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    • 1. 发明授权
    • Organic field-effect transistor, production method and intermediate structure therefor, and organic field-effect device
    • 有机场效应晶体管,其制作方法及其中间结构,以及有机场效应器件
    • US08203138B2
    • 2012-06-19
    • US12458420
    • 2009-07-10
    • Junichi TakeyaShimpei OnoShiro Seki
    • Junichi TakeyaShimpei OnoShiro Seki
    • H01L35/24
    • H01L51/052
    • An organic field-effect transistor normally includes: a source electrode and a drain electrode; an organic semiconductor layer in contact with the source electrode and the drain electrode; a gate insulating layer adjacent to the organic semiconductor layer; and a gate electrode in contact with the gate insulating layer. The gate insulating layer according to the present invention is in a liquid state, constituted with a material containing no glue or thickener, a sole or main component of which is an ionic liquid. Thus the capacitance of the ionic liquid corresponding to a gate voltage modulation frequency of 10 Hz is reduced to 1/10 at a frequency of 10 kHz of higher. As a result, an organic field-effect transistor capable of operating at low voltage and assuring ample current gain and high-speed response (the capacitance of the ionic liquid corresponding to a gate voltage modulation frequency of 10 Hz is reduced to 1/10 at a frequency of 10 kHz of higher) is provided.
    • 有机场效应晶体管通常包括:源电极和漏电极; 与源电极和漏电极接触的有机半导体层; 与所述有机半导体层相邻的栅极绝缘层; 以及与栅极绝缘层接触的栅电极。 根据本发明的栅极绝缘层处于液态,由不含胶或增稠剂的材料构成,其底部或主要成分为离子液体。 因此,对应于10Hz的栅极电压调制频率的离子液体的电容在10kHz的频率下降低到1/10。 结果,能够以低电压工作并确保充足的电流增益和高速响应的有机场效应晶体管(对应于10Hz的栅极电压调制频率的离子液体的电容降低到1/10) 提供10kHz以上的频率)。
    • 2. 发明申请
    • Organic field-effect transistor, production method and intermediate structure therefor, and organic field-effect device
    • 有机场效应晶体管,其制作方法及其中间结构,以及有机场效应器件
    • US20100051913A1
    • 2010-03-04
    • US12458420
    • 2009-07-10
    • Junichi TakeyaShimpei OnoShiro Seki
    • Junichi TakeyaShimpei OnoShiro Seki
    • H01L51/10H01L51/40
    • H01L51/052
    • An organic field-effect transistor normally includes: a source electrode and a drain electrode; an organic semiconductor layer in contact with the source electrode and the drain electrode; a gate insulating layer adjacent to the organic semiconductor layer; and a gate electrode in contact with the gate insulating layer. The gate insulating layer according to the present invention is in a liquid state, constituted with a material containing no glue or thickener, a sole or main component of which is an ionic liquid. Thus the capacitance of the ionic liquid corresponding to a gate voltage modulation frequency of 10 Hz is reduced to 1/10 at a frequency of 10 kHz of higher. As a result, an organic field-effect transistor capable of operating at low voltage and assuring ample current gain and high-speed response (the capacitance of the ionic liquid corresponding to a gate voltage modulation frequency of 10 Hz is reduced to 1/10 at a frequency of 10 kHz of higher) is provided.
    • 有机场效应晶体管通常包括:源电极和漏电极; 与源电极和漏电极接触的有机半导体层; 与所述有机半导体层相邻的栅极绝缘层; 以及与栅极绝缘层接触的栅电极。 根据本发明的栅极绝缘层处于液态,由不含胶或增稠剂的材料构成,其底部或主要成分为离子液体。 因此,对应于10Hz的栅极电压调制频率的离子液体的电容在10kHz的频率下降低到1/10。 结果,能够以低电压工作并确保充足的电流增益和高速响应的有机场效应晶体管(对应于10Hz的栅极电压调制频率的离子液体的电容降低到1/10) 提供10kHz以上的频率)。