专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07871590B2 Mass of silicon solidified from molten state and process for producing the same 有权
标题翻译：从熔融状态固化的硅质量及其制造方法
公开(公告)号：US07871590B2
公开(公告)日：2011-01-18
申请号：US11597222
申请日：2005-05-23
申请人： Satoru Wakamatsu , Junichirou Nakashima , Shigeki Sugimura
发明人： Satoru Wakamatsu , Junichirou Nakashima , Shigeki Sugimura
IPC分类号： C01B33/02 , B29B9/00 , B22F9/00 , C30B29/06
CPC分类号： C30B29/06 , C30B11/00 , C30B11/04 , Y10T428/12479 , Y10T428/2982
摘要： A solidified mass for a high-purity multicrystal silicon material that is preferably applicable to producing crystal type silicon ingots for photo voltaics, and a process for producing the solidified mass are provided. The mass of silicon solidified from molten state is a solidified mass produced by dropping molten silicon into a receiving vessel and allowing the vessel to receive the molten silicon, said solidified mass containing bubbles and having (i) an apparent density of not less than 1.5 g/cm3 and not more than 2.2 g/cm3 and (ii) a compressive strength of not less than 5 MPa and not more than 50 MPa. The process for producing a mass of silicon solidified from molten state includes the steps of dropping molten silicon into a receiving vessel and allowing the vessel to receive the molten silicon, wherein the surface temperature of the vessel for receiving the molten silicon is not lower than 0° C. and not higher than 1000° C., and the receiving vessel is allowed to receive the molten silicon at a rate of 1×10−3 to 5×10−1 g/sec·cm2.
摘要翻译：提供优选适用于制造光伏型晶体硅锭的高纯度多晶硅材料的固化物质，以及固化物质的制造方法。从熔融状态固化的硅质量是通过将熔融硅滴入接收容器并允许容器接收熔融硅而产生的固化物质，所述固化物质含有气泡，并且（i）表观密度不小于1.5g cm 3，不大于2.2g / cm 3，（ii）压缩强度为5MPa以上且50MPa以下。从熔融状态固化的硅的制造方法包括将熔融硅滴入接收容器中并允许容器接收熔融硅的步骤，其中用于接收熔融硅的容器的表面温度不低于0 ℃并且不高于1000℃，并且允许接收容器以1×10 -3至5×10 -1 g / sec·cm 2的速率接收熔融硅。

2. 发明申请

US20080041309A1 Silicon Manufacturing Apparatus 审中-公开
标题翻译：硅制造设备
公开(公告)号：US20080041309A1
公开(公告)日：2008-02-21
申请号：US11659755
申请日：2005-08-10
申请人： Junichirou Nakashima , Satoru Wakamatsu , Shigeki Sugimura
发明人： Junichirou Nakashima , Satoru Wakamatsu , Shigeki Sugimura
IPC分类号： C01B33/03
CPC分类号： C01B33/03 , C01B33/027 , C30B29/06 , C30B33/00
摘要： It is an object to provide a silicon manufacturing apparatus that suppresses a silicon deposition to the bottom end portion of the reaction vessel and to a section other than the inside face of the reaction vessel except for the bottom end portion, thereby enabling a stable operation for a long time, for a silicon manufacturing apparatus that introduces a reaction gas to the inside wall of the heated reaction vessel to deposit silicon and that withdraws the deposited silicon from an opening at the bottom end portion of the reaction vessel. A first gas supply port 31 that is formed by a circular slit and that supplies a sealing gas and/or an etching gas to the bottom end portion is formed on the peripheral side around the bottom end portion of the reaction vessel. In addition, a second gas supply port 33 is formed at the position separate from the first gas supply port 31, and a sealing gas and/or an etching gas are supplied from the second gas supply port 33 to a wall face of the member forming the first gas supply port 31 at the outside periphery of the first gas supply port 31.
摘要翻译：本发明的目的是提供一种硅制造装置，其抑制反应容器的底端部的硅沉积以及除了底端部以外的除了反应容器的内表面以外的部分，从而能够稳定地进行长时间地，用于将反应气体引入加热的反应容器的内壁以沉积硅并从反应容器的底端部分的开口排出沉积的硅的硅制造装置。在反应容器的底端部周围的周边形成有由圆形狭缝形成并且向底端部供给密封气体和/或蚀刻气体的第一气体供给口31。另外，在与第一气体供给口31分离的位置上形成第二气体供给口33，将密封气体和/或蚀刻气体从第二气体供给口33供给到成形体的壁面在第一气体供给口31的外周的第一气体供给口31。

3. 发明申请

US20090311450A1 Tubular container made of carbon 审中-公开
标题翻译：由碳制成的管状容器
公开(公告)号：US20090311450A1
公开(公告)日：2009-12-17
申请号：US11630663
申请日：2005-06-23
申请人： Junichirou Nakashima , Manabu Sakita , Hiroyuki Oda , Shigeki Sugimura
发明人： Junichirou Nakashima , Manabu Sakita , Hiroyuki Oda , Shigeki Sugimura
IPC分类号： B32B1/08
CPC分类号： C30B11/002 , B22D41/12 , B22D41/502 , C04B35/52 , C04B2235/94 , C04B2235/963 , F27D1/04 , Y10T428/13
摘要： It is an object of the present invention to prevent leakage of a raw material gas or molten silicon in a carbon columnar container which is constructed by connecting plural carbon cylindrical members to each other by a screw portion provided along the periphery of an end of each of the cylindrical members, by sealing a gap present at the connection portion through a high-reliability method that causes no cracking or the like. The carbon columnar container of the invention is a carbon columnar container constructed so as to form a multistage structure by connecting plural carbon cylindrical members to each other by a screw portion provided along the periphery of an end of each of the cylindrical members, wherein each of the cylindrical members connected to each other has such a ring-shaped plane extending from the inner peripheral wall in the diameter direction as to form a ring-shaped butt area on the inner peripheral wall side when the cylindrical members are connected, and the sum of surface roughness (Ra) of the ring-shaped planes to form the butt area is in the range of 1 to 100 μm.
摘要翻译：本发明的目的是防止原料气体或熔融硅在碳柱容器中的泄漏，该碳柱容器是通过沿着每个通过利用不产生龟裂等的高可靠性方法密封连接部分处的间隙来形成圆柱形部件。本发明的碳柱状容器是碳柱状容器，其构造为通过沿着每个圆柱形构件的端部的周边设置的螺纹部分将多个碳素筒构件彼此连接而形成多级结构，其中，彼此连接的圆筒形构件具有这样一个环形平面，该圆形面从直径方向的内周壁延伸，以便在圆柱形构件连接时在内周壁侧形成环形对接区域，并且形成对接面的环形面的表面粗糙度（Ra）在1〜100μm的范围内。

4. 发明申请

US20100290960A1 APPARATUS FOR PRODUCING SILICON 审中-公开
标题翻译：生产硅胶的设备
公开(公告)号：US20100290960A1
公开(公告)日：2010-11-18
申请号：US12810254
申请日：2008-12-26
申请人： Hiroo Noumi , Nobuaki Yoshimatsu , Shigeki Sugimura
发明人： Hiroo Noumi , Nobuaki Yoshimatsu , Shigeki Sugimura
IPC分类号： B01J19/00
CPC分类号： C01B33/02 , B01J19/02 , B01J19/2415 , B01J2219/00148 , B01J2219/0236 , B01J2219/0272 , C01B33/03
摘要： To provide an apparatus for producing silicon capable of recovering silicon sufficiently in a recovery container even if the silicon deposited in a reaction container solidifies in the shape of an anthill.[Means for Solution] The apparatus for producing silicon has means for moving a recovery container 14 in a reaction container body 2. The moving means includes a support shaft 18 for supporting a bottom wall 14b of the recovery container 14 and a drive unit 17 for rotating the support shaft 18, which are provided for the recovery container 14. The support shaft 18 is deviated from the position of the center portion of the opening 7a on the lower end side of the reaction tube 7 so that the support shaft 18 suitably rotates at the time when the silicon is recovered in the recovery container 14 thereby varying the position on where the anthill is formed.
摘要翻译：即使沉积在反应容器中的硅固化成一个蚁丘的形状，提供一种能够在回收容器中充分回收硅的硅的装置。 [解决方案]用于制造硅的装置具有用于使反应容器主体2中的回收容器14移动的装置。移动装置包括用于支撑回收容器14的底壁14b的支撑轴18和用于旋转用于回收容器14的支撑轴18.支撑轴18从反应管7的下端侧上的开口7a的中心部分的位置偏离，使得支撑轴18适当地旋转在硅在回收容器14中回收，从而改变在形成该止点的位置。

5. 发明申请

US20080038177A1 Cooled Lump From Molten Silicon And Process For Producing The Same 有权
标题翻译：来自熔融硅的冷却块及其制造方法
公开(公告)号：US20080038177A1
公开(公告)日：2008-02-14
申请号：US11597222
申请日：2005-05-23
申请人： Satoru Wakamatsu , Junichirou Nakashima , Shigeki Sugimura
发明人： Satoru Wakamatsu , Junichirou Nakashima , Shigeki Sugimura
IPC分类号： C01B33/02 , C30B29/06
CPC分类号： C30B29/06 , C30B11/00 , C30B11/04 , Y10T428/12479 , Y10T428/2982
摘要： A solidified mass for a high-purity multicrystal silicon material that is preferably applicable to producing crystal type silicon ingots for photo voltaics, and a process for producing the solidified mass are provided. The mass of silicon solidified from molten state is a solidified mass produced by dropping molten silicon into a receiving vessel and allowing the vessel to receive the molten silicon, said solidified mass containing bubbles and having (i) an apparent density of not less than 1.5 g/cm3 and not more than 2.2 g/cm3 and (ii) a compressive strength of not less than 5 MPa and not more than 50 MPa. The process for producing a mass of silicon solidified from molten state includes the steps of dropping molten silicon into a receiving vessel and allowing the vessel to receive the molten silicon, wherein the surface temperature of the vessel for receiving the molten silicon is not lower than 0° C. and not higher than 1000° C., and the receiving vessel is allowed to receive the molten silicon at a rate of 1×10−3 to 5×10−1 g/sec·cm2.
摘要翻译：提供优选适用于制造光伏型晶体硅锭的高纯度多晶硅材料的固化物质，以及固化物质的制造方法。从熔融状态固化的硅质量是通过将熔融硅滴入接收容器并允许容器接收熔融硅而产生的固化物质，所述固化物质含有气泡，并且（i）表观密度不小于1.5g / cm 3以上且2.2g / cm 3以下，（ii）抗压强度为5MPa以上且50MPa以下。从熔融状态固化的硅的制造方法包括将熔融硅滴入接收容器中并允许容器接收熔融硅的步骤，其中用于接收熔融硅的容器的表面温度不低于0 并且不高于1000℃，并且允许接收容器以1×10 -3至5×10 -1 / g的速率接收熔融硅， sec.cm <2> 。

6. 发明申请

US20060016292A1 Process for producing silicon 审中-公开
标题翻译：硅生产工艺
公开(公告)号：US20060016292A1
公开(公告)日：2006-01-26
申请号：US11187077
申请日：2005-07-22
申请人： Satoru Wakamatsu , Shigeki Sugimura
发明人： Satoru Wakamatsu , Shigeki Sugimura
IPC分类号： C22B9/00
CPC分类号： C22B61/00 , C22B9/00 , C30B11/002 , C30B29/06
摘要： There is provided a production process of silicon that can reutilize a receiving vessel without breaking of the receiving vessel and does not cause inclusion of impurities in silicon from the receiving vessel in contact with molten silicon. The production process of silicon comprises the steps of: depositing silicon in a solid state or molten state by contacting gas mixture of hydrogen and silanes to the surface having the temperature range of 600 to 1700° C.; melting a part or the whole of the deposited silicon, dropping the melt from a deposition surface, and receiving the dropped molten silicon in a receiving vessel, wherein said receiving vessel comprises a silicon bottom plate member(s) and a plurality of silicon side plate members that are installed upright direction from the peripheral part of the bottom plate member.
摘要翻译：提供了硅的生产方法，其可以在不破坏接收容器的情况下再利用接收容器，并且不会从与熔融硅接触的接收容器中引入硅中的杂质。硅的生产方法包括以下步骤：通过将氢气和硅烷的气体混合物接触到温度范围为600至1700℃的表面，将硅沉积为固态或熔融状态; 熔化沉积的硅的一部分或全部，从沉积表面滴下熔体，以及在接收容器中接收掉掉的熔融硅，其中所述接收容器包括硅底板构件和多个硅侧板从底板构件的周边部分竖直地安装的构件。

7. 发明授权

US07553467B2 Tubular reaction vessel and process for producing silicon therewith 有权
标题翻译：管状反应容器及其制造方法
公开(公告)号：US07553467B2
公开(公告)日：2009-06-30
申请号：US10567943
申请日：2004-08-11
申请人： Satoru Wakamatsu , Shigeki Sugimura , Yasuo Nakamura , Kenichi Tsujio
发明人： Satoru Wakamatsu , Shigeki Sugimura , Yasuo Nakamura , Kenichi Tsujio
IPC分类号： C01B33/03 , C23C16/24 , C23C16/46
CPC分类号： B01F3/02 , B01F5/0618 , B01F5/0646 , B01F5/0647 , B01F5/065 , B01F5/0655 , B01F2005/0625 , B01F2005/0636 , B01F2005/0637 , B01J19/0053 , B01J19/2415 , B01J19/2425 , B01J19/244 , B01J2219/00015 , C01B33/02 , C01B33/03 , Y10T117/10 , Y10T117/1028
摘要： There is provided a reaction vessel whereby silicon produced can be smoothly recovered dropwise without excessive thermal load on constitutional parts of the reaction vessel, a silicon deposition feedstock gas can be reacted efficiently even when the reaction vessel is scaled up to industrial large-scale equipment, generation of silicon fine powder and silane oligomers can be suppressed, and industrial silicon production can be performed over extended periods. The tubular reaction vessel comprises a longitudinally-extending wall with a space thereinside, wherein a silicon deposition feedstock gas inflow opening and a deposited silicon discharge opening are provided at an upper portion and a lower end portion respectively, and a flow resistance-increasing region is created on a wall surface of the tubular reaction vessel that is contacted with a feedstock gas. The flow resistance-increasing region is at least one of protrudent, concave and sloped regions.
摘要翻译：提供了一种反应容器，由此可以在反应容器的结构部件上平滑地顺利地回收产生的硅烷，而不会有过多的热负荷，即使反应容器放大到工业大型设备，也可以有效地反应硅沉积原料气体，可以抑制硅微粉末和硅烷低聚物的产生，并且可以在长时间内进行工业硅生产。管状反应容器包括在其上具有空间的纵向延伸的壁，其中硅沉积原料气体流入开口和淀积的硅排放口分别设置在上部和下端部，流阻增加区域在与原料气体接触的管状反应容器的壁表面上产生。流动阻力增加区域是突出，凹入和倾斜区域中的至少一个。

8. 发明申请

US20060219161A1 Tubular reaction vessel and process for producing silicon therewith 有权
公开(公告)号：US20060219161A1
公开(公告)日：2006-10-05
申请号：US10567943
申请日：2004-08-11
申请人： Satoru Wakamatsu , Shigeki Sugimura , Yasuo Nakamura , Kenichi Tsujio
发明人： Satoru Wakamatsu , Shigeki Sugimura , Yasuo Nakamura , Kenichi Tsujio
IPC分类号： C30B11/10 , C30B11/00
CPC分类号： B01F3/02 , B01F5/0618 , B01F5/0646 , B01F5/0647 , B01F5/065 , B01F5/0655 , B01F2005/0625 , B01F2005/0636 , B01F2005/0637 , B01J19/0053 , B01J19/2415 , B01J19/2425 , B01J19/244 , B01J2219/00015 , C01B33/02 , C01B33/03 , Y10T117/10 , Y10T117/1028
摘要： There is provided a reaction vessel whereby silicon produced can be smoothly recovered dropwise without excessive thermal load on constitutional parts of the reaction vessel, a silicon deposition feedstock gas can be reacted efficiently even when the reaction vessel is scaled up to industrial large-scale equipment, generation of silicon fine powder and silane oligomers can be suppressed, and industrial silicon production can be performed over extended periods. The tubular reaction vessel comprises a longitudinally-extending wall with a space thereinside, wherein a silicon deposition feedstock gas inflow opening and a deposited silicon discharge opening are provided at an upper portion and a lower end portion respectively, and a flow resistance-increasing region is created on a wall surface of the tubular reaction vessel that is contacted with a feedstock gas. The flow resistance-increasing region is at least one of protrudent, concave and sloped regions.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式