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1. 发明授权

US4676964A Process for purifying silica 失效
标题翻译：二氧化硅纯化方法
公开(公告)号：US4676964A
公开(公告)日：1987-06-30
申请号：US857376
申请日：1986-04-30
申请人： Akira Seki , Yuuki Narita , Yoshio Aso , Shunro Nagata
发明人： Akira Seki , Yuuki Narita , Yoshio Aso , Shunro Nagata
IPC分类号： C01B33/158 , C01B33/12
CPC分类号： C01B33/158
摘要： This invention concerns a process for purifying silica produced from an alkali silicate aqueous solution, which usually contains more than 200 ppm of impurities, to silica containing less than 30 ppm of impurities. Concretely, the purification process of silica comprises: dispersing silica gel, containing a lot of impurities, in water and filtering the solution; dispersing the filtered out silica gel again in an aqueous solution of pH 2 or less and filtering the aqueous solution; putting the silica gel to heat-treatment and acid-treatment with continuous stirring in order to break the inside siloxane link and dissolve out impurities therefrom and filtering the acid solution; rinsing a produced cake with pure water to wash away the inside residual solution and drying the cake.
摘要翻译：本发明涉及一种将通常含有大于200ppm杂质的碱金属硅酸盐水溶液生产的二氧化硅纯化成含有少于30ppm杂质的二氧化硅的方法。具体地说，二氧化硅的纯化方法包括：将含有大量杂质的硅胶分散在水中并过滤溶液; 将滤出的硅胶再次分散在pH2以下的水溶液中，过滤水溶液; 将硅胶在连续搅拌下进行热处理和酸处理，以破坏内部硅氧烷连接并溶解杂质并过滤酸溶液; 用纯水冲洗生产的滤饼以洗涤内部残留溶液并干燥滤饼。

2. 发明申请

US20110081549A1 AIN BULK SINGLE CRYSTAL, SEMICONDUCTOR DEVICE USING THE SAME AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译： AIN BULK单晶，使用其的半导体器件及其制造方法
公开(公告)号：US20110081549A1
公开(公告)日：2011-04-07
申请号：US12736312
申请日：2009-03-26
申请人： Shunro Nagata , Albrecht Winnacker , Boris M. Epelbaum , Matthias Bickermann , Octavian Filip , Paul Heimann
发明人： Shunro Nagata , Albrecht Winnacker , Boris M. Epelbaum , Matthias Bickermann , Octavian Filip , Paul Heimann
IPC分类号： C30B23/02 , C01B21/072
CPC分类号： C30B29/403 , C30B23/025 , Y10T428/2982
摘要： An object of the present invention is to provide, even when a single crystal of a material other than AlN is used as a crystal, an AlN bulk single crystal having fewer defects and high quality, a method for producing such an AlN bulk single crystal, and a semiconductor device. A feature is to select, as a surface 1a of a hexagonal single crystal substrate serving as a seed crystal 1, a plane inclined at an angle of 10° to 80° with respect to the C-plane (FIG. 1(a)), and to grow an AlN single crystal 2 as a growth plane 2a on the surface 1a by a sublimation method (FIG. 1(b)).
摘要翻译：本发明的目的在于，即使使用AlN以外的材料的单晶作为结晶，也可以提供缺陷少，质量好的AlN块体单晶，制造这种AlN体积单晶的方法，和半导体器件。特征在于，作为用作晶种1的六边形单晶衬底的表面1a选择相对于C面倾斜10°至80°的平面（图1（a））并且通过升华法在表面1a上生长作为生长面2a的AlN单晶2（图1（b））。

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