仅在晶片的晶体基板的表面上沿着分离线形成划痕，而不在形成的发光区域上的基板上形成划痕。通过裂纹步骤形成的裂开表面在发光区域暴露的区域中非常平坦，以提供形成激光谐振器的镜面。理想地，在执行划线步骤之前，晶片的主表面在发光区域的至少部分表面上被保护膜覆盖。更优选地，该保护膜由诸如Au的电极金属或诸如光致抗蚀剂材料的树脂组成。执行划线，其中在被保护膜覆盖的区域下的结晶基板表面上没有形成划痕。该方法有效地实现了切割过程，并且在获得激光谐振器的非常令人满意的特性的同时，导致了激光元件的物理尺寸的优异再现性。

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