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1. 发明申请

US20100022097A1 VAPORIZER, SEMICONDUCTOR PRODUCTION APPARATUS AND PROCESS OF SEMICONDUCTOR PRODUCTION 审中-公开
标题翻译：蒸发器，半导体生产设备和半导体生产工艺
公开(公告)号：US20100022097A1
公开(公告)日：2010-01-28
申请号：US12278531
申请日：2006-02-27
申请人： Hisayoshi Yamoto , Yuji Honda , Shinichi Koshimae
发明人： Hisayoshi Yamoto , Yuji Honda , Shinichi Koshimae
IPC分类号： H01L21/465
CPC分类号： C23C16/45525 , C23C16/4481 , C23C16/45544 , C23C16/45551 , C23C16/545
摘要： A vaporizer, a semiconductor production apparatus and process capable of improving the efficiency in the use of a raw material gas noticeably, enabling uniform deposition according to the raw material gas used, diminishing maintenance frequency to improve productivity. At the time of ALD operation, carrier gas continues to be supplied to a reaction chamber 402, while supplying a material solution of predetermined quantity according to a film thickness of one atomic or molecular layer determined by a micro-metering pump 54, intermittently to an evaporation mechanism 20. Thus, a gas shower type heat CVD apparatus 1 enables a thin film of a desired thickness made of one atomic or molecular layer to be formed on a substrate 420 one by one, while avoiding the raw material gas being thrown away by the opening or closing operation of the reaction-chamber side valve 404 and the vent side valve 407. Consequently, the efficiency in the use of the raw material gas can be improved remarkably, according to the quantity of the raw material gas that is not thrown away in the process of forming a thin film of one atomic or molecular layer one by one.
摘要翻译：能够显着提高原料气体的使用效率的蒸发器，半导体制造装置和制造方法，能够根据所使用的原料气体均匀地沉积，减少维护频率，提高生产率。在ALD操作时，继续向反应室402供给载气，同时按照由微量计量泵54确定的一个原子或分子层的膜厚度间歇地供给预定量的材料溶液至蒸发机构20.因此，气体淋浴型热CVD装置1能够将由一个原子或分子层构成的期望厚度的薄膜逐一形成在基板420上，同时避免原料气体被扔掉的原料气体反应室侧阀404和排气侧阀407的打开或关闭操作。因此，可以根据未投入的原料气体的量，显着提高原料气体的使用效率在逐个形成一个原子或分子层的薄膜的过程中。

2. 发明申请

US20060070575A1 Solution-vaporization type CVD apparatus 审中-公开
标题翻译：溶液蒸发型CVD装置
公开(公告)号：US20060070575A1
公开(公告)日：2006-04-06
申请号：US11079723
申请日：2005-03-14
申请人： Hisayoshi Yamoto , Shinichi Koshimae
发明人： Hisayoshi Yamoto , Shinichi Koshimae
IPC分类号： C23C16/00
CPC分类号： C23C16/4401 , C23C16/4412 , C23C16/4486 , C23C16/52
摘要： The vaporizer of the solution-vaporization type CVD apparatus comprises: the orifice tube dispersing at least one kind of a raw-material solution in a carrier gas in a fine particulate or misty form; at least one path for at least one kind of the raw-material solution, the at least one path supplying at least one kind of the raw-material solution to the orifice tube separately from one another; the path for the carrier gas supplying the carrier gas to the orifice tube separately from the raw-material solution; the vaporizing tube vaporizing at least one kind of the raw-material solution dispersed by the orifice tube; and the orifice connected to the vaporizing tube and the orifice tube, the orifice introducing at least one kind of the raw-material solution dispersed by the orifice tube into the vaporizing member.
摘要翻译：溶液蒸发型CVD装置的蒸发器包括：孔管以细颗粒或雾状形式将至少一种原料溶液分散在载气中; 用于至少一种原料溶液的至少一个路径，所述至少一个路径将至少一种原料溶液彼此分开地供应到孔管; 用于将载气与原料溶液分开地供应到孔管的载气的路径; 蒸发管使由孔管分散的至少一种原料溶液蒸发; 并且所述孔连接到所述蒸发管和所述孔口管，所述孔将由所述孔管分散的至少一种所述原料溶液引入所述蒸发构件。

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