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    • 2. 发明申请
    • INTEGRATED POWER AMPLIFIER CIRCUIT
    • 集成功率放大器电路
    • WO2005002044B1
    • 2005-03-24
    • PCT/CA2004000879
    • 2004-06-17
    • SIGE SEMICONDUCTOR INCDOHERTY MARKGILLIS JOHNMCPARTLIN MICHAELHELMS DAVIDANTOGNETTI PHILLIP
    • DOHERTY MARKGILLIS JOHNMCPARTLIN MICHAELHELMS DAVIDANTOGNETTI PHILLIP
    • H03F1/02H03F1/30H03F3/195
    • H03F3/195H03F1/0233H03F1/0261H03F1/30H03F2200/447H03F2200/451H03F2200/504
    • Prior art architectures of power amplifiers employ a substantial die area, and utilize multiple integrated circuit technologies with a net higher manufacturing cost and large associated packaging area. A new scheme is presented wherein several sense and control signals are used to provide fine and gross control over the key figures of merit associated with integrated semiconductor power amplifiers. How and where these sense and control signals are used is crucial to achieving the most manufacturable and most economic integrated amplifier. In accordance with a first embodiment of the invention, a Dual Feedback-Low power regulation circuit for a three-stage power amplifier integrated circuit is provided. In accordance with a second embodiment of the invention, a current source feedback circuit having low RF output signal power regulation for a three-stage power amplifier integrated circuit is provided. In accordance with a third embodiment of the invention, a detector circuit in the form of an integrated logarithmic current detector circuit in conjunction with a three stage power amplifier integrated circuit. The three embodiments of the invention advantageously overcome the limitations of the prior art.
    • 功率放大器的现有技术架构采用大量裸片区域,并且利用多个集成电路技术,净制造成本较高且相关联的封装面积较大。 提出了一种新的方案,其中使用多个感测和控制信号来提供对与集成半导体功率放大器相关的关键性能指标的精确和总体控制。 如何以及在何处使用这些感测和控制信号对于实现最可制造且最经济的集成放大器是至关重要的。 根据本发明的第一实施例,提供了一种用于三级功率放大器集成电路的双反馈 - 低功率调节电路。 根据本发明的第二实施例,提供了一种用于三级功率放大器集成电路的具有低RF输出信号功率调节的电流源反馈电路。 根据本发明的第三实施例,一种结合三级功率放大器集成电路的集成对数电流检测器电路形式的检测器电路。 本发明的三个实施例有利地克服了现有技术的限制。
    • 3. 发明申请
    • POWER DETECTORS FOR MEASURING POWER COUPLING
    • 用于测量电力耦合的电力检测器
    • WO2004083874A1
    • 2004-09-30
    • PCT/CA2003/001110
    • 2003-07-23
    • SIGE SEMICONDUCTOR INC.MACPHAIL, Phil
    • MACPHAIL, Phil
    • G01R27/06
    • G01R27/06
    • A power detector for measuring the power transfer between a circuit for emitting an electrical signal and a first conductor that receives the emitted electrical signal. The emitted signal causes a magnetic field to be generated in the first conductor. A coupling detection circuit measures an electric current that arises in a second conductor that is proximate and electrically coupled to the first conductor. The measured electric current in the second conductor is used to determine the power transfer between the emitting circuit and the first conductor. The first and second conductors can be bond wires within an integrated circuit package, and the coupling detection circuit can be disposed in a semiconductor substrate within the integrated circuit package.
    • 一种功率检测器,用于测量用于发射电信号的电路与接收所发射的电信号的第一导体之间的功率传递。 发射的信号导致在第一导体中产生磁场。 耦合检测电路测量在靠近并电耦合到第一导体的第二导体中产生的电流。 第二导体中测量的电流用于确定发射电路和第一导体之间的功率传递。 第一和第二导体可以是集成电路封装内的接合线,并且耦合检测电路可以设置在集成电路封装内的半导体衬底中。
    • 7. 发明专利
    • AT440380T
    • 2009-09-15
    • AT04789699
    • 2004-10-08
    • SIGE SEMICONDUCTOR INC
    • TRAINOR ALAN
    • H01L27/02H01L21/70H04B1/00H04B1/04H04B1/40
    • An electronic module that operates at various radio frequency standards is provided. The module includes a first integrated circuit die formed in a first semiconductor substrate and manufactured using a first semiconductor process. Disposed within the first integrated circuit is the first signal conditioning circuit for performing a function and the first and second ancillary circuits. The first ancillary circuit electrically coupled to the first signal conditioning circuit for use by the first signal conditioning circuit during operation thereof. The second ancillary circuit is for other than being used by the first signal conditioning circuit during operation thereof since the second integrated circuit die is electrically coupled to the second ancillary circuit and formed in the second semiconductor substrate and co-located with the first integrated circuit within the module. The second integrated circuit die benefits from the operation of the second ancillary circuit for functioning thereof for performing a similar function to the first signal conditioning circuit.
    • 10. 发明专利
    • Integrated power amplifier circuit
    • AU2004252928A1
    • 2005-01-06
    • AU2004252928
    • 2004-06-17
    • SIGE SEMICONDUCTOR INC
    • ANTOGNETTI PHILLIPDOHERTY MARKHELMS DAVIDGILLIS JOHNMCPARTLIN MICHAEL
    • H03F1/30H03F1/02H03F3/195
    • Prior art architectures of power amplifiers employ a substantial die area, and utilize multiple integrated circuit technologies with a net higher manufacturing cost and large associated packaging area. A new scheme is presented wherein several sense and control signals are used to provide fine and gross control over the key figures of merit associated with integrated semiconductor power amplifiers. How and where these sense and control signals are used is crucial to achieving the most manufacturable and most economic integrated amplifier. In accordance with a first embodiment of the invention, a Dual Feedback-Low power regulation circuit for a three-stage power amplifier integrated circuit is provided. In accordance with a second embodiment of the invention, a current source feedback circuit having low RF output signal power regulation for a three-stage power amplifier integrated circuit is provided. In accordance with a third embodiment of the invention, a detector circuit in the form of an integrated logarithmic current detector circuit in conjunction with a three stage power amplifier integrated circuit. The three embodiments of the invention advantageously overcome the limitations of the prior art.