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1. 发明申请

US20110141651A1 POWER SEMICONDUCTOR DEVICE FOR IGNITER 有权
标题翻译： IGNITER的功率半导体器件
公开(公告)号：US20110141651A1
公开(公告)日：2011-06-16
申请号：US12877538
申请日：2010-09-08
申请人： Shinsuke GODO , Kazuhiro Nishimura , Kazuki Yamada
发明人： Shinsuke GODO , Kazuhiro Nishimura , Kazuki Yamada
IPC分类号： F23Q3/00
CPC分类号： F23Q3/004
摘要： A power semiconductor device for an igniter comprises: a semiconductor switching device causing a current to flow through a primary side of an ignition coil or shutting off the current; and an integrated circuit driving and controlling the semiconductor switching device, wherein the integrated circuit includes: a first discharge device discharging charge accumulated on a control terminal of the semiconductor switching device and shutting off the semiconductor switching device so as to generate ignition plug spark voltage on a secondary side of the ignition coil during a normal operation; and a second discharge device slower discharging the charge accumulated on the control terminal in comparison with the first discharge device and shutting off the semiconductor switching device so that a voltage on the second side of the ignition coil is equal to or lower than the ignition plug spark voltage during an abnormal state.
摘要翻译：一种用于点火器的功率半导体器件包括：使电流流过点火线圈的初级侧或切断电流的半导体开关器件; 以及驱动和控制所述半导体开关器件的集成电路，其中所述集成电路包括：第一放电器件，放电累积在所述半导体开关器件的控制端子上的电荷，并且切断所述半导体开关器件，以产生点火插头火花塞电压在正常操作期间点火线圈的次级侧; 并且与第一放电装置相比，第二放电装置放慢对蓄积在控制端子上的电荷的放电，并且切断半导体开关装置，使得点火线圈的第二侧上的电压等于或低于火花塞火花异常状态下的电压。

2. 发明申请

US20110141640A1 POWER SEMICONDUCTOR DEVICE FOR IGNITER 有权
标题翻译： IGNITER的功率半导体器件
公开(公告)号：US20110141640A1
公开(公告)日：2011-06-16
申请号：US12877435
申请日：2010-09-08
申请人： Shinsuke GODO , Yukio YASUDA , Atsunobu KAWAMOTO
发明人： Shinsuke GODO , Yukio YASUDA , Atsunobu KAWAMOTO
IPC分类号： H02H3/20
CPC分类号： F02P3/0442 , F02D2041/2048 , F02D2041/2051 , F02P3/0554
摘要： A power semiconductor device for an igniter comprises: a first semiconductor switching device; and an integrated circuit, wherein the integrated circuit includes: a second semiconductor switching device connected in parallel with the first semiconductor switching device and having a smaller current capacity than a current capacity of the first semiconductor switching device; a delay circuit delaying a control input signal so that the second semiconductor switching device is energized prior to the first semiconductor switching device; a third semiconductor switching device including a thyristor structure connected to a high voltage side main terminal of the second semiconductor switching device and being made conductive by a part of a main current flowing through the energized second semiconductor switching device; and a first excess voltage detection circuit stopping the first semiconductor switching device when voltage on the high voltage side main terminal is equal to or more than predetermined voltage.
摘要翻译：一种用于点火器的功率半导体器件包括：第一半导体开关器件; 以及集成电路，其中所述集成电路包括：与所述第一半导体开关器件并联连接并且具有比所述第一半导体开关器件的电流容量更小的电流容量的第二半导体开关器件; 延迟电路延迟控制输入信号，使得第二半导体开关器件在第一半导体开关器件之前被通电; 第三半导体开关器件，其包括与所述第二半导体开关器件的高电压侧主端子连接的晶闸管结构，并且通过流过所述通电的第二半导体开关器件的主电流的一部分导通; 以及当所述高压侧主端子上的电压等于或大于预定电压时，使所述第一半导体开关器件停止的第一过电压检测电路。

3. 发明授权

US08570780B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08570780B2
公开(公告)日：2013-10-29
申请号：US13396934
申请日：2012-02-15
申请人： Shinsuke Godo , Atsunobu Kawamoto
发明人： Shinsuke Godo , Atsunobu Kawamoto
IPC分类号： H02H7/122 , H02H9/04
CPC分类号： H01L29/7395 , H01L23/49575 , H01L24/45 , H01L24/48 , H01L24/49 , H01L27/0688 , H01L29/0619 , H01L2224/05553 , H01L2224/0603 , H01L2224/32145 , H01L2224/45124 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48247 , H01L2224/4846 , H01L2224/49111 , H01L2924/00014 , H01L2924/12035 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H02M2001/344 , H01L2924/00 , H01L2224/85399 , H01L2224/05599
摘要： A semiconductor device includes: a parallel connection structure 1 between a first node and a second node; a first snubber device and a second snubber device having a clamp level that is the same as or higher than the output voltage of a power source section. One terminal of the first snubber device is connected through the first node to one end of the parallel connection structure, the opposite terminal of the first snubber device is connected through a third node to one terminal of the second snubber device, and the opposite terminal of the second snubber device is connected through the second node to the opposite end of the parallel connection structure. Electric power is fed back to the power source section through the second and third nodes.
摘要翻译：半导体器件包括：在第一节点和第二节点之间的并行连接结构1; 第一缓冲装置和第二缓冲装置，其具有与电源部分的输出电压相同或更高的钳位电平。第一缓冲装置的一个端子通过第一节点连接到并联连接结构的一端，第一缓冲装置的相对端通过第三节点连接到第二缓冲装置的一个端子，第二缓冲装置通过第二节点连接到并联连接结构的相对端。电力通过第二和第三节点反馈到电源部分。

4. 发明申请

US20110134581A1 POWER SEMICONDUCTOR DEVICE FOR IGNITER 审中-公开
标题翻译： IGNITER的功率半导体器件
公开(公告)号：US20110134581A1
公开(公告)日：2011-06-09
申请号：US12877348
申请日：2010-09-08
申请人： Shinsuke GODO , Yukio Yasuda , Atsunobu Kawamoto
发明人： Shinsuke GODO , Yukio Yasuda , Atsunobu Kawamoto
IPC分类号： F23Q3/00
CPC分类号： F02P3/0554 , H01L2924/0002 , H01L2924/00
摘要： A power semiconductor device for an igniter comprises: a semiconductor switching device causing a current to flow through a primary side of an ignition coil or shutting off the current flowing through the primary side of the ignition coil; an integrated circuit driving and controlling the semiconductor switching device; and a temperature sensing element sensing temperature of the semiconductor switching device, wherein the integrated circuit including an overheat protection circuit limiting a current through the semiconductor switching device to a value lower than a current through the semiconductor switching device during normal operation, when temperature sensed by the temperature sensing element is over predetermined temperature.
摘要翻译：一种用于点火器的功率半导体器件包括：半导体开关器件，其使电流流过点火线圈的初级侧或切断流过点火线圈的初级侧的电流; 驱动和控制半导体开关器件的集成电路; 以及温度感测元件感测半导体开关器件的温度，其中集成电路包括过热保护电路，其在正常操作期间将通过半导体开关器件的电流限制在低于通过半导体开关器件的电流的值，当温度由温度感测元件超过预定温度。

5. 发明授权

US08824177B2 Semiconductor device and snubber device having a SiC-MOSFET and a Zener diode 有权
标题翻译：具有SiC-MOSFET和齐纳二极管的半导体器件和缓冲器件
公开(公告)号：US08824177B2
公开(公告)日：2014-09-02
申请号：US13016275
申请日：2011-01-28
申请人： Shinsuke Godo
发明人： Shinsuke Godo
IPC分类号： H02H7/122 , H03K17/0814 , H02M1/34 , H01L23/495 , H01L23/00 , H01L29/866 , H01L49/02 , H01L27/06 , H01L29/16 , H01L29/06 , H01L29/78
CPC分类号： H02M1/34 , H01L23/49575 , H01L24/48 , H01L24/49 , H01L27/0629 , H01L28/20 , H01L29/0619 , H01L29/1608 , H01L29/7802 , H01L29/7808 , H01L29/7811 , H01L29/866 , H01L2224/05553 , H01L2224/48137 , H01L2224/48139 , H01L2224/48247 , H01L2224/49111 , H01L2924/00014 , H01L2924/12035 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/30107 , H03K17/08148 , Y02B70/1483 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device of the present invention includes a switching transistor, and a recovery diode and a snubber device which are mounted on a single conductive substrate (frame) on which the switching transistor is also mounted. The snubber device includes a SiC-MOSFET connected between an output terminal C and a reference terminal E of the switching transistor, a Zener diode formed between a gate terminal G and a drain terminal D of the SiC-MOSFET, and a resistor formed between the gate terminal G and a source terminal S of the SiC-MOSFET. The reference terminal E of the switching transistor, the source terminal S of the SiC-MOSFET, and an anode terminal of the recovery diode are commonly connected.
摘要翻译：本发明的半导体器件包括安装在其上也安装有开关晶体管的单个导电衬底（框架）上的开关晶体管和恢复二极管和缓冲器件。缓冲装置包括连接在开关晶体管的输出端子C和参考端子E之间的SiC-MOSFET，形成在SiC-MOSFET的栅极端子G和漏极端子D之间的齐纳二极管，以及形成在栅极端子G和SiC-MOSFET的源极端子S. 开关晶体管的参考端子E，SiC-MOSFET的源极端子S和恢复二极管的阳极端子共同连接。

6. 发明申请

US20110310645A1 SEMICONDUCTOR DEVICE AND SNUBBER DEVICE 有权
标题翻译：半导体器件和SNUBBER器件
公开(公告)号：US20110310645A1
公开(公告)日：2011-12-22
申请号：US13016275
申请日：2011-01-28
申请人： Shinsuke GODO
发明人： Shinsuke GODO
IPC分类号： H02H7/122 , H02H9/04
CPC分类号： H02M1/34 , H01L23/49575 , H01L24/48 , H01L24/49 , H01L27/0629 , H01L28/20 , H01L29/0619 , H01L29/1608 , H01L29/7802 , H01L29/7808 , H01L29/7811 , H01L29/866 , H01L2224/05553 , H01L2224/48137 , H01L2224/48139 , H01L2224/48247 , H01L2224/49111 , H01L2924/00014 , H01L2924/12035 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/30107 , H03K17/08148 , Y02B70/1483 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device of the present invention includes a switching transistor, and a recovery diode and a snubber device which are mounted on a single conductive substrate (frame) on which the switching transistor is also mounted. The snubber device includes a SiC-MOSFET connected between an output terminal C and a reference terminal E of the switching transistor, a Zener diode formed between a gate terminal G and a drain terminal D of the SiC-MOSFET, and a resistor formed between the gate terminal G and a source terminal S of the SiC-MOSFET. The reference terminal E of the switching transistor, the source terminal S of the SiC-MOSFET, and an anode terminal of the recovery diode are commonly connected.
摘要翻译：本发明的半导体器件包括安装在其上也安装有开关晶体管的单个导电衬底（框架）上的开关晶体管和恢复二极管和缓冲器件。缓冲装置包括连接在开关晶体管的输出端子C和参考端子E之间的SiC-MOSFET，形成在SiC-MOSFET的栅极端子G和漏极端子D之间的齐纳二极管，以及形成在栅极端子G和SiC-MOSFET的源极端子S. 开关晶体管的参考端子E，SiC-MOSFET的源极端子S和恢复二极管的阳极端子共同连接。

7. 发明授权

US08861175B2 Power semiconductor device for igniter 有权
标题翻译：点火器功率半导体装置
公开(公告)号：US08861175B2
公开(公告)日：2014-10-14
申请号：US12877538
申请日：2010-09-08
申请人： Shinsuke Godo , Kazuhiro Nishimura , Kazuki Yamada
发明人： Shinsuke Godo , Kazuhiro Nishimura , Kazuki Yamada
IPC分类号： F23Q3/00
CPC分类号： F23Q3/004
摘要： A power semiconductor device for an igniter comprises: a semiconductor switching device causing a current to flow through a primary side of an ignition coil or shutting off the current; and an integrated circuit driving and controlling the semiconductor switching device, wherein the integrated circuit includes: a first discharge device discharging charge accumulated on a control terminal of the semiconductor switching device and shutting off the semiconductor switching device so as to generate ignition plug spark voltage on a secondary side of the ignition coil during a normal operation; and a second discharge device slower discharging the charge accumulated on the control terminal in comparison with the first discharge device and shutting off the semiconductor switching device so that a voltage on the second side of the ignition coil is equal to or lower than the ignition plug spark voltage during an abnormal state.
摘要翻译：一种用于点火器的功率半导体器件包括：使电流流过点火线圈的初级侧或切断电流的半导体开关器件; 以及驱动和控制所述半导体开关器件的集成电路，其中所述集成电路包括：第一放电器件，放电累积在所述半导体开关器件的控制端子上的电荷并且切断所述半导体开关器件，以产生点火插头火花塞电压在正常操作期间点火线圈的次级侧; 并且与第一放电装置相比，第二放电装置放慢对蓄积在控制端子上的电荷的放电，并且切断半导体开关装置，使得点火线圈的第二侧上的电压等于或低于火花塞火花异常状态下的电压。

8. 发明授权

US08605408B2 Power semiconductor device for igniter 有权
标题翻译：点火器功率半导体装置
公开(公告)号：US08605408B2
公开(公告)日：2013-12-10
申请号：US12877435
申请日：2010-09-08
申请人： Shinsuke Godo , Yukio Yasuda , Atsunobu Kawamoto
发明人： Shinsuke Godo , Yukio Yasuda , Atsunobu Kawamoto
IPC分类号： F23Q3/00
CPC分类号： F02P3/0442 , F02D2041/2048 , F02D2041/2051 , F02P3/0554
摘要： A power semiconductor device for an igniter comprises: a first semiconductor switching device; and an integrated circuit, wherein the integrated circuit includes: a second semiconductor switching device connected in parallel with the first semiconductor switching device and having a smaller current capacity than a current capacity of the first semiconductor switching device; a delay circuit delaying a control input signal so that the second semiconductor switching device is energized prior to the first semiconductor switching device; a third semiconductor switching device including a thyristor structure connected to a high voltage side main terminal of the second semiconductor switching device and being made conductive by a part of a main current flowing through the energized second semiconductor switching device; and a first excess voltage detection circuit stopping the first semiconductor switching device when voltage on the high voltage side main terminal is equal to or more than a predetermined voltage.
摘要翻译：一种用于点火器的功率半导体器件包括：第一半导体开关器件; 以及集成电路，其中所述集成电路包括：与所述第一半导体开关器件并联连接并且具有比所述第一半导体开关器件的电流容量更小的电流容量的第二半导体开关器件; 延迟电路延迟控制输入信号，使得第二半导体开关器件在第一半导体开关器件之前被通电; 第三半导体开关器件，其包括与所述第二半导体开关器件的高电压侧主端子连接的晶闸管结构，并且通过流过所述通电的第二半导体开关器件的主电流的一部分导通; 以及当高电压侧主端子上的电压等于或大于预定电压时，第一过电压检测电路停止第一半导体开关器件。

9. 发明申请

US20120307532A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120307532A1
公开(公告)日：2012-12-06
申请号：US13396934
申请日：2012-02-15
申请人： Shinsuke Godo , Atsunobu Kawamoto
发明人： Shinsuke Godo , Atsunobu Kawamoto
IPC分类号： H02M7/5387
CPC分类号： H01L29/7395 , H01L23/49575 , H01L24/45 , H01L24/48 , H01L24/49 , H01L27/0688 , H01L29/0619 , H01L2224/05553 , H01L2224/0603 , H01L2224/32145 , H01L2224/45124 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48247 , H01L2224/4846 , H01L2224/49111 , H01L2924/00014 , H01L2924/12035 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H02M2001/344 , H01L2924/00 , H01L2224/85399 , H01L2224/05599
摘要： A semiconductor device includes: a parallel connection structure 1 between a first node and a second node; a first snubber device and a second snubber device having a clamp level that is the same as or higher than the output voltage of a power source section. One terminal of the first snubber device is connected through the first node to one end of the parallel connection structure, the opposite terminal of the first snubber device is connected through a third node to one terminal of the second snubber device, and the opposite terminal of the second snubber device is connected through the second node to the opposite end of the parallel connection structure. Electric power is fed back to the power source section through the second and third nodes.
摘要翻译：半导体器件包括：在第一节点和第二节点之间的并行连接结构1; 第一缓冲装置和第二缓冲装置，其具有与电源部分的输出电压相同或更高的钳位电平。第一缓冲装置的一个端子通过第一节点连接到并联连接结构的一端，第一缓冲装置的相对端通过第三节点连接到第二缓冲装置的一个端子，第二缓冲装置通过第二节点连接到并联连接结构的相对端。电力通过第二和第三节点反馈到电源部分。

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