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1. 发明申请

US20130248865A1 SOLID-STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：US20130248865A1
公开(公告)日：2013-09-26
申请号：US13729140
申请日：2012-12-28
申请人： Shuichi TORIYAMA , Koichi KOKUBUN , Hiroki SASAKI
发明人： Shuichi TORIYAMA , Koichi KOKUBUN , Hiroki SASAKI
IPC分类号： H01L31/105
CPC分类号： H01L31/1055 , H01L27/1461 , H01L27/14643 , H01L31/109
摘要： According to an embodiment, a solid-state imaging device includes a photoelectric, conversion element. The photoelectric conversion element includes a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer. In the solid-state imaging device, D2m3/L2m3×ni32/N2
摘要翻译：根据实施例，固态成像装置包括光电转换元件。光电转换元件包括第一半导体层，第二半导体层和第三半导体层。在固态成像装置中，建立了D2m3 / L2m3×ni32 / N2

2. 发明申请

US20090059669A1 NAND TYPE NONVOLATILE SEMICONDUCTOR MEMORY DEVICE HAVING SIDEFACE ELECTRODE SHARED BY MEMORY CELLS 失效
标题翻译：具有由存储单元共享的边缘电极的NAND型非易失性半导体存储器件
公开(公告)号：US20090059669A1
公开(公告)日：2009-03-05
申请号：US12052149
申请日：2008-03-20
申请人： Shuichi Toriyama , Kazuya Matsuzawa
发明人： Shuichi Toriyama , Kazuya Matsuzawa
IPC分类号： G11C11/34
CPC分类号： G11C16/0483 , H01L21/84 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L27/1203
摘要： An electrically erasable programmable read-only memory (EEPROM) device of the NAND type having sideface electrodes as auxiliary electrodes on the opposite lateral surfaces of a transistor channel region to thereby improve operation margins is disclosed. The NAND EEPROM, also known as NAND flash memory, has on a semiconductive substrate an array of memory cells including a serial combination of memory cell transistors. Each of memory cell transistors has a pair of source and drain regions, a channel region, a tunnel insulator film, a charge storage layer, a control dielectric film, a control electrode, a sideface dielectric film on the sidefaces of the channel region, and sideface electrodes which are formed on the side surfaces of channel region with the channel region being laterally interposed therebetween. The sideface electrodes are commonized or “shared” by adjacent ones of the serially coupled memory cell transistors.
摘要翻译：公开了一种NAND型电可擦除可编程只读存储器（EEPROM）器件，其具有在晶体管沟道区域的相对侧表面上的辅助电极的侧面电极，从而提高了操作余量。 NAND EEPROM（也称为NAND闪速存储器）在半导体衬底上具有包括存储单元晶体管的串联组合的存储单元阵列。每个存储单元晶体管具有一对源极和漏极区，沟道区，隧道绝缘膜，电荷存储层，控制电介质膜，控制电极，沟道区域的侧面上的侧面电介质膜，以及在通道区域的侧表面上形成有横向插入其间的侧面电极。侧面电极被串联耦合的存储单元晶体管中的相邻电极共同化或“共享”。

3. 发明授权

US08791542B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US08791542B2
公开(公告)日：2014-07-29
申请号：US13729140
申请日：2012-12-28
申请人： Shuichi Toriyama , Koichi Kokubun , Hiroki Sasaki
发明人： Shuichi Toriyama , Koichi Kokubun , Hiroki Sasaki
IPC分类号： H01L31/06 , H01L27/146 , H01L31/109 , H01L31/105
CPC分类号： H01L31/1055 , H01L27/1461 , H01L27/14643 , H01L31/109
摘要： According to an embodiment, a solid-state imaging device includes a photoelectric, conversion element. The photoelectric conversion element includes a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer. In the solid-state imaging device, D2m3/L2m3×ni32/N2
摘要翻译：根据实施例，固态成像装置包括光电转换元件。光电转换元件包括第一半导体层，第二半导体层和第三半导体层。在固态成像装置中，建立了D2m3 / L2m3×ni32 / N2

4. 发明授权

US07643346B2 NAND type nonvolatile semiconductor memory device having sideface electrode shared by memory cells 失效
标题翻译：具有由存储单元共享的侧面电极的NAND型非易失性半导体存储器件
公开(公告)号：US07643346B2
公开(公告)日：2010-01-05
申请号：US12052149
申请日：2008-03-20
申请人： Shuichi Toriyama , Kazuya Matsuzawa
发明人： Shuichi Toriyama , Kazuya Matsuzawa
IPC分类号： G11C11/34
CPC分类号： G11C16/0483 , H01L21/84 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L27/1203
摘要： An electrically erasable programmable read-only memory (EEPROM) device of the NAND type having sideface electrodes as auxiliary electrodes on the opposite lateral surfaces of a transistor channel region to thereby improve operation margins is discusssed. The NAND EEPROM, also known as NAND flash memory, has on a semiconductive substrate an array of memory cells including a serial combination of memory cell transistors. Each of memory cell transistors has a pair of source and drain regions, a channel region, a tunnel insulator film, a charge storage layer, a control dielectric film, a control electrode, a sideface dielectric film on the sidefaces of the channel region, and sideface electrodes which are formed on the side surfaces of channel region with the channel region being laterally interposed therebetween. The sideface electrodes are commonized or “shared” by adjacent ones of the serially coupled memory cell transistors.
摘要翻译：在具有侧面电极作为辅助电极的NAND类型的电可擦除可编程只读存储器（EEPROM）器件的晶体管沟道区域的相对侧表面上，从而提高了操作余量。 NAND EEPROM（也称为NAND闪速存储器）在半导体衬底上具有包括存储单元晶体管的串联组合的存储单元阵列。每个存储单元晶体管具有一对源极和漏极区，沟道区，隧道绝缘膜，电荷存储层，控制电介质膜，控制电极，沟道区域的侧面上的侧面电介质膜，以及在通道区域的侧表面上形成有横向插入其间的侧面电极。侧面电极被串联耦合的存储单元晶体管中的相邻电极共同化或“共享”。

5. 发明申请

US20070021953A1 Device simulation apparatus, device simulation method, and device simulation program 审中-公开
标题翻译：设备仿真设备，设备仿真方法和设备仿真程序
公开(公告)号：US20070021953A1
公开(公告)日：2007-01-25
申请号：US11486034
申请日：2006-07-14
申请人： Shuichi Toriyama , Kazuya Matsuzawa
发明人： Shuichi Toriyama , Kazuya Matsuzawa
IPC分类号： G06G7/48 , G06G7/58
CPC分类号： G06F17/5018 , G06F2217/10 , G06F2217/78
摘要： A device simulation apparatus has a mesh dividing unit, an impurity concentration setting unit, a reference plane setting unit, an impurity profile determination unit, an impurity surface density determination unit configured to determine the impurity surface density on a surface in a predetermined direction, the surface passing through the position of each impurity atom, a folding unit which folds the impurity surface density corresponding to each impurity atom determined by the impurity surface density determination unit, on the reference plane, and an electric property estimating unit configured to estimate electric properties of the semiconductor device structure by using the impurity surface density on the reference plane folded by the folding unit.
摘要翻译：设备模拟装置具有网格分割单元，杂质浓度设定单元，基准面设定单元，杂质分布确定单元，被配置为确定表面上的预定方向上的杂质表面密度的杂质表面密度确定单元，表面通过每个杂质原子的位置，折叠单元，其将由杂质表面密度确定单元确定的每个杂质原子对应的杂质表面密度折叠在参考平面上;电性估计单元，被配置为估计电特性通过使用由折叠单元折叠的参考平面上的杂质表面密度的半导体器件结构。

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