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1. 发明授权

US08643171B1 Power semiconductor device 有权
标题翻译：功率半导体器件
公开(公告)号：US08643171B1
公开(公告)日：2014-02-04
申请号：US13993348
申请日：2012-07-31
申请人： Shigeyuki Nakazato , Yoichi Goto , Kiyofumi Kitai , Toru Kimura
发明人： Shigeyuki Nakazato , Yoichi Goto , Kiyofumi Kitai , Toru Kimura
IPC分类号： H01L23/10 , H01L23/043
CPC分类号： H01L23/34 , H01L21/4882 , H01L23/3121 , H01L23/367 , H01L2924/0002 , H01L2924/00
摘要： A power semiconductor device includes: a mold unit that includes a power semiconductor element, a base plate, and a mold unit, the power semiconductor element being mounted on one surface of the base plate, a convex portion being formed on an other surface of the base plate, the convex portion including a plurality of grooves, the mold unit having a mold resin with which the power semiconductor element is sealed in such a manner as to expose the convex portion; a plurality of radiation fins inserted into the grooves, respectively, and fixedly attached to the base plate by swaging; and a metal plate that includes a opening into which the convex portion is inserted, the metal plate being arranged between the mold unit and the radiation fins with the convex portion inserted into the opening, wherein the metal plate includes a protrusion that protrudes from an edge of the opening and that digs into a side surface of the convex portion when the convex portion is inserted into the opening.
摘要翻译：功率半导体器件包括：模具单元，其包括功率半导体元件，基板和模具单元，所述功率半导体元件安装在所述基板的一个表面上，凸部形成在所述基板的另一表面上底板，所述凸部包括多个凹槽，所述模具单元具有模制树脂，所述功率半导体元件以这样的方式被密封以暴露所述凸部; 分别插入槽中的多个辐射翅片，并通过型锻固定地固定到基板上; 以及金属板，其包括插入所述凸部的开口，所述金属板布置在所述模具单元和所述散热片之间，所述凸部插入到所述开口中，其中所述金属板包括突出部，并且当所述凸部插入到所述开口中时，所述凹部挖入所述凸部的侧表面。

2. 发明申请

US20140035122A1 POWER SEMICONDUCTOR DEVICE 有权
标题翻译：功率半导体器件
公开(公告)号：US20140035122A1
公开(公告)日：2014-02-06
申请号：US13993348
申请日：2012-07-31
申请人： Shigeyuki Nakazato , Yoichi Goto , Kiyofumi Kitai , Toru Kimura
发明人： Shigeyuki Nakazato , Yoichi Goto , Kiyofumi Kitai , Toru Kimura
IPC分类号： H01L23/34
CPC分类号： H01L23/34 , H01L21/4882 , H01L23/3121 , H01L23/367 , H01L2924/0002 , H01L2924/00
摘要： A power semiconductor device includes: a mold unit that includes a power semiconductor element, a base plate, and a mold unit, the power semiconductor element being mounted on one surface of the base plate, a convex portion being formed on an other surface of the base plate, the convex portion including a plurality of grooves, the mold unit having a mold resin with which the power semiconductor element is sealed in such a manner as to expose the convex portion; a plurality of radiation fins inserted into the grooves, respectively, and fixedly attached to the base plate by swaging; and a metal plate that includes a opening into which the convex portion is inserted, the metal plate being arranged between the mold unit and the radiation fins with the convex portion inserted into the opening, wherein the metal plate includes a protrusion that protrudes from an edge of the opening and that digs into a side surface of the convex portion when the convex portion is inserted into the opening.
摘要翻译：功率半导体器件包括：模具单元，其包括功率半导体元件，基板和模具单元，所述功率半导体元件安装在所述基板的一个表面上，凸部形成在所述基板的另一表面上底板，所述凸部包括多个凹槽，所述模具单元具有模制树脂，所述功率半导体元件以这样的方式被密封以暴露所述凸部; 分别插入槽中的多个辐射翅片，并通过型锻固定地固定到基板上; 以及金属板，其包括插入所述凸部的开口，所述金属板布置在所述模具单元和所述散热片之间，所述凸部插入到所述开口中，其中所述金属板包括突出部，并且当所述凸部插入到所述开口中时，所述凹部挖入所述凸部的侧表面。

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