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1. 发明申请

US20120104535A1 PHOTODETECTOR 审中-公开
标题翻译：照相机
公开(公告)号：US20120104535A1
公开(公告)日：2012-05-03
申请号：US13282760
申请日：2011-10-27
申请人： Shinichiro KAWAKAMI , Yasuo MATSUMIYA
发明人： Shinichiro KAWAKAMI , Yasuo MATSUMIYA
IPC分类号： H01L31/0352
CPC分类号： H01L31/108 , B82Y20/00 , H01L27/1446 , H01L27/14647 , H01L27/14649 , H01L27/14694 , H01L31/035236 , H01L31/109
摘要： A photodetector includes a substrate, a first electrode layer, a first light absorbing layer, a second electrode layer, a second light absorbing layer, and a third electrode layer that are laminated on the substrate, a first electrode wire that intercouples the first electrode layer and the second electrode layer, a second electrode wire that intercouples the second electrode layer and the third electrode layer, a first diode formed at a place where the second electrode layer and the first electrode wire are mutually brought into contact, and a second diode formed at a place where the second electrode layer and the second electrode wire are mutually brought into contact.
摘要翻译：光电检测器包括层叠在基板上的基板，第一电极层，第一光吸收层，第二电极层，第二光吸收层和第三电极层，将第一电极层和第二电极层，与第二电极层和第三电极层相互结合的第二电极线，形成在第二电极层和第一电极线相互接触的位置的第一二极管，以及形成在第二电极层和第二电极线相互接触的地方。

2. 发明授权

US08389206B2 High normality solution for removing freeze material in lithographic applications 有权
标题翻译：用于去除光刻应用中的冷冻材料的高正常解决方案
公开(公告)号：US08389206B2
公开(公告)日：2013-03-05
申请号：US12564738
申请日：2009-09-22
申请人： Shannon W. Dunn , Shinichiro Kawakami , Dave Hetzer
发明人： Shannon W. Dunn , Shinichiro Kawakami , Dave Hetzer
IPC分类号： G03F7/26
CPC分类号： G03F7/405 , G03F7/0035 , H01L21/0273
摘要： A method for patterning a substrate is described. The method comprises forming a layer of radiation-sensitive material on the substrate, preparing a pattern in the layer of radiation-sensitive material, and applying a chemical freeze layer over the layer of radiation-sensitive material to form a frozen layer of radiation-sensitive material. Thereafter, the method comprises stripping the chemical freeze layer using a high normality strip solution to preserve the pattern in the frozen layer of radiation-sensitive material, wherein the high normality strip solution contains an active solute having a normality (N) greater than 0.26.
摘要翻译：描述了用于图案化衬底的方法。该方法包括在衬底上形成辐射敏感材料层，在辐射敏感材料层中制备图案，并在辐射敏感材料层上施加化学冻结层以形成辐射敏感材料的冷冻层材料。此后，该方法包括使用高正常条带溶液剥离化学冻结层以保留辐射敏感材料的冷冻层中的图案，其中高正常条带溶液含有正态（N）大于0.26的活性溶质。

3. 发明申请

US20130309615A1 PROCESS SEQUENCE FOR REDUCING PATTERN ROUGHNESS AND DEFORMITY 有权
标题翻译：减少模式粗糙度和变形的过程序列
公开(公告)号：US20130309615A1
公开(公告)日：2013-11-21
申请号：US13572005
申请日：2012-08-10
申请人： Shinichiro Kawakami
发明人： Shinichiro Kawakami
IPC分类号： G03F7/40
CPC分类号： G03F7/405 , G03F7/40
摘要： A method for patterning a substrate with reduced defectivity is described. Once a pattern is formed in a layer of radiation-sensitive material using lithographic techniques, the pattern formed on the substrate is post-treated. The post-treating of the pattern in the layer of radiation-sensitive material is performed to reduce a roughness of the pattern. The post-treating includes performing a treatment process on the pattern to alter a solubility of an exposed surface of the pattern, wherein the treatment process involves performing a first chemical treatment of the pattern using a liquid-phase chemical solution containing a first surfactant, or exposing said pattern to second EM radiation different than said first EM radiation. Following the treatment process, the post-treating includes hard baking the pattern, and performing a second chemical treatment of the pattern using a vapor-phase chemical solution to reduce the roughness.
摘要翻译：描述了具有降低的缺陷率来图案化衬底的方法。一旦使用光刻技术在辐射敏感材料层中形成图案，则在基底上形成的图案被后处理。执行辐射敏感材料层中的图案的后处理以减小图案的粗糙度。后处理包括对图案进行处理处理以改变图案的暴露表面的溶解度，其中处理过程涉及使用含有第一表面活性剂的液相化学溶液进行图案的第一化学处理，或将所述图案暴露于与所述第一EM辐射不同的第二EM辐射。在处理过程之后，后处理包括硬烘烤图案，并且使用气相化学溶液进行图案的第二化学处理以降低粗糙度。

4. 发明授权

US09097977B2 Process sequence for reducing pattern roughness and deformity 有权
标题翻译：减少图案粗糙度和畸形的工艺顺序
公开(公告)号：US09097977B2
公开(公告)日：2015-08-04
申请号：US13572005
申请日：2012-08-10
申请人： Shinichiro Kawakami
发明人： Shinichiro Kawakami
IPC分类号： G03F7/20 , G03F7/40
CPC分类号： G03F7/405 , G03F7/40
摘要： A method for patterning a substrate with reduced defectivity is described. Once a pattern is formed in a layer of radiation-sensitive material using lithographic techniques, the pattern formed on the substrate is post-treated. The post-treating of the pattern in the layer of radiation-sensitive material is performed to reduce a roughness of the pattern. The post-treating includes performing a treatment process on the pattern to alter a solubility of an exposed surface of the pattern, wherein the treatment process involves performing a first chemical treatment of the pattern using a liquid-phase chemical solution containing a first surfactant, or exposing said pattern to second EM radiation different than said first EM radiation. Following the treatment process, the post-treating includes hard baking the pattern, and performing a second chemical treatment of the pattern using a vapor-phase chemical solution to reduce the roughness.
摘要翻译：描述了具有降低的缺陷率来图案化衬底的方法。一旦使用光刻技术在辐射敏感材料层中形成图案，则在基底上形成的图案被后处理。执行辐射敏感材料层中的图案的后处理以减小图案的粗糙度。后处理包括对图案进行处理处理以改变图案的暴露表面的溶解度，其中处理过程涉及使用含有第一表面活性剂的液相化学溶液进行图案的第一化学处理，或将所述图案暴露于与所述第一EM辐射不同的第二EM辐射。在处理过程之后，后处理包括硬烘烤图案，并且使用气相化学溶液进行图案的第二化学处理以降低粗糙度。

5. 发明申请

US20130040246A1 MULTIPLE CHEMICAL TREATMENT PROCESS FOR REDUCING PATTERN DEFECT 审中-公开
标题翻译：用于减少图案缺陷的多种化学处理方法
公开(公告)号：US20130040246A1
公开(公告)日：2013-02-14
申请号：US13206441
申请日：2011-08-09
申请人： Shinichiro KAWAKAMI
发明人： Shinichiro KAWAKAMI
IPC分类号： G03F7/40 , B05C13/00 , B05C9/08
CPC分类号： G03F7/40 , G03F7/3021 , H01L21/6715
摘要： A method and system for patterning a substrate with reduced defectivity is described. Once a pattern is formed in a layer of radiation-sensitive material using lithographic techniques, the substrate is rinsed to remove residual developing solution and/or other material. Thereafter, a first chemical treatment is performed using a first chemical solution, and a second chemical treatment is performed using a second chemical solution, wherein the second chemical solution has a different chemical composition than the first chemical solution. In one embodiment, the first chemical solution is selected to reduce pattern collapse, and the second chemical solution is selected to reduce pattern deformity, such as line edge roughness (LER) and/or line width roughness (LWR).
摘要翻译：描述了一种用于使缺陷度降低的衬底图案化的方法和系统。一旦使用光刻技术在辐射敏感材料层中形成图案，则冲洗基底以除去残余的显影溶液和/或其它材料。此后，使用第一化学溶液进行第一化学处理，并且使用第二化学溶液进行第二化学处理，其中第二化学溶液具有与第一化学溶液不同的化学组成。在一个实施方案中，选择第一化学溶液以减少图案塌陷，并且选择第二化学溶液以减少图案变形，例如线边缘粗糙度（LER）和/或线宽粗糙度（LWR）。

6. 发明申请

US20110070545A1 High normality solution for removing freeze material in lithographic applications 有权
标题翻译：用于去除光刻应用中的冷冻材料的高正常解决方案
公开(公告)号：US20110070545A1
公开(公告)日：2011-03-24
申请号：US12564738
申请日：2009-09-22
申请人： Shannon W. DUNN , Shinichiro KAWAKAMI , Dave HETZER
发明人： Shannon W. DUNN , Shinichiro KAWAKAMI , Dave HETZER
IPC分类号： G03F7/20
CPC分类号： G03F7/405 , G03F7/0035 , H01L21/0273
摘要： A method for patterning a substrate is described. The method comprises forming a layer of radiation-sensitive material on the substrate, preparing a pattern in the layer of radiation-sensitive material, and applying a chemical freeze layer over the layer of radiation-sensitive material to form a frozen layer of radiation-sensitive material. Thereafter, the method comprises stripping the chemical freeze layer using a high normality strip solution to preserve the pattern in the frozen layer of radiation-sensitive material, wherein the high normality strip solution contains an active solute having a normality (N) greater than 0.26.
摘要翻译：描述了用于图案化衬底的方法。该方法包括在衬底上形成辐射敏感材料层，在辐射敏感材料层中制备图案，并在辐射敏感材料层上施加化学冻结层以形成辐射敏感材料的冷冻层材料。此后，该方法包括使用高正常条带溶液剥离化学冻结层以保留辐射敏感材料的冷冻层中的图案，其中高正常条带溶液含有正态（N）大于0.26的活性溶质。

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