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1. 发明授权

US5828117A Thin-film solar cell 失效
标题翻译：薄膜太阳能电池
公开(公告)号：US5828117A
公开(公告)日：1998-10-27
申请号：US859687
申请日：1997-05-21
申请人： Masataka Kondo , Katsuhiko Hayashi , Atsuo Ishikawa , Shinichiro Kurata , Hideo Yamagishi
发明人： Masataka Kondo , Katsuhiko Hayashi , Atsuo Ishikawa , Shinichiro Kurata , Hideo Yamagishi
IPC分类号： H01L31/0224 , H01L31/0392 , H01L31/052 , H01L31/075 , H01L31/18 , H01L31/105 , H01L31/117
CPC分类号： H01L31/1884 , H01L31/022466 , H01L31/0392 , H01L31/03925 , H01L31/056 , H01L31/075 , Y02E10/52 , Y02E10/548
摘要： The invention provides two kinds of structures for a thin-film solar cell that is improved in the adhesive strength and reflectance of a back surface electrode layer. According to the first structure, in a thin-film solar cell in which a transparent electrode layer, a thin-film semiconductor layer, and a back surface electrode layer are laid in stated order on an insulative transparent substrate, the back surface electrode layer consists of a first transparent conductive metal compound layer having a smaller refractive index than a semiconductor that constitutes the thin-film semiconductor layer, a second transparent conductive metal compound layer, and a metal layer. The second transparent conductive metal compound layer contains at least one of components of the first transparent conductive metal compound layer and a component of the metal layer. According to the second structure, in a thin-film solar cell in which a transparent electrode layer, a thin-film semiconductor layer, and a back surface electrode layer are laid in order on an insulative transparent substrate, the back surface electrode layer is a layered body consisting of a silver thin film, and an intermediate thin layer containing silver, oxygen, and a metal element constituting a transparent conductive metal oxide.
摘要翻译：本发明提供两种用于提高背面电极层的粘合强度和反射率的薄膜太阳能电池的结构。根据第一结构，在透明电极层，薄膜半导体层和背面电极层以绝缘性的透明基板依次配置的薄膜太阳能电池中，背面电极层由具有比构成薄膜半导体层的半导体的折射率小的第一透明导电金属化合物层，第二透明导电金属化合物层和金属层。第二透明导电金属化合物层包含第一透明导电金属化合物层和金属层的成分中的至少一种。根据第二结构，在绝缘性透明基板上依次层叠透明电极层，薄膜半导体层和背面电极层的薄膜太阳能电池中，背面电极层为由银薄膜构成的层状体，以及含有银，氧，构成透明导电性金属氧化物的金属元素的中间薄层。

2. 发明授权

US06265652B1 Integrated thin-film solar battery and method of manufacturing the same 失效
公开(公告)号：US06265652B1
公开(公告)日：2001-07-24
申请号：US09033933
申请日：1998-03-03
申请人： Shinichiro Kurata , Katsuhiko Hayashi , Atsuo Ishikawa , Masataka Kondo
发明人： Shinichiro Kurata , Katsuhiko Hayashi , Atsuo Ishikawa , Masataka Kondo
IPC分类号： H01L27142
CPC分类号： H01L31/022466 , H01L31/022483 , H01L31/022491 , H01L31/046 , H01L31/056 , Y02E10/52
摘要： An integrated thin-film solar battery having a plurality of unit elements connected in series includes a substrate, a plurality of spaced apart first electrode layers formed on the substrate; a plurality of semiconductor layers disposed on said plurality of first electrode layers in such a manner that each of the semiconductor layers is formed on two adjacent first electrodes and has a connection opening located on one of the two first electrodes, an electrically conductive layer formed on each of the semiconductor layers except on the region of the connection opening, and a second electrode layer disposed on each of the electrically conductive layers such that the second electrode layer is electrically connected to one of the two adjacent first electrode layers through the connection opening, to form a region interposed between the second electrode layer and the other first electrode layer as the unit element.

3. 发明授权

US06437231B1 Integrated thin-film solar battery and method of manufacturing the same 有权
公开(公告)号：US06437231B1
公开(公告)日：2002-08-20
申请号：US09863351
申请日：2001-05-24
申请人： Shinichiro Kurata , Katsuhiko Hayashi , Atsuo Ishikawa , Masataka Kondo
发明人： Shinichiro Kurata , Katsuhiko Hayashi , Atsuo Ishikawa , Masataka Kondo
IPC分类号： H01L27142
摘要： An integrated thin-film solar battery having a plurality of unit elements connected in series includes a substrate, a plurality of spaced apart first electrode layers formed on the substrate; a plurality of semiconductor layers disposed on said plurality of first electrode layers in such a manner that each of the semiconductor layers is formed on two adjacent first electrodes and has a connection opening located on one of the two first electrodes, an electrically conductive layer formed on each of the semiconductor layers except on the region of the connection opening, and a second electrode layer disposed on each of the electrically conductive layers such that the second electrode layer is electrically connected to one of the two adjacent first electrode layers through the connection opening, to form a region interposed between the second electrode layer and the other first electrode layer as the unit element.

4. 发明授权

US5422511A Image sensor utilizing photo diode, blocking diode and clamping diode 失效
标题翻译：图像传感器采用光电二极管，阻塞二极管和钳位二极管
公开(公告)号：US5422511A
公开(公告)日：1995-06-06
申请号：US973308
申请日：1992-11-09
申请人： Yoichi Hosokawa , Tadashi Obayashi , Shinichiro Kurata , Satoru Murakami , Hiromi Maeda , Takeharu Yamawaki
发明人： Yoichi Hosokawa , Tadashi Obayashi , Shinichiro Kurata , Satoru Murakami , Hiromi Maeda , Takeharu Yamawaki
IPC分类号： H01L27/12 , H01L27/146 , H04N1/028 , H04N1/19 , H01L27/14
CPC分类号： H04N3/1506 , H01L27/12 , H01L27/14643 , H04N3/1581
摘要： The invention seeks to reduce residual image in the vertical direction, which is the most significant drawback in the charge storage system, and further to permit increased speed of operation to be obtained.To this end, an image sensor of matrix drive type according to the invention comprises m by n diode pairs each including a photo- and a blocking diode PD and BD with the cathode electrodes thereof connected in series, the diode pairs constituting n blocks B.sub.1,B.sub.2 . . . , Bn each of m diode pairs. A clamp diode CD is connected to the juncture between the photo- and blocking diodes PD and BD in each diode pair to clamp the potential on the juncture and thus permit complete and quick charging of the capacitance of the photo-diode PD.
摘要翻译：本发明寻求减少垂直方向上的残留图像，这是电荷存储系统中最显着的缺点，并且还允许获得增加的操作速度。为此，根据本发明的矩阵驱动型图像传感器包括m×n个二极管对，每个二极管对包括光电隔离二极管PD和BD，其阴极电极串联连接，二极管对构成n个块B1， B2。。。，Bn各m个二极管对。钳位二极管CD连接到每个二极管对中的光阻二极管PD和BD之间的接合处，以钳位接合点上的电位，从而允许光电二极管PD的电容的完全和快速充电。

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